PN3640 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: PN3640

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.625

Tensione tra collettore e base (Ucb): 12

Tensione tra collettore ed emettitore (Uce): 12

Tensione tra base ed emettitore (Ueb): 4

Massima corrente continuativa (Ic): 0.5

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 500

Capacità di uscita (Cc), Pf: 3.5

Il guadagno di tensione in continua (hfe): 30

Pack: TO92

Equivalente per i PN3640

PN3640 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

1.1. pn3640_mmbt3640.pdf Size:688K _fairchild_semi

5.1. pn3642.pdf Size:27K _fairchild_semi

wn Voltage * IC = 10mA, IB = 0 45 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICES Collector Cut-off Current VCB = 50V, IE = 0 50 nA VCB = 50V, IE = 0, TA = 65°C 1.0 µA On Characteristics hFE DC Current Gain VCE = 10V, IC = 150mA 40 120 VCE = 10V, IC = 500mA 15 VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.22 V Small Signal Characteristics Cob Output Capacitance VCB = 10V, f =

5.2. pn3645.pdf Size:295K _fairchild_semi

c Max Units PN3645 PD Total Device Dissipation 625 mW ° ° Derate above 25 C 5.0 mW/ C R Thermal Resistance, Junction to Case 83.3 ° C/W ?JC R Thermal Resistance, Junction to Ambient 200 °C/W ?JA © 1997 Fairchild Semiconductor Corporation PN3645 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 60 V Voltag

5.3. pn3643.pdf Size:27K _fairchild_semi

wn Voltage * IC = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICES Collector Cut-off Current VCB = 50V, IE = 0 50 nA VCB = 50V, IE = 0, TA = 65°C 1.0 µA On Characteristics hFE DC Current Gain VCE = 10V, IC = 150mA 100 300 VCE = 10V, IC = 500mA 20 VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.22 V Small Signal Characteristics Cob Output Capacitance VCB = 10V, f

5.4. pn3646.pdf Size:28K _fairchild_semi

= 0 40 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 40 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 5.0 V ICES Collector Cutoff Current VCE = 20V, VBE = 0 0.5 µA VCE = 20V, VBE = 0, Ta = 65°C 3.0 µA On Characteristics * hFE DC Current Gain VCE = 0.4V, IC = 30mA 30 120 VCE = 0.5V, IC = 100mA 25 VCE = 1.0V, IC = 300mA 15 VCE(sat) Collector-Emitter Saturation Voltage IC = 30mA, IB = 3.0mA 0.2 V IC = 100mA, IB = 10mA 0.28 V IC = 300mA, IB = 3.0mA 0.5 V

5.5. pn3644.pdf Size:295K _fairchild_semi

c Max Units PN3644 PD Total Device Dissipation 625 mW ° ° Derate above 25 C 5.0 mW/ C R Thermal Resistance, Junction to Case 83.3 ° C/W ?JC R Thermal Resistance, Junction to Ambient 200 °C/W ?JA © 1997 Fairchild Semiconductor Corporation PN3644 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 45 V Voltag

5.6. 2n3641_2n3642_2n3643_pn3641_pn3642_pn3643.pdf Size:67K _central

5.7. 2n3646_2n5772_pn3646.pdf Size:73K _central

Altri tipi di transistor... PN3565 , PN3566 , PN3567 , PN3568 , PN3569 , PN3638 , PN3638A , PN3639 , 2N3906 , PN3641 , PN3642 , PN3643 , PN3644 , PN3645 , PN3646 , PN3691 , PN3692 .