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MUN5313DW1
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: MUN5313DW1
Materiale principale: Si
Struttura: Complementary
Potenza massima dissipabile (Pc): 0
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 50
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft): 0
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 80
Pack: SC-88-6_SC-70-6_SOT-363-6
Equivalente per i MUN5313DW1
MUN5313DW1
PDF doc:
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SEMICONDUCTOR TECHNICAL DATA
by MUN5311DW1T1/D
MUN5311DW1T1
Dual Bias Resistor Transistors
SERIES
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
baseemitter resistor. These digital transistors are designed to replace a single
6
5
device and its external resistor bias network. The BRT eliminates these
4
individual components by integrating them into a single device. In the
1
MUN5311DW1T1 series, two complementary BRT devices are housed in the
2
3
SOT363 package which is ideal for low power surface mount applications
CASE 419B01, STYLE 1
where board space is at a premium.
SOT363
Simplifies Circuit Design
Reduces Board Space
(3) (2) (1)
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and R |
4.2. mun5311dw1t1rev5.pdf Size:308K _motorola  |
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SEMICONDUCTOR TECHNICAL DATA
by MUN5311DW1T1/D
MUN5311DW1T1
Dual Bias Resistor Transistors
SERIES
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
Motorola Preferred Devices
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
baseemitter resistor. These digital transistors are designed to replace a single
6
5
device and its external resistor bias network. The BRT eliminates these
4
individual components by integrating them into a single device. In the
1
MUN5311DW1T1 series, two complementary BRT devices are housed in the
2
3
SOT363 package which is ideal for low power surface mount applications
CASE 419B01, STYLE 1
where board space is at a premium.
SOT363
Simplifies Circuit Design
Reduces Board Space
(3) (2) (1)
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and R |
4.3. mun5311dw1t1-d.pdf Size:824K _onsemi  |
 | MUN5311DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
http://onsemi.com
http://onsemi.com
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. These digital transistors are (3) (2) (1)
designed to replace a single device and its external resistor bias
R1 R2
network. The BRT eliminates these individual components by
Q1
integrating them into a single device. In the
MUN5311DW1T1G series, two complementary BRT devices are
Q2
housed in the SOT-363 package which is ideal for low power surface
R2 R1
mount applications where board space is at a premium.
Features
(4) (5) (6)
Simplifies Circuit Design
Reduces Board Space
6
Reduces Component Count
1
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
These Devices are Pb-Free, Halogen Free/ |
4.4. smun5311dw_series.pdf Size:327K _secos  |
 | SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
SOT-363
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base-emitter
resistor. These digital transistors are designed to replace a single device and its
A
external resistor bias network. The BRT eliminates these individual components by
E
L
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT-363 package which is ideal
for low power surface mount applications where board space is at a premium.
B
FEATURE
Simplifies circuit design F
C H
Reduces board space
J
D G K
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
6 5 Millimeter Millimeter
4
REF. REF. |
4.5. mun5311dw.pdf Size:1456K _wietron  |
 | MUN5311DW Series
6 5
4
6
Dual Bias Resistor Transistor
5
4
R
1
R
2
Q
2
NPN+PNP Silicon
1
2
3
R Q
2
1
P b Lead(Pb)-Free
R
1
SOT-363(SC-88)
1 2 3
( T =25?C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Maximum Ratings A
Value
Rating Symbol Unit
Collector-Emitter Voltage Vdc
VCEO 50
Collector-Base Voltage VCBO Vdc
50
Collector Current-Continuous IC mAdc
100
Thermal Characteristics
Characteristics(One Junction Heated) Symbol Max Unit
187(1)
Total Device Dissipation
PD
mW
256(2)
TA=25?C
1.5(1)
Derate above 25?C
mW/?C
2.0(2)
670(1)
R?JA
Thermal Resistance, Junction to Ambient ?C/W
490(2)
Characteristics(Both Junctions Heated) Symbol Max Unit
250(1)
PD
Total Device Dissipation
mW
385(2)
TA=25?C
2.0(1)
Derate above 25?C
mW/ C
3.0(2)
493(1)
R?JA ?C/W
Thermal Resistance, Junction to Ambient
325(2)
188(1)
R?JL
Thermal Resistance, Junction to Lead ?C/W
208(2)
TJ,Tstg
Junction and Storage, Temper |
Altri tipi di transistor... MUN5232DW1
, MUN5233
, MUN5233DW1
, MUN5235
, MUN5235DW1
, MUN5237DW1
, MUN5311DW1
, MUN5312DW1
, C103
, MUN5314DW1
, MUN5315DW1
, MUN5316DW1
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, MUN5332DW1
, MUN5333DW1
, MUN5334DW1
, MUN5335DW1
.
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