KSB1098-Y . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: KSB1098-Y

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 20

Tensione tra collettore e base (Ucb): 100

Tensione tra collettore ed emettitore (Uce): 100

Tensione tra base ed emettitore (Ueb): 7

Massima corrente continuativa (Ic): 5

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft):

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 10000

Pack: TO220

Equivalente per i KSB1098-Y

KSB1098-Y - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

3.1. ksb1098.pdf Size:46K _fairchild_semi

ctor-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 1.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 3A, IB = - 3mA - 2 V tON Turn ON Time VCC = - 50V, IC = - 3A 0.5 µs IB1 = - IB2 = - 3mA tSTG Storage Time 1 µs RL = 17? tF Fall Time 1 µs * Pulse Test: PW?350µs, Duty Cycle?2% Pulsed hFE Classification Classification R O Y hFE1 2000 ~ 5000 3000 ~ 7000 5000 ~ 15000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1098 Typical Characteristics -5

4.1. ksb1097.pdf Size:47K _fairchild_semi

Voltage IC = - 5A, IB = - 0.5A - 0.5 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 5A, IB = - 0.5A - 1.5 V * Pulse Test: PW?350µs, Duty Cycle?2% Pulsed hFE Classification Classification R O Y hFE1 40 ~ 80 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1097 Typical Characteristics -1.0 1000 IB = -20mA VCE = -1V -0.9 IB = -18mA -0.8 IB = -16mA -0.7 IB = -14mA 100 IB = -12mA -0.6 IB = -10mA -0.5 IB = -8mA -0.4 10 IB = -6mA -0.

5.1. ksb1017.pdf Size:51K _fairchild_semi

e VCE = - 5V, IC = - 3A - 1 - 1.5 V fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.5A 9 MHz Cob Output Capacitance VCB = - 10V, f = 1MHz 130 pF hFE Classification Classification R O Y hFE1 40 ~ 80 70 ~ 140 120 ~ 240 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1017 Typical Characteristics -4.0 1000 IB = -140mA IB = -120mA IB = -180mA IB = -100mA VCE = -5V IB = -160mA IB = -80mA -3.2 IB = -60mA 100 -2.4 IB = -40mA IB = -20mA -1.6 10 -0.8

5.2. ksb1023.pdf Size:46K _fairchild_semi

00 hFE2 VCE = - 2V, IC = - 3A 1000 VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = - 2A, IB = - 4mA - 2 V tON Turn ON Time VCC = - 30V, IC = - 3A 0.3 µs IB1 = - IB2 = - 6mA tSTG Storage Time 0.6 µs RL = 10? tF Fall Time 0.25 µs ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1023 Typical Characteristics -5 10k VCE = -2V -4 -3 1k -2 IB = -200uA -1 IB = -175uA IB = 0 100 -0 -0.1

5.3. ksb1015.pdf Size:50K _fairchild_semi

- 0.3A - 0.5 - 1 V VBE(on) Base-Emitter ON Voltage VCE = - 5V, IC = - 0.5A - 0.7 - 1 V fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.5A 9 MHz Cob Output Capacitance VCB = - 10V, f = 1MHz 150 pF tON Turn ON Time VCC = - 30V, IC = - 1A 0.4 µs IB1 = -IB2 = -0.2A tSTG Storage Time 1.7 µs RL = 30? tF Fall Time 0.5 µs hFE Classification Classification O Y hFE1 60 ~ 120 100 ~ 200 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1015 Typical Characteristics -

Altri tipi di transistor... KSB1023 , KSB1097 , KSB1097-O , KSB1097-R , KSB1097-Y , KSB1098 , KSB1098-O , KSB1098-R , BC546 , KSB1116 , KSB1116A , KSB1116A-G , KSB1116A-L , KSB1116A-Y , KSB1116-G , KSB1116-L , KSB1116-Y .