Tutti i transistor e i loro equivalenti


Tra 3 e 20 caratteri (Solo numeri e lettere)
 
TIP42E
  TIP42E
  TIP42E
 
TIP42E
  TIP42E
  TIP42E
 
TIP42E
  TIP42E
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
Tutti i transistor e i loro equivalenti. Curve Caratteristiche. Datasheet
 

TIP42E . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: TIP42E

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 65

Tensione tra collettore e base (Ucb): 180

Tensione tra collettore ed emettitore (Uce): 140

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 6

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 3

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 20

Pack: TO220

Equivalente per i TIP42E

TIP42E PDF doc:

1.1. tip42e.pdf Size:236K _inchange_semiconductor

TIP42E
TIP42E
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42E DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -140V(Min) ·Complement to Type TIP41E APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IBB Base Current -3 A Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn I

5.1. tip41a_tip42a.pdf Size:205K _st2

TIP42E
TIP42E
TIP41A TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY 3 2 Applications 1 GENERAL PURPOSE CIRCUITS TO-220 AUDIO AMPLIFIER POWER LINEAR AND SWITCHING Description Internal Schematic Diagram The TIP41A is a silicon base island technology NPN power transistor Jedec TO-220 plastic package with improved performances than the industry standard TIP41A that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42A. Order Codes Part Number Marking Package Packing TIP41A TIP41A TO-220 TUBE TIP42A TIP42A TO-220 TUBE rev.1 October 2005 1/10 www.st.com 10 1 Absolute Maximum Ratings TIP42A 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitte-Base Voltage (

5.2. tip41c_tip42c.pdf Size:275K _st2

TIP42E
TIP42E
TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Table 1. Device summary Order code Marking Package Packaging TIP41C R TIP41C (Note 1 on page 4) TIP41C O TO-220 Tube TIP41C Y TIP42C R TIP42C (Note 1 on page 4) TIP42C O TO-220 Tube TIP42C Y November 2007 Rev 2 1/12 www.st.com 12 Contents TIP41C - TIP42C Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . .

5.3. tip42abc.pdf Size:38K _fairchild_semi

TIP42E
TIP42E

5.4. tip42_tip42a_tip42b_tip42c.pdf Size:242K _fairchild_semi

TIP42E
TIP42E

5.5. tip42.pdf Size:46K _samsung

TIP42E
TIP42E
TIP42 SERIES (TIP42/42A/42B/42C) PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP41/41A/41B/41C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP42 VCBO -40 V : TIP42A -60 V : TIP42B -80 V : TIP42C -100 V Collector Emitter Voltage : TIP42 VCEO -40 V : TIP42A -60 V : TIP42B -80 V 1.Base 2.Collector 3.Emitter : TIP42C -100 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -6 A Collector Current (Pulse) IC -10 A Base Current IB -2 A Collector Dissipation ( TC=25 ) PC 65 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP42 BVCEO(sus) IC = -30mA, IB = 0 -40 V : TIP42A -60 V : TIP42B -80 V : TIP42C -100 V Collector Cutoff Current : TIP42/42A ICEO VCE = -30V, IB = 0

5.6. tip42_tip42a_tip42b_tip42c_to-220.pdf Size:237K _mcc

TIP42E
TIP42E
MCC Micro Commercial Components TM TIP42/42A/42B/42C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon PNP The complementary NPN types are the TIP41 respectively Epoxy meets UL 94 V-0 flammability rating Power Transistors Moisure Sensitivity Level 1 Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) TO-220 Symbol Parameter Value Unit B C VCBO -40 TIP42 Collector-base voltage -60 V S F TIP42A (Open emitter) -80 TIP42B -100 TIP42C Q VCEO -40 T TIP42 Collector-emitter voltage -60 V TIP42A (Open base) -80 A TIP42B -100 TIP42C U VEBO Emitter-base Voltage (Open collector) -5 V 1 2 3 IC Collector Current -6 A ICM Collector Current Pulse -10 A H IB Base Current -2 A Total Device Dissipati

5.7. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

TIP42E
TIP42E
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, Epoxy Meets UL 94 V-0 @ 0.125 in 65 WATTS Pb-Free Packages are Available* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4 TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector-Base Voltage TIP41, TIP42 VCB 40 Vdc TO-220AB TIP4xxG TIP41A, TIP42A 60 CASE 221A AYWW TIP41B, TIP42B 80 STYLE 1 TIP41C, TIP42C 100 1 2 3 Emitter-Base Voltage VEB 5.0 Vdc Collector Current- Continuous IC 6.0 Adc Peak 10 TIP4xx = Device Code Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C Total Power Dissipation @ TC = 25C PD 65 W 2, 2A, 2B, 2C

5.8. tip42c.pdf Size:156K _utc

TIP42E
TIP42E
UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR ? DESCRIPTION The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. ? FEATURES * Complement to TIP41C ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TIP42CL-x-TA3-T TIP42CG-x-TA3-T TO-220 B C E Tube TIP42CL-x-TF3-T TIP42CG-x-TF3-T TO-220F B C E Tube TIP42CL-x-TN3-R TIP42CG-x-TN3-R TO-252 B C E Tape Reel TIP42CL-x-TN3-T TIP42CG-x-TN3-T TO-252 B C E Tube TIP42CL-x-TQ2-R TIP42CG-x-TQ2-R TO-263 B C E Tape Reel TIP42CL-x-TQ2-T TIP42CG-x-TQ2-T TO-263 B C E Tube www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R203-007.F TIP42C PNP PLANAR TRANSISTOR ? ABSOLUTE MAXIMUM RATING (unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage VCBO -100 V Collector to Emitter Voltage VCEO -1

