| |
TIP35A
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: TIP35A
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 90
Tensione tra collettore e base (Ucb): 100
Tensione tra collettore ed emettitore (Uce): 60
Tensione tra base ed emettitore (Ueb): 5
Massima corrente continuativa (Ic): 25
Temperatura di giunzione (Tj), °C: 150
Frequenza di transizione (ft): 3
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 20
Pack: TOP3
Equivalente per i TIP35A
TIP35A
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
1.1. tip35are.pdf Size:157K _motorola |
| II
IIIIIIIIIII IIII III
III
Emitter–Base Voltage VEB 5.0IIIIVdc
POWER TRANSISTORS
60–100 VOLTS
IIIIIIIIIII IIIIIIIII
III III
IIIIIIIIIII III
III
Collector Current — Continuous ICIIIIIIIIIAdc
25
125 WATTS
Peak (1) 40
IIIIIIIIIIIIIIIIIIIIIII
I I I
Base Current — Continuous IBIIIIIIIIIAdc
5.0
IIIIIIIIIII III
III
III III
IIIIIIIIIII IIIIIIIII
Total Power Dissipation PDIIIIIIIII
IIIIIIIIIII IIIIIIIII
III III
IIIIIIIIIII III
III
@ TC = 25_C
125 Watts
IIIIIIIIIIIIIIIIIIIIII |
1.2. tip35a_tip35b_tip35c_tip36a_tip36b_tip36c.pdf Size:80K _onsemi |
| @ TC = 25_C
W
TIP3xx
Derate above 25_C
W/_C
Operating and Storage TJ, Tstg -65 to +150 _C
Junction Temperature Range
Unclamped Inductive Load ESB 90 mJ
THERMAL CHARACTERISTICS
A = Assembly Location
Characteristic Symbol Max Unit
Y = Year
WW = Work Week
Thermal Resistance, RqJC 1.0 °C/W
TIP3xx = Device Code
Junction-to-Case
xx = 5A, 5B, 5C
Junction-To-Free-Air RqJA 35.7 °C/W
6A, 6B, 6C
Thermal Resistance
G = Pb-Free Package
Maximum ratings are those values beyond which devic |
5.1. tip35rev.pdf Size:169K _motorola |
| III III
III III III
25 AMPERE
Collector–Emitter Voltage VCEO 60 V 80 V 100 V Vdc
COMPLEMENTARY
IIIIIIIIIII IIII IIII
IIIIIIIIIII IIII IIII
IIIIIIIIIII IIIIIIIII
IIIIIIIIIII IIIIIIIII
III III
III III
III III III
III III III
Collector–Base Voltage VCB 60 V 80 V 100 V Vdc SILICON
IIIIIIIIIII IIII IIII
IIIIIIIIIII IIIIIIIII
IIIIIIIIIII IIIIIIIII
III III
III III
III III III
POWER TRANSISTORS
Emitter–Base Voltage VEB 5.0 Vdc
60–100 VOLTS
IIIIIIIIIII IIIIIIIII
IIIIIIIIIII IIIIII |
5.2. tip35c_tip36c.pdf Size:194K _st2 |
| n at Tcase = 25 °C 125 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C
For PNP type voltage and current values are negative.
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1 °C/W
2/9
TIP35C - TIP36C Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collecto |
5.3. tip35.pdf Size:39K _st2 |
| er 1995
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C
THERMAL DATA
o
Rthj-ca se
Thermal Resistance Junction-case Max 1 C/W
o
ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off for TIP35A/36A
Current (IB = 0) VCE = 30 V 1 mA
for TIP35B/35C/36B/36C
VCB = 60 V 1 mA
I Emitter Cut-off Current V = 5 V 1 mA
EBO EB
(IC = 0)
I Collector Cut-off V = Rated V 0.7 mA
CES CE CEO
Current (VBE = 0)
VCEO( |
5.4. tip35cp_tip36cp.pdf Size:196K _st2 |
| pation at Tcase = 25 °C 125 W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150 °C
For PNP type voltage and current values are negative.
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1 °C/W
2/9
TIP35CP - TIP36CP Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C |
5.5. tip35,36.pdf Size:43K _st2 |
| e Junction-case Max 1 C/W
ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off VCE = 60 V 1 mA
Current (I = 0)
B
IEBO Emitter Cut-off Current VEB = 5 V 1 mA
(IC = 0)
ICES Collector Cut-off VCE = Rated VCEO 0.7 mA
Current (VBE = 0)
VCEO(sus)* Collector-Emitter IC = 30 mA
Sustaining Voltage for TIP36B 80 V
(IB = 0) for TIP35C/36C 100 V
hFE* DC Current Gain IC = 1.5 A VCE = 4 V 25
IC = 15 A |
5.6. tip35-a-b-c.pdf Size:86K _bourns |
| load energy (see Note 4) ?LIC2 90 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C
NOTES: 1. This value applies for tp ? 0.3 ms, duty cycle ? 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit |
5.7. tip35_tip36.pdf Size:154K _mospec 5.8. tip35c.pdf Size:289K _kec |
|
A
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 10
A
V(BR)CEO IC=50mA, IB=0
Collector-emitter Breakdown Voltage 100 - - V
hFE(1) (Note) VCE=5V, IC=1.5A
55 - 160
DC Current Gain
hFE(2) VCE=4V, IC=15A
15 - -
VCE(sat)(1) IC=15A, IB=1.5A
- - 1.8
Collector-Emitter Saturation Voltage V
VCE(sat)(2) IC=25A, IB=5.0A
- - 4.0
VBE VCE=5V, IC=5A
Base-Emitter Voltage - - 1.5 V
fT VCE=5V, IC=1A
Transition Frequency 3.0 - - MHz
Note : hFE(1) Classification R:55~110, O:80~160
2001. 1. |
5.9. tip35ca.pdf Size:440K _kec |
| e 150
Tstg -55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
ICBO VCB=100V, IE=0
Collector Cut-off Current - - 10
A
IEBO VEB=5V, IC=0
Emitter Cut-off Current - - 10
A
V(BR)CEO IC=50mA, IB=0
Collector-emitter Breakdown Voltage 100 - - V
hFE(1) (Note) VCE=5V, IC=1.5A
55 - 160
DC Current Gain
hFE(2) VCE=4V, IC=15A
15 - -
VCE(sat)(1) IC=15A, IB=1.5A
- - 1.8
Collector-Emitter Saturation Voltage V
VCE(s |
5.10. tip35d.pdf Size:227K _inchange_semiconductor |
| ion
isc Silicon NPN Power Transistor TIP35D
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 120 V
Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 2.5 V
VCE(sat)-1
Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A 5.0 V
VCE(sat)-2
Base-Emitter On Voltage IC= 15A; VCE= 4V 2.0 V
VBE(on)-1
Base-Emitter On Voltage IC= 25A; VCE= 4V 4.0 V
VBE(on)-2
ICEO C |
5.11. tip35_35a_35b_35c.pdf Size:160K _inchange_semiconductor |
| Storage temperature
V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 UNIT Ўж /W
|
Altri tipi di transistor... TIP34
, TIP34A
, TIP34B
, TIP34C
, TIP34D
, TIP34E
, TIP34F
, TIP35
, 2N1711
, TIP35B
, TIP35C
, TIP35D
, TIP35E
, TIP35F
, TIP36
, TIP36A
, TIP36B
.
|