MJ13330 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: MJ13330

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 175

Tensione tra collettore e base (Ucb): 400

Tensione tra collettore ed emettitore (Uce): 200

Tensione tra base ed emettitore (Ueb): 6

Massima corrente continuativa (Ic): 20

Temperatura di giunzione (Tj), °C: 200

Frequenza di transizione (ft): 5

Capacità di uscita (Cc), Pf: 400

Il guadagno di tensione in continua (hfe): 15

Pack: TO3

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MJ13330 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. mj13330.pdf Size:175K _inchange_semiconductor

PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13330 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 200 V IC= 10A; IB= 1.5A 1.5 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB= 1.8A,TC=100? 2.5 Collecto

4.1. mj13333r.pdf Size:278K _motorola

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4.2. mj13334.pdf Size:262K _inchange_semiconductor

mal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13334 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 450 V IC= 10A; IB=2A 1.8 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB=2A,TC=100? 2.4 Collector-Emitter Satur

4.3. mj13332.pdf Size:175K _inchange_semiconductor

PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13332 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 350 V IC= 10A; IB= 1.5A 1.5 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB= 1.8A,TC=100? 2.5 Collecto

4.4. mj13335.pdf Size:262K _inchange_semiconductor

mal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13335 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 500 V IC= 10A; IB=2A 1.8 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB=2A,TC=100? 2.4 Collector-Emitter Satur

4.5. mj13331.pdf Size:175K _inchange_semiconductor

PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13331 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 250 V IC= 10A; IB= 1.5A 1.5 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB= 1.8A,TC=100? 2.5 Collecto

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mal Resistance,Junction to Case 1.0 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ13333 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 400 V IC= 10A; IB=2A 1.8 Collector-Emitter Saturation Voltage V VCE(sat)-1 IC= 10A; IB=2A,TC=100? 2.4 Collector-Emitter Satur

Altri tipi di transistor... MJ13070 , MJ13071 , MJ13080 , MJ13081 , MJ13090 , MJ13091 , MJ13100 , MJ13101 , 100DA025D , MJ13331 , MJ13332 , MJ13333 , MJ13334 , MJ13335 , MJ14000 , MJ14001 , MJ14002 .