5.9. tip41_tip42.pdf Size:189K _mospec

TIP42E
TIP42E
A A A A

5.10. tip41_a_b_c_tip42.pdf Size:317K _cdil

TIP42E
TIP42E
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP41, A, B, C NPN TIP42, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP41 TIP41A TIP41B TIP41C DESCRIPTION SYMBOL UNIT TIP42 TIP42A TIP42B TIP42C VCEO Collector Emitter Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 6.0 A ICM Collector Current Peak 10 A IB Base Current 2.0 A Power Dissipation upto Tc=25?C PD 65 W Derate above 25?C 520 mW/?C Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Unclamped Inductive Load *E 62.5 mJ Energy Tstg Storage Temperature 150 ?C Tj Junction Temperature - 65 to +150 ?C THERMAL RESISTANCE Junction to Ca

5.11. tip42c.pdf Size:66K _kec

TIP42E
TIP42E
SEMICONDUCTOR TIP42C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP41C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L VCBO -100 V Collector-Base Voltage H 5.60 MAX C C J 1.37 MAX VCEO -100 V Collector-Emitter Voltage K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage -5 V M 2.54 K N 4.70 MAX IC DC -6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse -10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current -2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 Collector Emitter

5.12. tip42cf.pdf Size:435K _kec

TIP42E
TIP42E
SEMICONDUCTOR TIP42CF TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP41CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M VCBO -100 V Collector-Base Voltage 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCEO -100 V Collector-Emitter Voltage _ P 6.8 0.1 + _ Q 4.5 0.2 + VEBO Emitter-Base Voltage -5 V _ + R 2.6 0.2 N N H S 0.5 Typ IC DC -6 Collector Current A ICP Pulse -10 1. BASE 1 2 3 IB Base Current -2 A 2. COLLECTOR 2 W Ta=25 3. EMITTER Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VC

5.13. tip42f.pdf Size:236K _inchange_semiconductor

TIP42E
TIP42E
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42F DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -160V(Min) ·Complement to Type TIP41F APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IBB Base Current -3 A Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth j-c Thermal Resistance,Junction to Ambient 62.5 ?/W Rth j-a isc Website:www.iscsemi.cn www.iscsemi.cn I

5.14. tip42_42a_42b_42c.pdf Size:180K _inchange_semiconductor

TIP42E
TIP42E
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors TIP42/42A/42B/42C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- TIP42; -60V(Min)- TIP42A -80V(Min)- TIP42B; -100V(Min)- TIP42C ·Complement to Type TIP41/41A/41B/41C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT TIP42 -40 TIP42A -60 VCBO Collector-Base Voltage V TIP42B -80 TIP42C -100 TIP42 -40 TIP42A -60 VCEO Collector-Emitter Voltage V TIP42B -80 TIP42C -100 VEBO Emitter-Base Voltage -5 V Collector Current-Continuous -6 A IC Collector Current-Peak -10 A ICM Base Current -2 A IBB Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Junction Temperature 150 ? Tj Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn I

5.15. tip42_abc.pdf Size:208K _lge

TIP42E
TIP42E
TIP42/42A/42B/42C TO-220 Transistor (PNP) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Complement to TIP41/41A/41B/41C Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP42 TIP42A TIP42B TIP42C Units VCBO Collector-Base Voltage -40 -60 -80 -100 V VCEO Collector-Emitter Voltage -40 -60 -80 -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -6 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP42 -40 TIP42A -60 V(BR)CBO IC= -1mA, IE=0 V TIP42B -80 TIP42C -100 Collector-emitter breakdown voltage TIP42 -40 TIP42A -60 V(BR)CEO* IC= -30mA, IB=0 V TIP42B -80 TIP42C -100 Emitter-base breakdown vol

5.16. tip42.pdf Size:747K _wietron

TIP42E
TIP42E
TIP42/42A/42B/42C PNP Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 Features: 3 1 * Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR * Complement to TIP41/41A/41B/41C 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol TIP42 TIP42A TIP42B TIP42C Units Collector-Base Voltage VCBO -40 -60 -80 -100 V Collector-Emitter Voltage VCEO -40 -60 -80 -100 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -6 A Collector Power Dissipation PC 2 W Junction Temperature TJ 150 ? Storage Temperature Range Tstg -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP42 -40 TIP42A -60 V(BR)CBO IC= -1mA, IE=0 V TIP42B -80 TIP42C -100 Collector-emitter breakdown voltage TIP42 -40 TIP42A -60 V(BR)CEO* IC= -30mA, IB=0 V TIP42B -80 TIP42C -100 Emitter-base bre

5.17. htip42c.pdf Size:37K _hsmc

TIP42E
TIP42E
Spec. No. : HE6733 HI-SINCERITY Issued Date : 1994.08.10 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HTIP42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP42C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 65 W Total Power Dissipation (TA=25°C) .....................................................................................................................

Altri tipi di transistor... TIP41D , TIP41E , TIP41F , TIP42 , TIP42A , TIP42B , TIP42C , TIP42D , C945 , TIP42F , TIP47 , TIP48 , TIP49 , TIP50 , TIP501 , TIP502 , TIP503 .

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