SFT131 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: SFT131

Materiale principale: Ge

Struttura: PNP

Potenza massima dissipabile (Pc): 0.55

Tensione tra collettore e base (Ucb): 24

Tensione tra collettore ed emettitore (Uce): 20

Tensione tra base ed emettitore (Ueb): 12

Massima corrente continuativa (Ic): 0.5

Temperatura di giunzione (Tj), °C: 75

Frequenza di transizione (ft): 0.75

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 70

Pack:

Equivalente per i SFT131

SFT131 PDF doc:

5.1. sft1345.pdf Size:358K _sanyo

SFT1345 Ordering number : EN8987 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1345 Applications Features • ON-resistance RDS(on)1=210m (typ.) • Input Capacitance Ciss=1020pF(typ.) ? • 4V drive • Halogen free compliance Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --11 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% --44 A 1.0 W Allowable Power Dissipation PD Tc=25°C35 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 2.3 6.5 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.85 0.5 0.85 0.7 1.2 1 2 3 0.6 0.5 0.6 0 to 0.2 1 : Gate 1 : Gate 1.2 2 : Drain 2 : Drain 1 2 3 3 : Source 3 : Source 4 : Drain 4 : Drain 2.3 2.3 2.3 2.3 SANYO : TP SANYO : TP-FA

5.2. sft1350.pdf Size:361K _sanyo

SFT1350 Ordering number : ENA1874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1350 Applications Features • ON-resistance RDS(on)1=45m (typ.) • Input Capacitance Ciss=590pF(typ.) ? • 4.5V drive • Halogen free compliance Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --19 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% --76 A 1.0 W Allowable Power Dissipation PD Tc=25°C23 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions Package Dimensions unit : mm (typ) unit : mm (typ) 7518-004 7003-004 2.3 6.5 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.85 0.5 0.85 0.7 1.2 1 2 3 0.6 0.5 0.6 0 to 0.2 1 : Gate 1 : Gate 1.2 2 : Drain 2 : Drain 1 2 3 3 : Source 3 : Source 4 : Drain 4 : Drain 2.3 2.3 2.3 2.3 SANYO : TP SANYO : TP-FA

5.3. sft1341.pdf Size:486K _sanyo

SFT1341 Ordering number : ENA1444 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1341 Applications Features • 1.8V drive. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --10 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% --40 A 1.0 W Allowable Power Dissipation PD Tc=25°C15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --40 V Zero-Gate Voltage Drain Current IDSS VDS=--40V, VGS=0V --1 ?A Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 ?A Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--5A 4.6 7.7 S RDS(on)1 ID=--5A, VGS=--4.5

5.4. sft1342.pdf Size:491K _sanyo

SFT1342 Ordering number : ENA1559 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1342 Applications Features • Motor drive application. • 4V drive. Specifications at Ta=25°C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --12 A Drain Current (PW?10?s) IDP PW?10?s, duty cycle?1% --48 A 1.0 W Allowable Power Dissipation PD Tc=25°C15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --60 V Zero-Gate Voltage Drain Current IDSS VDS=--60V, VGS=0V --1 ?A Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 ?A Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--6A 11 S RDS(o

Altri tipi di transistor... SFT123 , SFT124 , SFT125 , SFT125P , SFT126 , SFT127 , SFT128 , SFT130 , TIP41C , SFT131P , SFT141 , SFT142 , SFT143 , SFT144 , SFT145 , SFT146 , SFT150 .