| |
KSB1097
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: KSB1097
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 30
Tensione tra collettore e base (Ucb): 80
Tensione tra collettore ed emettitore (Uce): 60
Tensione tra base ed emettitore (Ueb): 7
Massima corrente continuativa (Ic): 7
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft):
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 40
Pack: TO220
Equivalente per i KSB1097
KSB1097
PDF doc:
1.1. ksb1097.pdf  Size:47K _fairchild_semi  |
 | KSB1097
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1588
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 80 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current (DC) - 7 A
ICP *Collector Current (Pulse) - 15 A
IB Base Current - 3.5 A
PC Collector Dissipation (Ta=25°C) 2 W
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
* PW?300µs, Duty Cycle?10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 10 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
hFE1 * DC Current Gain VCE = - 1V, IC = - 3A 40 200
hFE2 VCE = - 1V, IC = - 5A 20
VCE(sat) Collector-Emitter Saturation |
4.1. ksb1098.pdf Size:46K _fairchild_semi  |
 | KSB1098
Low Frequency Power Amplifier
• Low Speed Switchng Industrial Use
• Complement to KSD1589
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 100 V
VCEO Collector-Emitter Voltage - 100 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current (DC) - 5 A
ICP *Collector Current (Pulse) - 8 A
IB Base Current - 0.5 A
PC Collector Dissipation (Ta=25°C) 2 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
* PW?300µs, Duty Cycle?10%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB = - 100V, IE = 0 - 1 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 3 mA
hFE1 * DC Current Gain VCE = - 2V, IC= - 3A 2000 15K
hFE2 VCE = - 2V, IC = - 5A 500
VCE(sat) * Colle |
5.1. ksb1017.pdf Size:51K _fairchild_semi  |
 | KSB1017
Power Amplifier Applications
• Complement to KSD1408
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 80 V
VCEO Collector-Emitter Voltage - 80 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 4 A
IB Base Current - 0.4 A
PC Collector Dissipation ( TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 -80 V
ICBO Collector Cut-off Current VCB = - 80V, IE = 0 - 30 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 100 µA
hFE1 DC Current Gain VCE = - 5V, IC = - 0.5A 40 240
hFE2 VCE = - 5V, IC = - 3A 15
VCE(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.3A - 1 - 1.7 V
VBE(on) Base-Emitter ON Voltag |
5.2. ksb1023.pdf Size:46K _fairchild_semi  |
 | KSB1023
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Complement to KSD1413
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 60 V
VCEO Collector-Emitter Voltage - 40 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 3 A
ICP Collector Current (Pulse) - 6 A
IB Base Current - 0.3 A
PC Collector Dissipation (Ta=25°C) 2 W
PC Collector Dissipation (TC=25°C) 20 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = - 25mA, IB = 0 - 40 V
ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 20 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 2.5 mA
hFE1 DC Current Gain VCE = - 2V, IC = - 1A 20 |
5.3. ksb1015.pdf Size:50K _fairchild_semi  |
 | KSB1015
Low Frequency Power Amplifier
• Low Collector Emitter Saturation Voltage
• Complement to KSD1406
TO-220F
1
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 60 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current(DC) - 3 A
IB Base Current - 0.5 A
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 100 µA
IEBO Emitter Cut-off Current VEB = - 7V, IC = 0 - 100 µA
hFE1 DC Current Gain VCE = - 5V, IC = - 0.5A 60 200
hFE2 VCE = - 5V, IC = - 3A 20
VCE(sat) Collector-Emitter Saturation Voltage IC = - 3A, IB = |
Altri tipi di transistor... KSB1015-O
, KSB1015-Y
, KSB1017
, KSB1017-O
, KSB1017-R
, KSB1017-Y
, KSB1022
, KSB1023
, BC327
, KSB1097-O
, KSB1097-R
, KSB1097-Y
, KSB1098
, KSB1098-O
, KSB1098-R
, KSB1098-Y
, KSB1116
.
|
