PDTC143EE
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: PDTC143EE
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.15
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 50
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft):
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 0
Pack: SOT416
Equivalente per i PDTC143EE
PDTC143EE
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1.1. pdtc143ee_2.pdf  Size:56K _motorola  |
 | t
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 31 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EE
LIMITING VALUES
|
1.2. pdtc143ee_2.pdf Size:56K _philips  |
 | t
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 150 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 Jul 31 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EE
LIMITING VALUES
|
2.1. pdtc143ek_2.pdf Size:57K _motorola  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EK
LIMITING VALUES
In |
2.2. pdtc143es_2.pdf Size:58K _motorola  |
 | ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 May 20 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143ES
LIMITING VALUES
In accordance with the Absolute M |
2.3. pdtc143et_4.pdf Size:56K _motorola  |
 | itter/ground
symbol.
3 collector/output
1999 Apr 15 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 30 V
negative --10 V
IO output current (DC) - |
2.4. pdtc143eu_3.pdf Size:58K _motorola  |
 |
2 emitter/ground
symbol.
3 collector/output
1999 Apr 14 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 30 V
negative --10 V
IO output current (D |
2.5. pdtc143e_series.pdf Size:182K _philips  |
 | 43EEF
PDTC143EK SOT346 SC-59 02 PDTA143EK
PDTC143EM SOT883 SC-101 E1 PDTA143EM
PDTC143ES SOT54 (TO-92) SC-43 TC143E PDTA143ES
PDTC143ET SOT23 - *02 PDTA143ET
PDTC143EU SOT323 SC-70 *02 PDTA143EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 05 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
PDTC143E series
R1 = 4.7 k?, R2 = 4.7 k?
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER SIMPLIFIED OUTL |
2.6. pdtc143ek_2.pdf Size:57K _philips  |
 | ICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 250 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
-
R1
1998 May 18 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EK
LIMITING VALUES
In |
2.7. pdtc143es_2.pdf Size:58K _philips  |
 | ARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base - - 50 V
IO output current (DC) - - 100 mA
ICM peak collector current - - 100 mA
Ptot total power dissipation Tamb ? 25 °C - - 500 mW
hFE DC current gain IC = 10 mA; VCE =5V 30 - -
R1 input resistor 3.3 4.7 6.1 k?
R2
------- resistor ratio 0.8 1 1.2
R1
1998 May 20 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143ES
LIMITING VALUES
In accordance with the Absolute M |
2.8. pdtc143et_4.pdf Size:56K _philips  |
 | itter/ground
symbol.
3 collector/output
1999 Apr 15 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 30 V
negative --10 V
IO output current (DC) - |
2.9. pdtc143eu_3.pdf Size:58K _philips  |
 |
2 emitter/ground
symbol.
3 collector/output
1999 Apr 14 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143EU
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive - 30 V
negative --10 V
IO output current (D |
Altri tipi di transistor... PDTC124TE
, PDTC124TM
, PDTC124TT
, PDTC124TU
, PDTC124XE
, PDTC124XM
, PDTC124XT
, PDTC124XU
, P605
, PDTC143EM
, PDTC143ET
, PDTC143EU
, PDTC143TE
, PDTC143TM
, PDTC143TT
, PDTC143TU
, PDTC143XE
.
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