BC858BL
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: BC858BL
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.225
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft): 100
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 220
Pack: SOT23-3
Equivalente per i BC858BL
BC858BL
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
4.1. bc858bw-b.pdf  Size:141K _rohm  |
 | r dissipation PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -65 to +150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC= -50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE= -50µA
- - -100 nA VCB= -30V
Collector cutoff current ICBO
- - 4 µA VCB= -30V, Ta=150°C |
4.2. bc858bw.pdf Size:141K _rohm  |
 | r dissipation PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -65 to +150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC= -50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE= -50µA
- - -100 nA VCB= -30V
Collector cutoff current ICBO
- - 4 µA VCB= -30V, Ta=150°C |
4.3. bc858bw_bc858b.pdf Size:81K _rohm  |
 | tion PC W ?
0.35
Junction temperature Tj 150 ?C
Storage temperature Tstg -55~+150 ?C
? When mounted on 7 ? 5 ? 0.6 mm ceramic board.
Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO -30 - - V IC=-50µA
Collector-emitter breakdown voltage BVCEO -30 - - V IC=-1mA
Emitter-base breakdown voltage BVEBO -5 - - V IE=-50µA
Collector cutoff current ICBO - - -15 nA VCB=-30V
- - -0.3 V IC/IB=-10mA/-0.5mA
Collector-emitte |
Altri tipi di transistor... BC856AL
, BC856BL
, BC857AL
, BC857BDW1
, BC857BL
, BC857CDW1
, BC857CL
, BC858AL
, 2N3563
, BC858CDXV6
, BC858CL
, BCW30L
, BCW32L
, BCW33L
, BCW65AL
, BCW68GL
, BCW70L
.
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