MPSA05 Datasheet. Il Transistor Bipolare. Curve Caratteristiche

(TA = 25�C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector�Emitter Breakdown Voltage(2) V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) MPSA05, MPSA55 60 � MPSA06, MPSA56 80 � Emitter�Base Breakdown Voltage V(BR)EBO 4.0 � Vdc (IE = 100 �Adc, IC = 0) Collector Cutoff Current ICES � 0.1 �Adc (VCE = 60 Vdc, IB = 0) Collector Cutoff Current ICBO �Adc (VCB = 60 Vdc, IE = 0) MPSA05, MPSA55 � 0.1 (VCB = 80 Vdc, IE = 0) MPSA06, MPSA56 � 0.1 1. RqJA is measured

1.2. mpsa05_mpsa55_mpsa06_mpsa56.pdf Size:239K _motorola

1.3. mpsa05_mmbta05.pdf Size:50K _fairchild_semi

VCE = 1.0V 100 IC = 100mA, VCE = 1.0V 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 10mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 100mA, VCE = 1.0V 1.2 V Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 2V, 100 MHz f = 100MHz * Pulse Test: Pulse Width ? 300�s, Duty Cycle ? 2.0% Thermal Characteristics TA=25�C unless otherwise noted Max. Symbol Parameter Units MPSA05 *MMBTA05 PD Total Device Dissipation 625 350 mW Derate above 25

1.4. mpsa05_to-92.pdf Size:241K _mcc

JA Thermal Resistance, Junction to Ambient 200 C/W C O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 60 --- Vdc (IC=1.0mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage 4.0 --- Vdc D (I =100i Adc, I =0) E C ICEO Collector Cutoff Current --- 0.1 uAdc (V =60Vdc, I =0) CE B ICBO Emitter Cutoff Current --- 0.1 uAdc (VCB=60Vdc, IE=0) ON CHARACTERISTICS E B C h

1.5. mpsa05_mpsa06_mpsa55_mpsa56.pdf Size:89K _onsemi

C/W (Note 1) Thermal Resistance, Junction-to-Case RqJC 83.3 �C/W MPS Stresses exceeding Maximum Ratings may damage the device. Maximum Axx Ratings are stress ratings only. Functional operation above the Recommended AYWW G Operating Conditions is not implied. Extended exposure to stresses above the G Recommended Operating Conditions may affect device reliability. 1. RqJA is measured with the device soldered into a typical printed circuit board. xx = 05, 06, 55, or 56 A = Assembly Loc

1.6. mpsa05.pdf Size:61K _secos

arameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V 60 - - V I =1mA, I =0 (BR)CEO C B Emitter to Base Breakdown Voltage V 4 - - V I =100µA, I =0 (BR)EBO E C Collector Cut-Off Current I - - 0.1 µA V =60 V, I =0 CBO CB E Collector Cut-Off Current I - - 0.1 µA V =60V, I =0 CEO CE B Emitter Cut-Off Current I - - 1 µA V =3V, I =0 EBO EB C h 100 - - V =1V, I =100mA FE

1.7. mpsa05.pdf Size:26K _kec

BR)CEO IC=5mA, IB=0 Collector-Emitter Breakdown Voltage 60 - - V hFE(1) VCE=1V, IC=10mA 100 - - DC Current Gain hFE(2) VCE=1V, IC=100mA 100 - - VCE(sat) IC=100mA, IB=10mA Collector-Emitter Saturation Voltage - - 0.25 V VBE VCE=1V, IC=100mA Base-Emitter Voltage - - 1.2 V fT VCE=1V, IC=10mA Transition Frequency 80 - - MHz Cob VCB=10V, IE=0, f=1MHz Collector Output Capacitance - 10 - pF 1998. 1. 9 Revision No : 2 1/1 A J C L M

1.8. mpsa05-06.pdf Size:167K _wietron

EBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw MPSA05 MPSA06 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Max Characteristics Symbol Min TYP Unit ON CHARACTERISTICS DC Current Gain hFE(1) 100 - - - (IC= 100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage - VCE(sat) - 0.25 Vdc (IC= 100 mAdc, IB= 10 mAdc) Base-Emitter Saturation Voltage - 1.2 VBE(sat) - Vdc (IC= 100 mAdc, IB= 10 mAdc)

Altri tipi di transistor... MPS911 , MPS918 , MPS918R , MPS929 , MPS929A , MPS930 , MPS930A , MPS930R , 2SC2073 , MPSA06 , MPSA09 , MPSA10 , MPSA12 , MPSA13 , MPSA14 , MPSA16 , MPSA17 .


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