MMSTA63 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: MMSTA63

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 0.2

Tensione tra collettore e base (Ucb): 0

Tensione tra collettore ed emettitore (Uce): 30

Tensione tra base ed emettitore (Ueb): 0

Massima corrente continuativa (Ic): 0

Temperatura di giunzione (Tj), °C:

Frequenza di transizione (ft): 125

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 10000

Pack: SOT323

Equivalente per i MMSTA63

MMSTA63 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

4.1. mmsta64.pdf Size:66K _rohm

5.1. ssta56_mmsta56.pdf Size:47K _rohm

VEBO -4 V Collector current IC -0.5 A 0.2 W Collector power dissipation PC 0.35 W ? Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ? Mounted on a 7?5?0.6mm CERAMIC SUBSTRATE Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Emitter-base breakdown voltage BVEBO -4 - - V IC = -100mA Collector-emitter breakdown voltage BVCEO -80 - - V IC = -1mA ICBO - - -0.1 VCB= -80V Collector cutoff current µA ICEO - - -1 VCE= -60V Collec

5.2. mmsta13.pdf Size:132K _rohm

lector-base cutoff current ICBO - - 0.1 µA VCB= 30V Emitter-base cutoff current ICEO - - 0.1 µA VEB= 10V Collector-emitter saturation voltage VCE(sat) - - 1.5 V IC/IB= 100mA/ 100µA ? Base-emitter voltage VBE(on) - - 2.0 V VCE= 5V, IC= 100mA 5000 - - VCE= 5V, IC= 10mA - DC current transfer ratio hFE ? 10000 - - VCE= 5V, IC= 100mA Transition frequency fT 125 - - MHz VCE= 5V, IE= -10mA, f=100MHz Collector output capacitance Cob - 5.4 - pF VCB= 10V, f=100kHz, IE= 0 ? Pulsed www.rohm.co

5.3. ssta28_mmsta28.pdf Size:73K _rohm

Junction temperature Tj 150 °C JEDEC : SOT-346 (3) Collector Storage temperature Tstg -55 to +150 °C Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 - - V IC = 100µA Collector-emitter breakdown voltage BVCES 80 - - V IC = 100µA Emitter-base breakdown voltage BVEBO 12 - - V IE = 10µA ICBO - - 0.1 µA VCB = 60V Collector cutoff current IEBO - - 0.1 µA VEB = 10V ICES - - 0.5 µA VCE = 10V VCE(sat) 1 - 0.7 1.

5.4. ssta06_mmsta06.pdf Size:92K _rohm

Collector-emitter breakdown voltage BVCEO 80 - - V IC=1mA Emitter-base breakdown voltage BVEBO 4 - - V IE=100µA ICBO - - 0.1 VCB=80V Collector cutoff current µA ICEO - - 1 VCE=60V Collector-emitter saturation voltage VCE(sat) - - 0.25 V IC/IB=100mA/10mA Base-emitter saturation voltage VBE(ON) - - 1.2 V VCE/IB=1V/100mA 100 - - VCE=1V, IC=10mA DC current transfer ratio hFE - 100 - - VCE=1V, IC=100mA Transition frequency fT 100 - - MHz VCE=2V, IE= -10mA, f=100MHz Rev.B 1/3 SSTA06 /

5.5. mmsta42.pdf Size:112K _diodes

tion: See Page 3 B E • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6.0 V Collector Current (Note 1) IC 200 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @

5.6. mmsta92.pdf Size:116K _diodes

roximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5.0 V Collector Current (Note 1) IC -100 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Charact

5.7. mmsta55_mmsta56.pdf Size:113K _diodes

STA56 Marking K2G (See Page 3) • Ordering & Date Code Information: See Page 3 B E • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol MMSTA55 MMSTA56 Unit Collector-Base Voltage VCBO -60 -80 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4.0 V Collector Current - Continuous (Note 1) IC -500 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W R?JA

