KSB1116 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: KSB1116

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.75

Tensione tra collettore e base (Ucb): 60

Tensione tra collettore ed emettitore (Uce): 50

Tensione tra base ed emettitore (Ueb): 6

Massima corrente continuativa (Ic): 1

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 70

Capacità di uscita (Cc), Pf: 2.5

Il guadagno di tensione in continua (hfe): 135

Pack: TO92

Equivalente per i KSB1116

KSB1116 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. ksb1116s.pdf Size:52K _fairchild_semi

-0.3 V VBE (sat) * Base-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.9 -1.2 V Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 25 pF fT Current Gain Bandwidth Product VCE= -2V, IC= -100mA 70 120 MHz tON Turn On Time VCC= -10V, IC= -100mA 0.07 µs IB1= -IB2= -10mA tSTG Storage Time 0.7 µs VBE (off)= 2~3V tF Fall Time 0.07 µs * Pulse Test: PW ?350µs, Duty Cycle?2% hFE Classification Classification Y G L hFE1 135 ~ 270 200 ~ 400 300 ~ 600 ©2003 Fairchild Semiconductor Corporation Rev

1.2. ksb1116_a.pdf Size:52K _fairchild_semi

r On Voltage VCE= -2V, IC= -50mA -600 -650 -700 mV VCE (sat) * Collector-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.2 -0.3 V VBE (sat) * Base-Emitter Saturation Voltage IC= -1A, IB= -50mA -0.9 -1.2 V Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 25 pF fT Current Gain Bandwidth Product VCE= -2V, IC= -100mA 70 120 MHz tON Turn On Time VCC= -10V, IC= -100mA 0.07 µs IB1= -IB2= -10mA tSTG Storage Time 0.7 µs VBE (off)= 2~3V tF Fall Time 0.07 µs * Pulse Test: PW ?350µs, Duty Cycle?2%

5.1. ksb1121.pdf Size:430K _fairchild_semi

10µA, IC = 0 -6 V ICBO Collector Cut-off Current VCB = -20V, IE = 0 -100 nA IEBO Emitter Cut-off Current VBE = -4V, IC = 0 -100 nA hFE1 DC Current Gain VCE = -2V, IC = -0.1A 100 560 hFE2 VCE = -2V, IC = -1.5A 65 VCE (sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.35 -0.6 V VBE (sat) Base-Emitter Saturation Voltage IC = -1.5A, IB = -75mA -0.85 -1.2 V ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSB1121 Rev. B1 KSB1121 PNP Epitaxial Planar Silicon

5.2. ksb1151.pdf Size:50K _fairchild_semi

hFE2 VCE = - 1V, IC = - 2A 100 200 400 hFE3 VCE = - 2V, IC = - 5A 50 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.14 - 0.3 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.9 - 1.2 V tON Turn On Time VCC = - 10V, IC = - 2A 0.15 1 µs IB1 = - IB2 =0.2A tSTG Storage Time 0.78 2.5 µs RL = 5? tF Fall Time 0.18 1 µs * Pulse test: PW?350µs, Duty Cycle?2% Pulsed hFE Classification Classification O Y G hFE2 100 ~ 200 160 ~ 320 200 ~

5.3. ksb1149.pdf Size:46K _fairchild_semi

1000 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 0.9 - 1.2 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 1.5mA - 1.5 - 2 V tON Turn ON Time VCC = - 40V, IC = - 1.5A 0.5 µs IB1 = - IB2 = - 1.5mA tSTG Storage Time 2 µs RL = 27? tF Fall Time 1 µs * Pulse test: PW?350µs, duty Cycle?2% Pulsed hFE Classification Classification O Y G hFE1 2000 ~ 5000 4000 ~ 12000 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, Februa

Altri tipi di transistor... KSB1097 , KSB1097-O , KSB1097-R , KSB1097-Y , KSB1098 , KSB1098-O , KSB1098-R , KSB1098-Y , 2SC2073 , KSB1116A , KSB1116A-G , KSB1116A-L , KSB1116A-Y , KSB1116-G , KSB1116-L , KSB1116-Y , KSB1121 .