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MPSA63
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: MPSA63
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.33
Tensione tra collettore e base (Ucb): 30
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 10
Massima corrente continuativa (Ic): 0.5
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 125
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 20
Pack: TO92
Equivalente per i MPSA63
MPSA63
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1.1. mpsa62_mpsa63_mpsa64.pdf  Size:157K _motorola  |
 | stic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V(BR)CES Vdc
(IC = –100 µAdc, VBE = 0) MPSA62 –20 —
MPSA63, MPSA64 –30 —
Collector Cutoff Current ICBO nAdc
(VCB= –15 Vdc, IE = 0) MPSA62 — –100
(VCB = –30 Vdc, IE = 0) MPSA63, MPSA64 — –100
Emitter Cutoff Current IEBO — –100 nAdc
(VEB = –10 Vdc, IC = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data |
1.2. mpsa63_mpsa64_to-92.pdf Size:208K _mcc  |
 | TA=25 1.5 Watts
C
12 mW/
Derate above 25
R JC Thermal Resistance, Junction to Case 83.3 /W
R JA Thermal Resistance, Junction to Ambient 200 /W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
D
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage -30 --- Vdc
(IC=-100µAdc,VBE=0)
ICBO Collector Cutoff Current --- -100 nAdc
(VCB=-30c, IE=0)
C B E
IEBO Emitter Cutoff Current --- -100 nAdc
(VEB=-0Vdc, IC=0)
* Pul |
5.1. mpsa64_4.pdf Size:49K _philips  |
 | se current (DC) --100 mA
Ptot total power dissipation Tamb ? 25 °C; note 1 - 500 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 27 2
Philips Semiconductors Product specification
PNP Darlington transistor MPSA64
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 250 K/W
Not |
5.2. mpsa65.pdf Size:29K _fairchild_semi  |
 | wise noted
Symbol Characteristic Max Units
MPSA65 *MMBTA65 **PZTA65
PD Total Device Dissipation 625 350 1,000 mW
5.0 2.8 8.0
Derate above 25°C mW/°C
Thermal Resistance, Junction to Case 83.3
R?JC °C/W
Thermal Resistance, Junction to Ambient 200 357 125
R °C/W
?JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation A65, Rev A
MPSA65 / MMBTA65 / |
5.3. mpsa64_mmbta64_pzta64.pdf Size:127K _fairchild_semi  |
 | ess otherwise noted
Symbol Characteristic Max Units
MPSA64 *MMBTA64 **PZTA64
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25 C 5.0 2.8 8.0 mW/ C
° °
R?JC Thermal Resistance, Junction to Case 83.3 C/W
°
R?JA Thermal Resistance, Junction to Ambient 200 357 125 C/W
°
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
MPSA64 / MMBTA64 |
5.4. mpsa62_63_64.pdf Size:495K _kec  |
 | f
ICBO
- - -0.1
?
A
Current
VCB=-30V, IE=0
MPSA63/64
IEBO VEB=-10V, IC=0
Emitter Cut-off Current - - -0.1
?
A
MPSA62 20,000 - -
IC=-10mA, VCE=-5V
MPSA63 5,000 - -
hFE
DC Current Gain MPSA64 10,000 - -
MPSA63 10,000 - -
IC=-100mA, VCE=-5V
MPSA64 20,000 - -
IC=-10mA, IB=-0.01mA
MPSA62 - - -1.0
Collector-Emitter
VCE(sat)
V
Saturation Voltage
IC=-100mA, IB=-0.1mA
MPSA63/64 - - -1.5
IC=-10mA, VCE=-5V
MPSA62 - - -1.4
VBE
Base Emitter Voltage V
IC=-100mA, VCE=-5V
MP |
Altri tipi di transistor... MPSA29
, MPSA42
, MPSA43
, MPSA44
, MPSA45
, MPSA55
, MPSA56
, MPSA62
, TIP122
, MPSA64
, MPSA65
, MPSA66
, MPSA70
, MPSA75
, MPSA76
, MPSA77
, MPSA92
.
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