MPS6518 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: MPS6518

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.31

Tensione tra collettore e base (Ucb): 40

Tensione tra collettore ed emettitore (Uce): 40

Tensione tra base ed emettitore (Ueb): 4

Massima corrente continuativa (Ic): 0.2

Temperatura di giunzione (Tj), °C: 135

Frequenza di transizione (ft): 150

Capacità di uscita (Cc), Pf: 4

Il guadagno di tensione in continua (hfe): 150

Pack: TO92

Equivalente per i MPS6518

MPS6518 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. mps6518.pdf Size:292K _fairchild_semi

ion 625 mW D Derate above 25°C 5.0 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R Thermal Resistance, Junction to Ambient 200 °C/W ?JA © 1997 Fairchild Semiconductor Corporation MPS6518 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 0.5 mA, IB = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1

4.1. mmbt6515_mps6515.pdf Size:103K _fairchild_semi

Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 0.5mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC =10µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 4.0 V ICBO Collector Cutoff Current VCE = 30V, IE = 0 50 nA ICBO Collector Cutoff Current VCB = 30V, IE = 0, T = 60°C1.0 µA On Characteristics * hFE DC Current Gain IC = 2.0mA, VCE = 10V 250 500 IC = 100mA, VCE = 10V 150 VCE(sat) Collecto

4.2. mps6514.pdf Size:47K _fairchild_semi

CEO Collector-Emitter Breakdown Voltage IC = 0.5mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC =10µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 4.0 V ICBO Collector Cutoff Current VCE = 30V, IE = 0 50 nA ICBO Collector Cutoff Current VCB = 30V, IE = 0, T = 100°C1.0 µA On Characteristics * hFE DC Current Gain IC = 2.0mA, VCE = 10V 150 300 IC = 100mA, VCE = 10V 90 VCE(sat) Collector-Emitter Saturation Voltage IC = 50mA, IB = 5.0mA 0.5 V Small Sign

4.3. mps6513.pdf Size:126K _fairchild_semi

Total Device Dissipation 625 mW Derate above 25°C 5.0 mW/°C R?JC Thermal Resistance, Junction to Case 83.3 °C/W R?JA Thermal Resistance, Junction to Ambient 200 °C/W *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Voltage IC = 10 ?A 40 V BVCEO Collector-Emitter Voltage IC = 0.5 mA 30 V BVEBO Emitter-Base Voltage IE = 10 ?A 4 V VCB = 30 V, T = 25 °C 0.05

4.4. mps651.pdf Size:57K _fairchild_semi

mV IC=2.0A, IB=200mA 500 VBE (sat) Base-Emitter Saturation Voltage IC=1.0A, IB=100mA 1.2 V VBE (on) Base-Emitter On Voltage VCE=2.0V, IC=1.0A 1.0 V fT Current Gain Band Width Product VCE=5.0V, IC=50mA, 75 MHz f=100MHz ©2002 Fairchild Semiconductor Corporation Rev. A, July 2002 MPS651 Package Dimensions TO-92 +0.25 4.58 –0.15 0.46 ±0.10 +0.10 1.27TYP 1.27TYP 0.38 –0.05 [1.27 ±0.20] [1.27 ±0.20] 3.60 ±0.20 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Cor

4.5. mps650-mps651-mps750-mps751-cenw650-cenw651-cenw750-cenw751.pdf Size:57K _central

4.6. mps651x_series.pdf Size:111K _central

MAX MIN MAX MIN MAX MIN MAX UNITS ICBO VCB=30V 50 50 50 - nA ICBO VCB=20V - - - 50 nA BVCEO IC=0.5mA 30 25 40 25 V BVEBO IE=10µA 4.0 4.0 4.0 4.0 V VCE(SAT) IC=50mA, IB=5.0mA 0.5 0.5 0.5 0.5 V Cob VCB=10V, IE=0, f=100kHz 3.5 3.5 4.0 4.0 pF MPS6512 MPS6513 MPS6514 MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX hFE VCE=10V, IC=2.0mA 50 100 90 180 150 300 250 500 hFE VCE=10V, IC=100mA 30 60 90 150 (Continued) R0 MPS6512 SER

4.7. mps650_mps651_mps750_mps751.pdf Size:68K _onsemi

C/W Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS xxx AYWW G G xxx = 650, 750, 651, or 751 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See d

4.8. mps651.pdf Size:217K _secos

Collector-Emitter Breakdown Voltage V(BR)CEO* 60 - - V IC=10 mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10µA, IC = 0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=80 V, IE = 0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4 V, IC = 0 HFE(1) * 75 - - VCE=2V, IC=50mA HFE(2) * 75 - - VCE=2V, IC=500mA DC Current Gain HFE(3) * 75 - - VCE=2V, IC=1A HFE(4) * 40 - - VCE=2V, IC=2A - - 0.5 V IC=2A, IB=200mA Collector-Emitter Saturation Voltage VCE(sat) * - - 0.

4.9. mps651.pdf Size:350K _kec

IEBO VEB=4V, IC=0 Emitter Cut-off Current - - 100 nA hFE(1) VCE=2V, IC=50mA 100 - 320 DC Current Gain hFE(2) VCE=2V, IC=1A 30 - - V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 60 - - V VCE(sat) IC=500mA, IB=50mA Collector-Emitter Saturation Voltage - 0.15 0.5 V VBE(sat) IC=500mA, IB=50mA Base-Emitter Saturation Voltage - 0.85 1.2 V fT VCE=10V, IC=50mA Transition Frequency - 150 - MHz Cob VCB=10V, IE=0, f=1MHz Collector Output Capacitanc - 12 - pF Note : hFE(1) Clas

4.10. mps6512_mps6515.pdf Size:179K _microelectronics

Altri tipi di transistor... MPS651 , MPS6511 , MPS6512 , MPS6513 , MPS6514 , MPS6515 , MPS6516 , MPS6517 , 2N3773 , MPS6519 , MPS6520 , MPS6521 , MPS6522 , MPS6523 , MPS6530 , MPS6531 , MPS6532 .