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BCP5310
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BCP5310
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 2
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 80
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft): 150
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 63
Pack: SOT223
Equivalente per i BCP5310
BCP5310
PDF doc:
5.1. bcp53t1r.pdf  Size:99K _motorola  |
 | MOTOROLA
Order this document
SEMICONDUCTOR TECHNICAL DATA
by BCP53T1/D
PNP Silicon BCP53T1
Motorola Preferred Device
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in audio amplifier
MEDIUM POWER
applications. The device is housed in the SOT-223 package which is designed for
PNP SILICON
medium power surface mount applications.
HIGH CURRENT
High Current: 1.5 Amps
TRANSISTOR
NPN Complement is BCP56
SURFACE MOUNT
The SOT-223 Package can be soldered using wave or reflow. The formed leads
absorb thermal stress during soldering, eliminating the possibility of damage to
the die
4
Available in 12 mm Tape and Reel COLLECTOR 2,4
Use BCP53T1 to order the 7 inch/1000 unit reel.
1
Use BCP53T3 to order the 13 inch/4000 unit reel.
2
BASE
3
1
CASE 318E-04, STYLE 1
TO-261AA
EMITTER 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 100 |
5.2. bcp51_bcp52_bcp53_3.pdf Size:50K _philips  |
 | DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP51; BCP52; BCP53
PNP medium power transistors
1999 Apr 08
Product specification
Supersedes data of 1997 Apr 08
Philips Semiconductors Product specification
PNP medium power transistors BCP51; BCP52; BCP53
FEATURES PINNING
High current (max. 1 A)
PIN DESCRIPTION
Low voltage (max. 80 V)
1 base
Medium power (max. 1.3 W).
2, 4 collector
3 emitter
APPLICATIONS
Audio, telephony and automotive applications
handbook, halfpage 4
Thick and thin-film circuits.
2, 4
DESCRIPTION
1
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
3
1 2 3
Top view MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCP51 --45 V
BCP52 --60 V
BCP53 --100 V
VCEO collector-emitter voltage open base
BC |
5.3. bc640_bcp53_bcx53.pdf Size:136K _philips  |
 | BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 22 February 2008 Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1. Product overview
Type number[1] Package NPN complement
NXP JEITA JEDEC
BC640[2] SOT54 SC-43A TO-92 BC639
BCP53 SOT223 SC-73 - BCP56
BCX53 SOT89 SC-62 TO-243 BCX56
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
High current
Two current gain selections
High power dissipation capability
1.3 Applications
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -80 V
IC collector current - - -1 A
ICM peak collector current single pulse; tp ? 1ms - - -1.5 A
hFE DC current gain VCE = -2V; 63 - 250
IC = -150 mA
hFE selection -1 |
5.4. bcp53-16.pdf Size:47K _st  |
 | BCP53-16
LOW POWER PNP TRANSISTOR
Ordering Code Marking
BCP53-16 BCP5316
SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTOR
SOT-223 PLASTIC PACKAGE FOR
2
SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
3
THE NPN COMPLEMENTARY TYPE IS
2
BCP56-16
1
APPLICATIONS
SOT-223
MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
AUTOMOTIVE POST-VOLTAGE
REGULATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) -100 V
VCEO Collector-Emitter Voltage (IB = 0) -80 V
VCER -100 V
Collector-Emitter Voltage (RBE = 1K?)
