P309 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: P309

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 0.25

Tensione tra collettore e base (Ucb): 120

Tensione tra collettore ed emettitore (Uce): 0

Tensione tra base ed emettitore (Ueb): 3

Massima corrente continuativa (Ic): 0.12

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 20

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 20

Pack:

Equivalente per i P309

P309 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. bup309.pdf Size:113K _siemens

- E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC ? 0.4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE(th) V VGE = VCE, IC = 1 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 15 A, Tj = 25 °C - 3.5 4.2 VGE = 15 V, IC = 15 A, Tj = 125 °C - - - VGE = 15 V, IC = 15 A, Tj = 1

1.2. dmp3098lsd.pdf Size:159K _diodes

annel MOSFET Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Steady TA = 25°C -4.4 ID A State -3.3 TA = 70°C Pulsed Drain Current (Note 3) IDM -15 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 1.8 W Thermal Resistance, Junction to Ambient (Note 1) 70 °C/W R?JA Operating and Storage

1.3. dmp3098lss.pdf Size:200K _diodes

erwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) Steady TA = 25°C -5.3 ID A State -4.7 TA = 70°C Pulsed Drain Current (Note 3) IDM -20 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 2.5 W Thermal Resistance, Junction to Ambient (Note 1) 50 °C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted o

1.4. dmp3098l.pdf Size:100K _diodes

Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Steady TA = 25°C -3.8 Drain Current (Note 1) VGS = -10V ID A State -2.9 TA = 70°C Pulsed Drain Current (Note 3) IDM -11 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 1.08 W 115 °C/W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2

1.5. dmp3098ldm.pdf Size:229K _diodes

acteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 1.25 W Thermal Resistance, Junction to Ambient (Note 1); Steady-State 100 °C/W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on 1"x1", FR-4 PC board on 0.1in.2 pads on 2 oz. Copper pads and test pulse width t ?10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be f

1.6. p307-v_p308_p309.pdf Size:747K _russia

Altri tipi di transistor... P306 , P306A , P307 , P307A , P307B , P307G , P307V , P308 , 2N3904 , P401 , P402 , P403 , P403A , P416 , P416A , P416B , P417 .