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2SC5087
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: 2SC5087
Materiale principale: Si
Struttura: NPN
Potenza massima dissipabile (Pc): 0.15
Tensione tra collettore e base (Ucb): 0
Tensione tra collettore ed emettitore (Uce): 12
Tensione tra base ed emettitore (Ueb): 0
Massima corrente continuativa (Ic): 0.08
Temperatura di giunzione (Tj), °C: 125
Frequenza di transizione (ft): 7000
Capacità di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 0
Pack: SMQ(2.9x2.9)
Equivalente per i 2SC5087
2SC5087
PDF doc:
1.1. 2sc5087r_101223.pdf  Size:100K _toshiba  |
 | 2SC5087R
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087R
VHF to UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
1.Base(B)
Storage temperature range Tstg -55 to 125 °C
2.Emitter1(E1)
Note: Using continuously under heavy loads (e.g. the application of high
3.Collector(C)
temperature/current/voltage and the significant change in
SMQ 4.Emitter(E2)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC ?
operating temperature/current/voltage, etc.) are within the
JEITA ?
absolute maximum ratings. |
1.2. 2sc5087.pdf Size:476K _toshiba  |
 | 2SC5087
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 13dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA ?
TOSHIBA 2-3J1C
Weight: 0.012 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 18 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE = 10 |
4.1. 2sc5086ft.pdf Size:125K _toshiba  |
 | 2SC5086FT
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086FT
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 11dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA ?
TOSHIBA 2-1B1A
Weight: 0.0022 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE |
4.2. 2sc5089.pdf Size:465K _toshiba  |
 | 2SC5089
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 13dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 1.5 V
Base current IB 20 mA
Collector current IC 40 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz
?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ?
Insertion gain dB
?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ? 7 ?
NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.1 2.5
Noise figure dB
NF (2) VCE = 8 V, |
4.3. 2sc5085.pdf Size:471K _toshiba  |
 | 2SC5085
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5085
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 11dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE |
4.4. 2sc5086.pdf Size:474K _toshiba  |
 | 2SC5086
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 11dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA ?
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE = 10 |
4.5. 2sc5084.pdf Size:474K _toshiba  |
 | 2SC5084
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5084
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 11dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE |
4.6. 2sc5088.pdf Size:481K _toshiba  |
 | 2SC5088
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5088
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
• Low noise figure, high gain.
• NF = 1.1dB, |S |2 = 13dB (f = 1 GHz)
21e
Maximum Ratings (Ta =
= 25°C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 3 V
Base current IB 40 mA
Collector current IC 80 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
JEDEC ?
JEITA ?
TOSHIBA 2-2K1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta =
= 25°C)
=
=
Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz
?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 18 ?
Insertion gain dB
?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ?
NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ?
Noise figure dB
NF (2) VCE = 10 |
4.7. 2sc5081.pdf Size:25K _hitachi  |
 | 2SC5081
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK–4
2
3
1
1. Collector
4
2. Emitter
3. Base
4. Emitter
2SC5081
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 8V
Emitter to base voltage VEBO 1.5 V
Collector current IC 50 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 ° C
Storage temperature Tstg –55 to +150 ° C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 15 — — V IC = 10 µ A, IE = 0
voltage
Collector cutoff current ICBO — — 1 µ A VCB = 12 V, IE = 0
ICEO — — 1 mA VCE = 8 V, RBE = ?
Emitter cutoff current IEBO — — 10 µ A VEB = 1.5 V, IC = 0
DC current transfer ratio hFE 50 90 160 VCE = 5 V, IC = 20 mA
Co |
4.8. 2sc5080.pdf Size:48K _hitachi  |
 | 2SC5080
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz Typ
• High gain, low noise figure
PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK-4
2
3
1
1. Collector
2. Emitter
4
3. Base
4. Emitter
2SC5080
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 15 V
Collector to emitter voltage VCEO 8V
Emitter to base voltage VEBO 1.5 V
Collector current IC 50 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 150 ° C
Storage temperature Tstg –55 to +150 ° C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 15 — — V IC = 10 µ A, IE = 0
voltage
Collector cutoff current ICBO — — 1 µ A VCB = 12 V, IE = 0
ICEO — — 1 mA VCE = 8 V, RBE = ?
Emitter cutoff current IEBO — — 10 µ A VEB = 1.5 V, IC = 0
DC current transfer ratio hFE 50 90 160 VCE = 5 V, IC = 20 mA
Col |
4.9. 2sc508.pdf Size:123K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC508
DESCRIPTION Ў¤ With TO-66 package Ў¤ High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS For power switching and TV horizontal output applications. Ў¤
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=Ўж )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER
SEM GE
Open base
CONDITIONS
HAN INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature
OND IC
TOR UC
VALUE 180 60 6 4
UNIT V V V A W Ўж Ўж
Open emitter
Open collector
TC=25Ўж
25 150 -65~200
|
Altri tipi di transistor... 2SC4250FV
, 2SC4915
, 2SC5064
, 2SC5065
, 2SC5066
, 2SC5084
, 2SC5085
, 2SC5086
, 2SC1815
, 2SC5087R
, 2SC5088
, 2SC5092
, 2SC5095
, 2SC5096
, 2SC5106
, 2SC5107
, 2SC5108
.
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