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MMDT4403
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: MMDT4403
Materiale principale: Si
Struttura: PNP*PNP
Potenza massima dissipabile (Pc): 0.2
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 40
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.6
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft): 200
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 60
Pack: SOT363
Equivalente per i MMDT4403
MMDT4403
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
1.1. mmdt4403.pdf  Size:170K _diodes  |
 | um Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC -600 mA
Power Dissipation (Note 1, 2) Pd 200 mW
Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W
R?JA
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad l |
1.2. mmdt4403_sot-363.pdf Size:499K _mcc  |
 | oltage 40 --- Vdc
(IC=-1mAdc, IB=0)
H
V(BR)CBO Collector-Base Breakdown Voltage 40 --- Vdc
(IC=100uAdc, IE=0)
M
K
V(BR)EBO Collector-Emitter Breakdown Voltage 5 --- Vdc J
(IE=100uAdc, IC=0)
D
L
ICBO Collector Cutoff Current --- 0.1 uAdc
(VCB=50Vdc,IE=0)
IEBO Emitter Cutoff Current --- 0.1 uAdc
(VEB=-5Vdc,IC=0)
DC Current Gain
DIMENSIONS
(IC=0.1mAdc, VCE=1Vdc) 30 ---
hFE (IC=1mAdc, VCE=1Vdc) 60 ---
INCHES MM
(IC=10mAdc, VCE=1Vdc) 100 ---- ---
DIM MIN MAX MIN MAX NOTE
|
1.3. mmdt4403.pdf Size:247K _secos  |
 | 0 -5 V
Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 µA
Collector cut-off current ICEO VCE=-35 V , IB=0 -0.1 µA
Emitter cut-off current IEBO VEB=-5V , IC=0 -0.1 µA
hFE(1) VCE=-1 V, IC= -0.1mA 30
hFE(2) VCE=-1 V, IC= -1mA 60
DC current gain hFE(3) VCE=-1 V, IC= -10mA 100
hFE(4) VCE=-2 V, IC= -150mA 100 300
hFE(5) VCE=-2 V, IC= -500mA 20
VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V
VBE(sat)1 IC= -150 mA, I |
1.4. mmdt4403.pdf Size:250K _lge  |
 | current ICEO VCE=-35V, IB=0 -0.5 ?A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A
hFE(1) VCE=-1V, IC= -0.1mA 30
hFE(2) VCE=-1V, IC= -1mA 60
DC current gain hFE(3) VCE=-1 V, IC= -10mA 100
hFE(4) VCE=-2 V, IC= -150mA 100 300
hFE(5) VCE=-2 V, IC= -500mA 20
VCE(sat)1 IC=-150 mA, IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500 mA, IB=-50mA -0.75 V
VBE(sat)1 IC= -150 mA, IB=-15mA -0.75 -0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC= -500 mA, IB=-50mA |
Altri tipi di transistor... MMDT2222V
, MMDT3904
, MMDT3904VC
, MMDT3906
, MMDT3906VC
, MMDT3946
, MMDT3946LP4
, MMDT4401
, 2N5401
, MMDT4413
, MMST2222A
, MMST3904
, MMST3906
, MMST4401
, MMST4403
, ZDT6790
, ZUMT619
.
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