MJ11015 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: MJ11015

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 200

Tensione tra collettore e base (Ucb): 120

Tensione tra collettore ed emettitore (Uce): 120

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 30

Temperatura di giunzione (Tj), °C: 200

Frequenza di transizione (ft):

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 2000

Pack: TO3

Equivalente per i MJ11015

MJ11015 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. mj11015.pdf Size:53K _inchange_semiconductor

isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11015 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -120 V Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.5 V VBE(sat)-1 Ba

4.1. mj11017-18_21-22.pdf Size:235K _motorola

IIIIIIIIIIIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII III IIII III IIII III IIII 200 WATTS MJ11017 MJ11021 Rating Symbol Unit IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIIIIII III IIII III IIII III IIII III IIII Collector–Emitter Voltage VCEO 150 250 Vdc IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIIIIII IIIIIIIIIIIII IIIIIII III IIII III IIII III IIII III IIII Collector–Base

4.2. mj11012r.pdf Size:157K _motorola

II IIII IIII III IIII III IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIIIIIIIII III III III IIII III III IIII III COMPLEMENTARY Collector–Base Voltage VCB 60 90 120 Vdc IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIIIIIIIII IIIIIIIIIII IIIIIIIIII III III III III III IIII III III IIII III SILICON Emitter–Base Voltage VEB 5 Vdc IIIIIIIIIII IIII IIII IIIIIIIIIII IIIIIIIIII IIIIIIIIIII IIIIIIIIII IIIIIIIIIII IIIIIIIIII III III III III III III III I

4.3. mj11017r.pdf Size:235K _motorola

IIIIIIIIIIIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII III IIII III IIII III IIII 200 WATTS MJ11017 MJ11021 Rating Symbol Unit IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIIIIII III IIII III IIII III IIII III IIII Collector–Emitter Voltage VCEO 150 250 Vdc IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIII IIII IIIIIIIIIIIII IIIIIII IIIIIIIIIIIII IIIIIII III IIII III IIII III IIII III IIII Collector–Base

4.4. mj11011-16.pdf Size:140K _mospec

4.5. mj11019.pdf Size:78K _inchange_semiconductor

se 0.86 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11019 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 -200 V Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A -2.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.4 V VCE(sat)-2

4.6. mj11012.pdf Size:51K _inchange_semiconductor

NCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11012 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 60 V Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(s

4.7. mj11014.pdf Size:51K _inchange_semiconductor

NCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11014 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 90 V Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(s

4.8. mj11011.pdf Size:53K _inchange_semiconductor

mi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11011 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -60 V Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= -20A; IB=

4.9. mj11017.pdf Size:54K _inchange_semiconductor

e 0.86 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11017 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 -150 V Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A -2.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.4 V VCE(sat)-2

4.10. mj11018.pdf Size:52K _inchange_semiconductor

mi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11018 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 150 V Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 2.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.4 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= 15A; IB= 0.15

4.11. mj11013.pdf Size:53K _inchange_semiconductor

mi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ11013 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -90 V Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= -20A; IB=

4.12. mj11016.pdf Size:51K _inchange_semiconductor

ct Specification isc Silicon NPN Darlington Power Transistor MJ11016 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V Collector-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 0.3A 4.0 V V CE(sat)-2 Base-Emitter Saturation Voltage IC= 20A; IB= 0.2A 3.5 V VBE(sat)-1 Base-Emitter Saturatio

Altri tipi di transistor... MJ10200 , MJ10201 , MJ10202 , MJ105 , MJ11011 , MJ11012 , MJ11013 , MJ11014 , BC109C , MJ11016 , MJ11017 , MJ11018 , MJ11019 , MJ11020 , MJ11021 , MJ11022 , MJ11028 .