FMMT5142 Datasheet. Il Transistor Bipolare. Curve Caratteristiche

alue Unit PD Total Device Dissipation, by R?JA 500 mW Derate above 25�C 4 mW/�C R?JA Thermal Resistance, Junction to Ambient �C/W 250 * Device mounted on FR-4 PCB 4.5� X 5�, mounting pad 0.02 in2 of 2 oz copper. � 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FMMT549 Rev. C1 1 FMMT549 � PNP Low Saturation Transistor Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Br

5.2. fmmt558.pdf Size:121K _diodes

5.3. fmmt591.pdf Size:292K _diodes

, Tstg -55 to 150 �C Thermal resistance Parameter Symbol Value Unit R JA 250 �C/W Junction to ambient(a) NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 4 - September 2007 2 www.zetex.com � Zetex Semiconductors plc 2007 FMMT591 Characteristics Issue 4 - September 2007 3 www.zetex.com � Zetex Semiconductors plc 2007 FMMT591 Electrical characteristics (at Tamb = 25�C unless otherwi

5.4. fmmt5088_fmmt5089.pdf Size:27K _diodes

5.5. fmmt560.pdf Size:480K _diodes

nt IC -150 mA Peak Pulse Current ICM -500 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation PD 500 mW Operating and Storage Temperature Range TJ, TSTG -55 to +150 �C Electrical Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO -500 ? ? V IC = -100?A Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO -500 ? ? V IC = -10mA Emitter-B

5.6. fmmt5400_fmmt5401.pdf Size:26K _diodes

5.7. fmmt5550_fmmt5551.pdf Size:27K _diodes

5.8. fmmt555.pdf Size:65K _diodes

A VCB =-140V -10 A VCB =-140V, Tamb =100�C 25�C Emitter Cut-Off Current IEBO -0.1 A VEB=-4V Collector-Emitter VCE(sat) -0.3 V IC=-100mA, IB=-10mA* Saturation Voltage Base-Emitter VBE(sat) -1 V IC=-100mA, IB=-10mA* Saturation Voltage Base-Emitter VBE(on) -1 V IC=-100mA, VCE =-10V* Turn-on Voltage Static Forward Current hFE 50 IC=-10mA, VCE =-10V* Transfer Ratio 50 300 IC=-300mA, VCE =-10V* 100V 1000V Transition Frequency fT 100 MHz IC=-50mA, VCE =-10V oltage (V) f=100MHz Output Ca

5.9. fmmt5209_fmmt5210.pdf Size:27K _diodes

5.10. fmmt591a.pdf Size:149K _diodes

A VCES=-30V Collector-Emitter saturation voltage VCE(sat) -0.2 V IC=-100mA, IB=-1mA(*) -0.35 V IC=-500mA, IB=-20mA(*) -0.5 V IC=-1A, IB=-100mA(*) Base-Emitter saturation voltage VBE(sat) -1.1 V IC=-1A, IB=-50mA(*) Base-Emitter turn-on voltage VBE(on) -1.0 V IC=-1A, VCE=-5V(*) Static forward current transfer ratio hFE 300 IC=-1mA, 300 800 IC=-100mA(*) 250 IC=-500mA(*), VCE=-5V 160 IC=-1A(*) 30 IC=-2A(*) Transition frequency fT 150 MHz IC=-50mA, VCE=-10V f=100MHz Output capac

5.11. fmmt5087.pdf Size:26K _diodes

5.12. fmmt593.pdf Size:119K _diodes

5.13. fmmt591.pdf Size:429K _htsemi

VCE=-5V, IC=-1A 80 hFE(4) 1 VCE=-5V, IC=-2A 15 V VCE(sat)1 1 IC=-500mA, IB=-50mA -0.3 Collector-emitter saturation voltage V VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 -1.2 V Base-emitter saturation voltage VBE(sat) 1 IC=-1A, IB=-100mA V Base-emitter voltage VBE1 VCE=-5V, IC=-1A -1 150 MHz Transition frequency f VCE=-10V,IC=-50mA,,f=100MHz T Collector output capacitance Cob 10 pF VCB=-10V,f=1MHz 1 Measured under pulsed conditions, Pulse width=300?s, Duty cycle?2%. 1 JinYu

5.14. fmmt593.pdf Size:442K _htsemi

er cut-off current I V =-4V, I =0 -0.1 µA EBO EB C h * V =-5V, I =-1mA 100 FE(1) CE C h * V =-5V, I =-250mA 100 FE(2) CE C DC current gain h * V =-5V, I =-0.5A 100 300 FE(3) CE C h * V =-5V, I =-1A 50 FE(4) CE C V * I =-250mA, I =-25mA -0.2 V CE(sat)1 C B Collector-emitter saturation voltage V * I =-500mA, I =-50mA -0.3 V CE(sat)2 C B Base-emitter saturation voltage V * I =-500mA, I =-50mA -1.1 V BE(sat) C B Base-emitter voltage V * V =-5V, I =-1mA -1 V BE CE C Tr

5.15. fmmt591.pdf Size:187K _lge

=-500mA 100 300 DC current gain hFE(3) 1 VCE=-5V, IC=-1A 80 hFE(4) 1 VCE=-5V, IC=-2A 15 V VCE(sat)1 1 IC=-500mA, IB=-50mA -0.3 Collector-emitter saturation voltage V VCE(sat)2 1 IC=-1A, IB=-100mA -0.6 -1.2 V Base-emitter saturation voltage VBE(sat) 1 IC=-1A, IB=-100mA V Base-emitter voltage VBE1 VCE=-5V, IC=-1A -1 150 MHz Transition frequency f VCE=-10V,IC=-50mA,,f=100MHz T Collector output capacitance Cob 10 pF VCB=-10V,f=1MHz 1 Measured under pulsed conditions, P

5.16. fmmt591.pdf Size:219K _wietron

w FMMT591 Electrical Characteristics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit (1) On Characteristics DC Current Gain hFE1 100 - - VCE= -5.0V, IC= -1.0mA hFE2 100 - 300 VCE= -5.0V, IC= -500mA - hFE3 80 - - VCE= -5.0V, IC= -1.0A hFE4 15 - - VCE= -5.0V, IC= -2.0A Collector-Emitter Saturation Voltage VCE(sat) -0.3 V IC = -500mA, IB = -50mA - - -0.6 IC = -1.0A, IB = -100mA Base-Emitter Saturation Voltage VBE(sat) - - -1.2 V IC = -1.0A, IB

5.17. fmmt593.pdf Size:267K _wietron

istics (TA=25?C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit (1) On Characteristics DC Current Gain hFE1 100 - - VCE= -5.0V, IC= -1.0mA hFE2 100 - - VCE= -5.0V, IC= -250mA - hFE3 100 - 300 VCE= -5.0V, IC= -0.5A hFE4 50 - - VCE= -5.0V, IC= -1.0A Collector-Emitter Saturation Voltage VCE(sat) -0.2 V IC = -250mA, IB = -25mA - - -0.3 IC = -0.5A, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) - - -1.1 V IC = -0.5A, IB = -50mA Base-Emitter Voltage VB

Altri tipi di transistor... FMMT5134 , FMMT5135 , FMMT5136 , FMMT5137 , FMMT5138 , FMMT5139 , FMMT5140 , FMMT5141 , BF194 , FMMT5143 , FMMT5172 , FMMT5179 , FMMT5209 , FMMT5210 , FMMT5400 , FMMT5400R , FMMT5401 .


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