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -1 A
ICM Collector Peak Current (tp < 5 ms) -1.5 A
IB Base Current -0.1 A
IBM Base Peak Current (tp < ms) -0.2 A
Ptot Total Dissipation at Tamb = 25 oC 1.6 W
o
Tstg Storage Temperature -65 to 150 C
o
T Max. Operating Junction Temperature 150 C
j
1/4
September 2003
BCP53-16
|
5.5. bcp52-bcp53.pdf Size:71K _st  |
 | BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
2
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
3
OUTPUT STAGE
2
NPN COMPLEMENTS ARE BCP55 AND
1
BCP56 RESPECTIVELY
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BCP52 BCP53
VCBO Collector-Base Voltage (IE = 0) -60 -100 V
VCEO Collector-Emitter Voltage (IB = 0) -60 -80 V
V Collector-Emitter Voltage (R = 1K?)-60 -100 V
CER BE
VEBO Emitter-Base Voltage (IC = 0) -5 V
IC Collector Current -1 A
ICM Collector Peak Current (tp < 5 ms) -1.5 A
IB Base Current -0.1 A
IBM Base Peak Current (tp < ms) -0.2 A
P Total Dissipation at T = 25 oC2 W
tot c
o
T Storage Temperature -65 to 150 C
stg
o
Tj Max. Operating Junction Temperature 150 C
1/4
October 1997
BCP52/53
THERMAL DATA
o
Rthj-amb
Thermal Re |
5.6. bcp53.pdf Size:51K _fairchild_semi  |
 | BCP53
C
E
C
B
SOT-223
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switching circuits requiring collector currents
to 1.0 A. Sourced from Process 78. See BCP52 for characteristics.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 80 V
CEO
V Collector-Base Voltage 100 V
CBO
V Emitter-Base Voltage 5.0 V
EBO
I Collector Current - Continuous 1.2 A
C
Operating and Storage Junction Temperature Range -55 to +150
T , T C
J stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max Units
BCP53
P |
5.7. bcp51_bcp52_bcp53.pdf Size:140K _siemens  |
 | PNP Silicon AF Transistors BCP 51
... BCP 53
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP 54 BCP 56 (NPN)
Type Marking Ordering Code Pin Configuration Package1)
(tape and reel) 1 2 3 4
BCP 51 BCP 51 Q62702-C2107 B C E C SOT-223
BCP 51-10 BCP 51-10 Q62702-C2109
BCP 51-16 BCP 51-16 Q62702-C2110
BCP 52 BCP 52 Q62702-C2146
BCP 52-10 BCP 52-10 Q62702-C2112
BCP 52-16 BCP 52-16 Q62702-C2113
BCP 53 BCP 53 Q62702-C2147
BCP 53-10 BCP 53-10 Q62702-C2115
BCP 53-16 BCP 53-16 Q62702-C2116
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group 1
BCP 51
... BCP 53
Maximum Ratings
Parameter Symbol Values
BCP 51 BCP 52 BCP 53 Unit
Collector-emitter voltage VCE0 45 60 80 V
RBE ? 1k? VCER 45 60 100
Collector-base voltage VCB0 45 60 100
Emitter-base voltage VEB0 5
Collector current IC 1 A
Peak collector current ICM 1.5
Base current IB 100 mA
Peak base current IBM |
5.8. bcp51m_bcp52m_bcp53m.pdf Size:31K _siemens  |
 | BCP 51M ... BCP 53M
PNP Silicon AF Transistor
4
For AF driver and output stages
5
High collector current
Low collector-emitter saturation voltage
3
Complementary types: BCP 54M...BCP 56M(NPN)
2
1
VPW05980
Type Marking Ordering Code Pin Configuration Package
BCP 51M AAs Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595
BCP 52M AEs Q62702-C2593
BCP 53M AHs Q62702-C2594
Maximum Ratings
Parameter Symbol BCP 51M BCP 52M BCP 53M Unit
Collector-emitter voltage VCEO 45 60 80 V
Collector-base voltage VCBO 45 60 100
Emitter-base voltage VEBO 5 5 5
DC collector current IC 1 mA
Peak collector current ICM 1.5 A
Base current IB 100 mA
Peak base current IBM 200
Ptot 1.7 W
Total power dissipation, TS ? 77 C
Junction temperature Tj 150 C
Storage temperature Tstg -65...+150
Thermal Resistance
1)
Junction ambient RthJA K/W
? 98
Junction - soldering point RthJS
? 43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1 Au -11-1998
|
5.9. bcp53.pdf Size:42K _diodes  |
 | SOT223 PNP SILICON PLANAR
BCP53
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
T
i I i
C
i II V
T T
E
C
T I D T I
B
ABSOLUTE MAXIMUM RATINGS.
