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RN1118
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: RN1118
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 50
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), °C:
Frequenza di transizione (ft):
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 0
Pack: SOT-416_SC-75_SSM
Equivalente per i RN1118
RN1118
PDF doc:
1.1. rn1114ft_rn1118ft_100406.pdf  Size:187K _toshiba  |
 | RN1114FT~RN1118FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT
Switching, Inverter Circuit, Interface Circuit
Unit: mm
and Driver Circuit Applications
Built-in bias resistors
Enabling simplified circuit design
Enabling reduction in the quantity of parts and manufacturing process
Complementary to the RN2114FT to 2118FT
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1114FT 1 10
RN1115FT 2.2 10
RN1116FT 4.7 10
RN1117FT 10 4.7
RN1118FT 47 10
JEDEC ?
JEITA ?
TOSHIBA 2-1B1A
Weight: 2.2 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1114FT to 1118FT
Collector-emitter voltage VCEO 50 V
RN1114FT 5
RN1115FT 6
Emitter-base voltage RN1116FT VEBO 7 V
RN1117FT 15
RN1118FT 25
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1114FT to 1118FT
Junction temperature Tj 15 |
1.2. rn1114mfv_rn1115mfv_rn1116mfv_rn1117mfv_rn1118mfv.pdf Size:174K _toshiba  |
 | RN1114MFV?RN1118MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Unit: mm
Driver Circuit Applications
1.2 ± 0.05
With built-in bias resistors
0.80 ± 0.05
Simplify circuit design
Reduce a quantity of parts and manufacturing process
1
Complementary to RN2114MFV to RN2118MFV
1
3
2
Equivalent Circuit and Bias Resister Values
Type No. R1 (k?) R2 (k?)
RN1114MFV 1 10
1.BASE
RN1115MFV 2.2 10
2.EMITTER
VESM
RN1116MFV 4.7 10
3.COLLECTOR
RN1117MFV 10 4.7
JEDEC ?
RN1118MFV 47 10
JEITA ?
TOSHIBA 2-1L1A
Weight: 1.5 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage RN1114MFV VCBO 50 V
Land Pattern Example
to 1118MFV
Collector-emitter voltage VCEO 50 V
RN1114MFV 5
0.5mm
RN1115MFV 6
0.45mm
Emitter-base voltage RN1116MFV VEBO 7 V |
1.3. rn1114-rn1118.pdf Size:160K _toshiba  |
 | RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114,RN1115,RN1116,RN1117,RN1118
Switching, Inverter Circuit, Interface Circuit
Unit: mm
And Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114~2118
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1114 1 10
RN1115 2.2 10
RN1116 4.7 10
RN1117 10 4.7
RN1118 47 10
JEDEC ?
EIAJ ?
TOSHIBA 2-2H1A
Weight: 2.4mg
Maximum Ratings (Ta = 25°
°C)
°
°
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1114~1118
Collector-emitter voltage VCEO 50 V
RN1114 5
RN1115 6
Emitter-base voltage RN1116 VEBO 7 V
RN1117 15
RN1118 25
Collector current Ic 100 mA
Collector power dissipation Pc 100 mW
RN1114~1118
Junction temperature Tj 150 C
Storage temperature range Tstg -55~150 C
RN1114~RN1118
Electrical Characteristi |
1.4. rn1114f_rn1118f_100406.pdf Size:209K _toshiba  |
 | RN1114F~RN1118F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114F,RN1115F,RN1116F,RN1117F,RN1118F
Switching, Inverter Circuit, Interface Circuit
Unit: mm
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2114F to 2118F
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1114F 1 10
RN1115F 2.2 10
RN1116F 4.7 10
RN1117F 10 4.7
RN1118F 47 10
ESM
JEDEC ?
JEITA ?
TOSHIBA 2-2HA1A
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1114F to 1118F
Collector-emitter voltage VCEO 50 V
RN1114F 5
RN1115F 6
Emitter-base voltage RN1116F VEBO 7 V
RN1117F 15
RN1118F 25
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1114F to 1118F
Junction temperature Tj 150 °C
Storage temperature range Tstg -55 to |
1.5. rn1114_rn1118_100406.pdf Size:207K _toshiba  |
 | RN1114~RN1118
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1114, RN1115, RN1116, RN1117, RN1118
Switching, Inverter Circuit, Interface Circuit
Unit: mm
and Driver Circuit Applications
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2114 to 2118
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k?) R2 (k?)
RN1114 1 10
RN1115 2.2 10
RN1116 4.7 10
RN1117 10 4.7
RN1118 47 10
JEDEC ?
JEITA ?
TOSHIBA 2-2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
RN1114 to 1118
Collector-emitter voltage VCEO 50 V
RN1114 5
RN1115 6
Emitter-base voltage RN1116 VEBO 7 V
RN1117 15
RN1118 25
Collector current IC 100 mA
Collector power dissipation PC 100 mW
RN1114 to 1118
Junction temperature Tj 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Usi |
Altri tipi di transistor... RN1116
, RN1117FT
, RN1117F
, RN1117MFV
, RN1117
, RN1118FT
, RN1118F
, RN1118MFV
, 2SC2073
, RN1119MFV
, RN1130MFV
, RN1131MFV
, RN1132MFV
, RN1301
, RN1302
, RN1303
, RN1304
.
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