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D882 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: D882

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 0.5

Tensione tra collettore e base (Vcb): 40

Tensione tra collettore ed emettitore (Vce): 30

Tensione tra base ed emettitore (Veb): 6

Massima corrente continuativa (Ic): 3

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 50

Capacità di uscita (Cc), Pf:

Il guadagno di tensione in continua (hfe): 60

Pack: SOT89

Equivalente per i D882

D882 Datasheet PDF:

1.1. 2sd882-gr-r-o-y.pdf Size:305K _update

D882
D882

2SD882-R MCC Micro Commercial Components TM 2SD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD882-Y Phone: (818) 701-4933 2SD882-GR Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat

1.2. tsd882s.pdf Size:244K _update

D882
D882

 TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition: Pin Definition: PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information ● Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing ● Complementary part with TSB

1.3. tsd882ck.pdf Size:616K _update

D882
D882

 TSD882 Low Vcesat NPN Transistor TO-126 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO 60V 2. Collector 3. Base BVCEO 30V IC 3A VCE(SAT) 0.5V @ IC=2A, IB=200mA Features Ordering Information ● Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Part No. Package Packing ● Complementary part with TSB772 TSD882CK B0 TO-126 200pcs / Bulk TSD882CK B0G TO-126 200pcs / Bulk

1.4. 2sd882zgp.pdf Size:120K _update

D882
D882

CHENMKO ENTERPRISE CO.,LTD 2SD882ZGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.50+0

1.5. 2sd882gp.pdf Size:108K _update

D882
D882

CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. *

1.6. 2sd882.pdf Size:110K _st

D882
D882

2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications 1 Voltage regulation 2 3 Relay driver SOT-32 Generic switch (TO-126) Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology resulting in rugged

1.7. ksd882.pdf Size:131K _fairchild_semi

D882
D882

November 2007 KSD882 NPN Epitaxial Silicon Transistor Recommended Applications Audio Frequency Power Amplifier Featuers Low Speed Switcing TO-126 1 Complement to KSB772. 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 40 V BVCEO Collector-Emitter Voltage 30 V BVEBO Emitter-Bas

1.8. 2sd882.pdf Size:165K _nec

D882
D882

1.9. 2sd882.pdf Size:210K _utc

D882
D882

UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3

1.10. d882ss.pdf Size:154K _utc

D882
D882

UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3

1.11. 2sd882l.pdf Size:23K _utc

D882
D882

UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772L APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92L 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-ba

1.12. 2sd882s.pdf Size:141K _utc

D882
D882

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD882

1.13. std882d.pdf Size:290K _auk

D882
D882

STD882D NPN Silicon Transistor Description PIN Connection • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with STB772D • Switching Application Features • Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximum r

1.14. d882.pdf Size:271K _secos

D882
D882

D882 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126 3.2± 0.2 8.0±0.2 2.0± 0.2 4.14±0.1 Features O2.8±0.1 O3.2±0.1 11.0±0.2 1.4±0.1 1 2 3 o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.27±0.1 Symbol Parameter Value Units 15.3±0.2 VCBO Collector-Base Voltage 40

1.15. d882s.pdf Size:209K _secos

D882
D882

D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Power Dissipation G H J Millimeter REF. A D Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B B 4.30 4.70 C 12.70 - K D 3.30 3.81 E 0.36 0.56 Rank R 0 Y GR F 0.36 0.51 E C F G 1.27 TYP. 60-120 160-320 200-400

1.16. csd882_p_q.pdf Size:243K _cdil

D882
D882

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR CSD882 TO126 Plastic Package E C B Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >40 V

1.17. ktd882.pdf Size:396K _kec

D882
D882

SEMICONDUCTOR KTD882 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER A LOW SPEED SWITCHING B D C E FEATURES F Complementary to KTB772. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D ?3.2 0.1 E 3.5 VCBO Collector-Base Voltage 40 V _ + F 11.0 0.3 G 2.9 MAX VCEO Collector-

