2N3704 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: 2N3704

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 0.36

Tensione tra collettore e base (Ucb): 50

Tensione tra collettore ed emettitore (Uce): 30

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 0.8

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 100

Capacità di uscita (Cc), Pf: 12

Il guadagno di tensione in continua (hfe): 300

Pack: TO92

Equivalente per i 2N3704

2N3704 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. 2n3704.pdf Size:56K _fairchild_semi

arameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 30 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 50 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V ICBO Collector Cut-off Current VCB = 20V, IE = 0 100 nA IEBO Emitter Cut-off Current VEB = 3.0V, IC = 0 100 nA On Characteristics * hFE DC Current Gain VCE= 5.0V, IC = 50mA 100 300 VCE(sat) Collector-Emitter Saturation Volta

1.2. 2n3704_2n3705_2n3706.pdf Size:55K _central

5.1. 2n370.pdf Size:392K _rca

5.2. 2n3700.pdf Size:109K _st

Electrical characteristics 2 Electrical characteristics (TCASE = 25°C; unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit VCB = 90V Collector cut-off current 10 nA ICBO (IE = 0) VCB = 90V Tamb = 150°C 10 µA Emitter cut-off current IEBO VEB = 5V 10 nA (IC = 0) Collector-base breakdown V(BR)CBO IC = 100µA 140 V voltage (IE = 0) Collector-emitter breakdown IC = 30mA V(BR)CEO(1) voltage (IB = 0) 80 V Emitter-b

5.3. 2n3703.pdf Size:56K _fairchild_semi

yp. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V BV(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -50 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -3.0V, IC = 0 -100 nA On Characteristics * hFE DC Current Gain VCE= -5.0V, IC = -50mA 30 150 VCE(sat) Collector-Emitter Saturation Voltage IC = -50mA, IB =

5.4. 2n3702.pdf Size:59K _fairchild_semi

ol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BV(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -25 V BV(BR)CBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -40 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VEB = -3.0V, IC = 0 -100 nA On Characteristics * hFE DC Current Gain VCE= -5.0V, IC = -50mA 60 300 VCE(sat) Collector-Emitter S

5.5. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

5.6. 2n3700_2n3701.pdf Size:108K _central

1.1 V hFE VCE=10V, IC=0.1mA 50 30 100 hFE VCE=10V, IC=10mA 90 40 120 hFE VCE=10V, IC=150mA 100 300 40 120 hFE VCE=10V, IC=150mA , TA=-55°C 40 - hFE VCE=10V, IC=500mA 50 30 100 hFE VCE=10V, IC=1.0A 15 15 (Continue) R0  2N3700 and 2N3701 NPN SILICON TRANSISTOR 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS fT VCE=10V, IC=50mA, f=20MHz 100 400 80 400 MHz Cob VCB=10V, IE=0, f=1.0MHz 12 12 pF Cib VBE=0.5V, IC=0, f=1.0MHz 60 60 pF hfe VCE=5.0V, IC=1.0mA, f=1.

5.7. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

5.8. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

5.9. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

700UB 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for T ? +250C. C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 140 Vdc (BR) CBO IC = 100 µAdc Emitter-Base Breakdown Voltage V 7.0 Vdc (BR) EBO IE = 100 µAdc Collector-Emitter Breakdown Current V 80 Vdc (BR) CEO IC = 30 mAdc 6 Lake Street, Lawrence, MA 01841

Altri tipi di transistor... 2N3700 , 2N3700CSM , 2N3700DCSM , 2N3700UB , 2N3701 , 2N3702 , 2N3703 , 2N370-33 , BC158 , 2N3705 , 2N3706 , 2N3707 , 2N3708 , 2N3709 , 2N371 , 2N3710 , 2N3711 .