PDTC124XM
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: PDTC124XM
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.25
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 50
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft):
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 0
Pack: SOT883
Equivalente per i PDTC124XM
PDTC124XM
- Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF
2.1. pdtc124xef_2.pdf  Size:54K _motorola  |
 | 2 emitter/ground
Fig.2 Equivalent inverter symbol.
3 collector/output
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negati |
2.2. pdtc124xe_3.pdf Size:55K _motorola  |
 | 8 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124XE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot to |
2.3. pdtc124xef_2.pdf Size:54K _philips  |
 | 2 emitter/ground
Fig.2 Equivalent inverter symbol.
3 collector/output
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negati |
2.4. pdtc124xe_3.pdf Size:55K _philips  |
 | 8 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC124XE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - +40 V
negative --10 V
IO output current (DC) - 100 mA
ICM peak collector current - 100 mA
Ptot to |
Altri tipi di transistor... PDTC124EM
, PDTC124ET
, PDTC124EU
, PDTC124TE
, PDTC124TM
, PDTC124TT
, PDTC124TU
, PDTC124XE
, BC546
, PDTC124XT
, PDTC124XU
, PDTC143EE
, PDTC143EM
, PDTC143ET
, PDTC143EU
, PDTC143TE
, PDTC143TM
.
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