5.8. mmsta05_mmsta06.pdf Size:123K _diodes

A06 Marking K1G (See Page 3) • Order & Date Code Information: See Page 3 B E • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol MMSTA05 MMSTA06 Unit Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient (Note 1) 625 °C/W R?JA Operating

5.9. mmsta42_sot-323.pdf Size:194K _mcc

ARACTERISTICS K V(BR)CEO Collector-Emitter Breakdown Voltage 300 --- Vdc DIMENSIONS (IC=1.0mAdc, IB=0) INCHES MM V Collector-Base Breakdown Voltage 300 --- Vdc (BR)CBO DIM MIN MAX MIN MAX NOTE (IC=100uAdc, IE=0) A .071 .087 1.80 2.20 V Collector-Emitter Breakdown Voltage 6.0 --- Vdc (BR)EBO B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 (IE=100uAdc, IC=0) D .026 Nominal 0.65Nominal I Collector-Base Cutoff Current --- 100 nAdc CBO E .047 .055 1.20 1.40 (VCB=200Vdc,IE=0) F .01

5.10. mmsta92_sot-323.pdf Size:199K _mcc

CTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage 300 --- Vdc DIMENSIONS (IC=1.0mAdc, IB=0) INCHES MM V Collector-Base Breakdown Voltage 300 --- Vdc (BR)CBO DIM MIN MAX MIN MAX NOTE (IC=100uAdc, IE=0) A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 V Collector-Emitter Breakdown Voltage 5.0 --- Vdc (BR)EBO C .079 .087 2.00 2.20 (IE=100uAdc, IC=0) D .026 Nominal 0.65Nominal I Collector-Base Cutoff Current --- 250 nAdc E .047 .055 1.20 1.40 CBO F .012 .016 .30 .40 (VCB=200V

5.11. mmsta56.pdf Size:396K _htsemi

, IC=0 -0.5 nA V =-1V, I =-10mA 50 CE C DC current gain hFE VCE=-1V, IC=-100mA 50 Collector-emitter saturation voltage V I =-100mA, I =-10mA -0.25 V CE(sat) C B Base-emitter voltage V V =-1V, I =-100mA -1.2 V BE CE C Transition frequency f V =-1V,I =-100mA , f=100MHz 50 MHz T CE E 1 JinYu www.htsemi.com semiconductor Date:2011/05

5.12. mmsta42.pdf Size:610K _htsemi

) VCE=10V,IC=10mA 100 200 hFE(3) VCE=10V,IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz 1 JinYu www.htsemi.com semiconductor Date:2011/05  MMST5551 2 JinYu www.htsemi.com semiconductor Date:2011/05  MMST5551 3 JinYu www.htsemi.com semiconductor Date:2011/05

5.13. mmsta92.pdf Size:398K _htsemi

-250 nA CBO CB E V =-200V, I =0 -250 nA CE B Collector cut-off current I CEO V =-300V, I =0 -5 µA CE B Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA V =-10V, I =-1mA 60 CE C DC current gain h V =-10V, I =-10mA 100 200 FE CE C VCE=-10V, IC=-30mA 60 Collector-emitter saturation voltage V I =-20mA, I =-2mA -0.2 V CE(sat) C B Base-emitter saturation voltage VBE(sat) IC=-20mA, IB=-2mA -0.9 V Transition frequency f V =-20V,I =-10mA , f=30MHz 50 MHz T CE E Collector

5.14. mmsta42.pdf Size:215K _lge

E(1) VCE=10V,IC=1mA 60 DC current gain hFE(2) VCE=10V,IC=10mA 100 200 hFE(3) VCE=10V,IC=30mA 75 Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V Transition frequency fT VCE=20V,IC=10mA,f=30MHz 50 MHz  MMSTA42 SOT-323 Transistor (NPN)  MMSTA42 SOT-323 Transistor (NPN)

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