1.18. 2sd882.pdf Size:201K _inchange_semiconductor

D882
D882

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD882 DESCRIPTION · ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDIT

1.19. d882.pdf Size:299K _htsemi

D882
D882

D882 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE Power dissipation 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Tempera

1.20. d882_to-252-2l.pdf Size:195K _lge

D882
D882

D882 Transistor(NPN) 1. BASE TO-252-2L 2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation

1.21. d882_to-251.pdf Size:230K _lge

D882
D882

D882(NPN) TO-251 Transistor TO-251 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A PC Collector Power

1.22. d882_to-126.pdf Size:254K _lge

D882
D882

D882(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Power dissipation 2.500 7.400 2.900 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25? unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 0.000 VCBO Collector-Base Voltage 40 V 11.000 0.300 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Vol

1.23. d882_sot-89.pdf Size:200K _lge

D882
D882

D882 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 SOT-89 2 4.6 B 4.4 3. EMITTER 1.6 3 1.8 1.4 1.4 2.6 4.25 2.4 3.75 Features 0.8 MIN Power dissipation 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V

1.24. d882s.pdf Size:206K _lge

D882
D882

D882S Transistor(NPN) 1.EMITTER TO-92 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.

1.25. wtd772_wtd882.pdf Size:266K _wietron

D882
D882

WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors TO-252/D-PAK P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3 3. EMITTER 2 1 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/WTD772 Unit NPN/WTD882 Collector-E m itter Voltage V 3 0 Vdc CE O -3 0 Collector-B as e Voltage VCB O -4 0 4 0 Vdc E m itter-B as e Voltage VE B O -5 . 0 5 . 0 Vdc Collector Current (DC) IC(DC) -3 . 0 3 . 0

1.26. 2sb772_2sd882.pdf Size:687K _wietron

D882
D882

2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc Co

1.27. d882.pdf Size:475K _willas

D882
D882

FM120-M WILLAS THRU D882 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to opt mize b

1.28. hsd882.pdf Size:50K _hsmc

D882
D882

Spec. No. : HE6004 HI-SINCERITY Issued Date : 1998.03.15 Revised Date : 2005.08.15 MICROELECTRONICS CORP. Page No. : 1/5 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature

1.29. hsd882s.pdf Size:55K _hsmc

D882
D882

Spec. No. : HE6544 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/5 HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..........................................

1.30. btd882i3.pdf Size:225K _cystek

D882
D882

Spec. No. : C848I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date : 2010.11.05 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882I3 RCESAT 125mΩ typ. Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772I3 • RoHS compliant package Symb

1.31. btd882am3.pdf Size:246K _cystek

D882
D882

Spec. No. : C848M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772AM3 • Pb-free lead plating p

1.32. btd882sa3.pdf Size:302K _cystek

D882
D882

Spec. No. : C848A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date :2013.03.21 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772SA3 • Pb-free lead plating and h

1.33. btd882t3.pdf Size:320K _cystek

D882
D882

Spec. No. : C848T3-H Issued Date : 2002.08.18 CYStech Electronics Corp. Revised Date : 2014.03.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772T3 • Pb-free package Symbol Out

1.34. btd882j3.pdf Size:302K _cystek

D882
D882

Spec. No. : C848J3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date :2013.03.12 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125mΩ Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772J3 • Pb-free package Symbol Outli

1.35. btd882d3.pdf Size:177K _cystek

D882
D882

Spec. No. : C848D3-H Issued Date : 2005.05.04 CYStech Electronics Corp. Revised Date :2006.04.21 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD882D3 Features • Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA • Excellent current gain characteristics • Complementary to BTB772D3 • Pb-free package Symbol Outline BTD882D3 TO-126ML B