T V IT
II V I V V
II i V I V 8 V
i V I V V
I I
i II I
Di i i T
i T T T
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
T I T IT DITI
II V V I
V I
II i V 8 V I
V I
i V V I
V I
II I V V
V V T
i I V V
II i V V I I
i V I
i T V V I V V
V I
i I V V
T i I V V
I V V
I V V
T i i T I V V
I i i I i D I ?
|
5.10. bcp53t1-d.pdf Size:101K _onsemi  |
 | BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
http://onsemi.com
High Current: 1.5 A
NPN Complement is BCP56 MEDIUM POWER HIGH
The SOT-223 Package can be soldered using wave or reflow. The
CURRENT SURFACE MOUNT
formed leads absorb thermal stress during soldering, eliminating the
PNP TRANSISTORS
possibility of damage to the die
COLLECTOR 2,4
Device Marking:
BCP53T1 = AH
BCP53-10T1 = AH-10
BASE
BCP53-16T1 = AH-16
1
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
EMITTER 3
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
MARKING DIAGRAM
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO -80 Vdc
AYW
XXXXXG
Collector-Base Voltage VCBO -100 Vdc
SOT-223
G
CASE 318E
Emitter-Base Voltage VEBO -5.0 Vdc
STYLE 1 1
Collector Cu |
5.11. bcp53.pdf Size:286K _secos  |
 | BCP53
-1A , -100V
PNP Silicon Medium Power Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-223
? Collector-Emitter Voltage:VCEO= -80V
? Complementary types: BCP56 (NPN)
A
M
CLASSIFICATION OF hFE (2)
4
Product-Rank BCP53-10 BCP53-16
Top View
C B
1
2
Range 63~160 100~250
3
K L
E
PACKAGE INFORMATION
D
Package MPQ LeaderSize F G H J
SOT-223 2.5K 13’ inch
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.20 6.70 G - 0.10
B 6.70 7.30 H - -
C 3.30 3.70 J 0.25 0.35
D 1.42 1.90 K - -
E 4.50 4.70 L 2.30 REF.
F 0.60 0.82 M 2.90 3.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -1 A
Collector Power Dissipation PD 1.5 W
Junction Temperature Tj 150 °C
ELECTRICAL CHARACTERIS |
5.12. bcp53.pdf Size:216K _wietron  |
 | BCP53
PNP Silicon Planar Epitaxial Transistor
4
1. BASE
COLLECTOR
2.COLLECTOR
2, 4
P b Lead(Pb)-Free
3.EMITTER
4.COLLECTOR 1
2
3
1
BASE
SOT-223
3
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25?C)
Symbol
Rating Value Unit
V
Collector-Emitter Voltage CEO V
-80
VCBO
Collector-Base Voltage -100 V
VEBO
Emitter-Base Voltage -5 V
IC(DC)
Collector Current (DC) 1 A
PD
Total Device Disspation TA=25?C 1.5 W
Junction Temperature Tj 150 ?C
Storage, Temperature
Tstg -65 to +150 ?C
Device Marking
BCP53=BCX53
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO -80 - - V
(IC=-1mA, IB=0)
Collector-Base Breakdown Voltage - -
V
V(BR)CBO -100
(IC=-100µA, IE=0)
Emitter-Base Breakdown Voltage
V(BR)EBO -5 - - V
(IE=-10 µA, IC=0)
Collector-Emitter Cutoff Current
ICBO - - -100 nA
(VCB =-30V , IE=0)
Emitter-Base Cutoff Current
- - -100 nA
I
EBO
(VEB=-5V , IC=0)
WEITRON
1/3 25-Oct-05
http://www.wei |
Altri tipi di transistor... ZXTP5401FL
, ZXTP5401G
, ZXTP5401Z
, ZXTP558L
, BC846AS
, BC856AS
, BCP5210
, BCP5216
, MJE13003
, BCP5316
, BCP5510
, BCP5516
, BCP5610
, BCP5616
, BCX5210
, BCX5216
, BCX5310
.
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