RN1414 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: RN1414

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 0

Tensione tra collettore e base (Ucb): 0

Tensione tra collettore ed emettitore (Uce): 50

Tensione tra base ed emettitore (Ueb): 0

Massima corrente continuativa (Ic): 0.1

Temperatura di giunzione (Tj), °C:

Frequenza di transizione (ft):

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 0

Pack: SOT-346_SC-59_S-Mini

Equivalente per i RN1414

RN1414 PDF doc:

1.1. rn1414-rn1418.pdf Size:170K _toshiba

RN1414?RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414,RN1415,RN1416 RN1417,RN1418 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2414~RN2418 Equivalent Circuit and Bias Resister Values Type No. R1 (k?) R2 (k?) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 4.7 RN1418 47 10 JEDEC SC-236MOD EIAJ SC-59 TOSHIBA 2-3F1A Weight: 0.012g Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V RN1414~1418 Collector-emitter voltage VCEO 50 V RN1414 5 RN1415 6 Emitter-base voltage RN1416 VEBO 7 V RN1417 15 RN1418 25 Collector current IC 100 mA Collector power dissipation PC 200 mW RN1414~1418 Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C RN1414?RN1418 Electrical Ch

5.1. rn1412_rn1413.pdf Size:107K _toshiba

RN1412,RN1413 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1412,RN1413 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2412, RN2413 Equivalent Circuit Maximum Ratings (Ta = 25° °C) ° ° Characteristic Symbol Rating Unit JEDEC TO-236MOD EIAJ SC-59 Collector-base voltage VCBO 50 V TOSHIBA 2-3F1A Collector-emitter voltage VCEO 50 V Weight: 0.012g Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature range Tstg -55~125 C Electrical Characteristics (Ta = 25° °C) ° ° Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current

5.2. rn1410_rn1411.pdf Size:103K _toshiba

RN1410,RN1411 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1410,RN1411 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2410, RN2411 Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC TO-236MOD Characteristic Symbol Rating Unit EIAJ SC-59 Collector-base voltage VCBO 50 V TOSHIBA 2-3F1A Collector-emitter voltage VCEO 50 V Weight: 0.012g Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~125 °C Electrical Characteristics (Ta = 25°C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current ICBO ? VCB = 50V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO ? VEB = 5V, IC = 0 ? ? 100 nA DC current gain hFE ? VCE = 5V,

Altri tipi di transistor... RN1406 , RN1407 , RN1408 , RN1409 , RN1410 , RN1411 , RN1412 , RN1413 , TIP142 , RN1415 , RN1416 , RN1417 , RN1418 , RN1421 , RN1422 , RN1423 , RN1424 .