SD2904AF
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: SD2904AF
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.6
Tensione tra collettore e base (Ucb): 60
Tensione tra collettore ed emettitore (Uce): 60
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 0.6
Temperatura di giunzione (Tj), °C: 200
Frequenza di transizione (ft): 200
Capacità di uscita (Cc), Pf: 8
Il guadagno di tensione in continua (hfe): 40
Pack: PLCC20
Equivalente per i SD2904AF
SD2904AF
PDF doc:
4.1. sd2904.pdf  Size:578K _st  |
 | SD2904
®
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
COMMON SOURCE CONFIGURATION
2 - 500 MHz
30 WATTS
28 VOLTS
9.5 dB MIN. AT 400 MHz
CLASS A OR AB OPERATION
EXCELLENT THERMAL STABILITY
M113
DESCRIPTION
epoxy sealed
The SD2904 is a gold metallized N-Channel MOS
ORDER CODE BRANDING
field-effect RF power transistor. It is intended for
SD2904 SD2904
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T = 25 oC)
case
Symbol Parameter Value Unit
V Drain Source Voltage 65 V
(BR)DSS
VDGR 65 V
Drain-Gate Voltage (RGS=1M?)
V Gate-Source Voltage ±20 V
GS
ID Drain Current 5 A
P Power Dissipation 100 W
DISS
o
Tj Max. Operating Junction Temperature 200 C
o
T Storage Temperature -65 to 150 C
STG
THERMAL DATA
o
Rth(j-c) Junction-Case Thermal Resistance 1.75 C/W
o
Rth(c-s) 0.30 C/W
Case-Heatsink Thermal Resistance ?
* Determined using a flat |
5.1. sd2903.pdf Size:1627K _st  |
 | SD2903
®
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
2 - 500 MHz
30 WATTS
28 VOLTS
13 dB MIN. AT 400 MHz
CLASS A OR AB OPERATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL M229
(epoxy sealed)
DESCRIPTION
ORDER CODE BRANDING
The SD2903 is a gold metallized N-Channel MOS
SD2903 SD2903
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
1. Drain 4.Gate
2. Drain 5.Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (T = 25 oC)
case
Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VDGR Drain-Gate Voltage (RGS = 1 M?) 65 V
VGS Gate-Source Voltage ±20 V
ID Drain Current 5 A
PDISS Power Dissipation 100 W
o
T Max. Operating Junction Temperature 200 C
j
o
T Storage Temperature -65 to 150 C
STG
THERMAL DATA
o
Rth(j-c) Junction-Case Thermal Resistance 1.75 C/W
o
Rth(c-s) 0.40 C/W
Case-Heatsink Thermal Resistance ?
* Deter |
5.2. sd2900.pdf Size:1548K _st  |
 | SD2900
®
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
COMMON SOURCE CONFIGURATION
2 - 500 MHz
5 WATTS
28 VOLTS
13.5 dB MIN. AT 400 MHz
CLASS A OR AB OPERATION
EXCELLENT THERMAL STABILITY
M113
DESCRIPTION
epoxy sealed
The SD2900 is a gold metallized N-Channel MOS
ORDER CODE BRANDING
field-effect RF power transistor. It is intended for
SD2900 SD2900
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T = 25 oC)
case
Symbol Parameter Value Unit
V Drain Source Voltage 65 V
(BR)DSS
VDGR 65 V
Drain-Gate Voltage (RGS = 1M?)
V Gate-Source Voltage ±20 V
GS
ID Drain Current 900 mA
P Power Dissipation 21.9 W
DISS
o
Tj Max. Operating Junction Temperature 200 C
o
T Storage Temperature -65 to 150 C
STG
THERMAL DATA
o
Rth(j-c) Junction-Case Thermal Resistance 8.0 C/W
o
Rth(c-s) 0.30 C/W
Case-Heatsink Thermal Resistance ?
* Determined using |
5.3. sd2902.pdf Size:1283K _st  |
 | SD2902
®
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
GOLD METALLIZATION
COMMON SOURCE CONFIGURATION
2 - 500 MHz
15 WATTS
28 VOLTS
12.5 dB MIN. AT 400 MHz
CLASS A OR AB OPERATION
EXCELLENT THERMAL STABILITY
M113
DESCRIPTION
epoxy sealed
The SD2902 is a gold metallized N-Channel MOS
ORDER CODE BRANDING
field-effect RF power transistor. It is intended for
SD2902 SD2902
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
1. Drain 3.Gate
2. Source 4. Source
ABSOLUTE MAXIMUM RATINGS (T = 25 oC)
case
Symbol Parameter Value Unit
V Drain Source Voltage 65 V
(BR)DSS
VDGR 65 V
Drain-Gate Voltage (RGS = 1M?)
V Gate-Source Voltage ±20 V
GS
ID Drain Current 2.5 A
P Power Dissipation 58.3 W
DISS
o
Tj Max. Operating Junction Temperature 200 C
o
T Storage Temperature -65 to 150 C
STG
THERMAL DATA
o
Rth(j-c) Junction-Case Thermal Resistance 3.0 C/W
o
Rth(c-s) 0.30 C/W
Case-Heatsink Thermal Resistance ?
* Determined using a |
Altri tipi di transistor... SD109
, SD1893
, SD1893F
, SD2222A
, SD2222AF
, SD2857
, SD2857F
, SD2904A
, BC639
, SD2907A
, SD2907AF
, SD3019F
, SD3866A
, SD3866AF
, SD3960F
, SD4261
, SD4261F
.
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