1.36. btd882st3.pdf Size:249K _cystek

D882
D882

Spec. No. : C858T3 Issued Date : 2011.06.28 CYStech Electronics Corp. Revised Date : Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150mΩ Features • Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772ST3 • Pb-free lead plating package Symbol Outline

1.37. d882_to-126.pdf Size:325K _can-sheng

D882
D882

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsulate Transistors TO-126 Plastic-Encapsula

1.38. d882.pdf Size:481K _can-sheng

D882
D882

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) TO-126 TO-126 TO-126 TO-126 FEATURES Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Units Symbol Parameter Value

1.39. d882-89_3a.pdf Size:185K _can-sheng

D882
D882

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com D882 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES Power dissipation 2. COLLECTOR MARKING: D882 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO

1.40. d882_to-252.pdf Size:330K _can-sheng

D882
D882

深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsulate Transistors TO-252 Plastic-Encapsula

1.41. 2sd882t.pdf Size:1094K _blue-rocket-elect

D882
D882

2SD882T(BR3DA882T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转

1.42. 2sd882l.pdf Size:617K _blue-rocket-elect

D882
D882

2SD882L(BR3DA882L) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转

1.43. 2sd882n.pdf Size:525K _blue-rocket-elect

D882
D882

2SD882N(BR3DA882N) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-223 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-223 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转

1.44. 2sd882i.pdf Size:804K _blue-rocket-elect

D882
D882

2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换

1.45. 2sd882d.pdf Size:536K _blue-rocket-elect

D882
D882

2SD882D(BR3DA882D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-252 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转换

1.46. 2sd882b.pdf Size:706K _blue-rocket-elect

D882
D882

2SD882B(BR3DA882BR) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package. 特征 / Features 饱和压降 V 小,h 高且线性极好。 CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. 用途 / Applications 用于 3 瓦音频放大输出,电压调节器,电源转

1.47. st2sd882u-p.pdf Size:297K _semtech

D882

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector

1.48. st2sd882u.pdf Size:535K _semtech

D882
D882

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 µs) ICP 7 A T

1.49. st2sd882t.pdf Size:386K _semtech

D882
D882

ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C

1.50. st2sd882ht.pdf Size:439K _semtech

D882
D882

ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C

1.51. l2sd882q.pdf Size:132K _lrc

D882
D882

LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25°C) BASE Parameter Symbol Limits Unit 3 Collector-bas

1.52. d882p.pdf Size:119K _jdsemi

D882
D882

R D882P 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.

1.53. d882pc.pdf Size:117K _jdsemi

D882
D882

R D882PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2. 2. 2.FEATURES 2.

1.54. d882pc_2.pdf Size:118K _jdsemi

D882
D882

R D882PC 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Charger、Emergency lamp and Electric toy control circuit 2 2. 2. 2.FEATURES 2

1.55. ftd882d.pdf Size:371K _first_silicon

D882
D882

SEMICONDUCTOR FTD882D TECHNICAL DATA FTD882D TRANSISTOR A I FEATURES C J Low Speed Switching DIM MILLIMETERS A 6 50 ± 0 2 B 5 60 ± 0 2 C 5 20 ± 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 ± 0 2 E 2 70 ± 0 2 F 2 30 ± 0 1 Symbol Parameter Value Unit H H 1 00 MAX I 2 30 ± 0 2 L F F VCBO Collector-Base Voltage 40 V J 0 5 ± 0 1 L 0 50 ± 0 10 1 2 3

1.56. ftd882.pdf Size:114K _first_silicon

D882
D882

SEMICONDUCTOR FTD882 TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING D E A FEATURES Complementary to FTB772. C F G DIM MILLIMETERS B A 8.3 MAX MAXIMUM RATING (Ta=25 ) B 11.3±0.3 C 4.15 TYP 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT D 3.2±0.2 E 2.0±0.2 H F 2.8±0.1 VCBO Collector-Base Voltage 40 V I G 3.2±0.1 H 1.27±0.1 VCEO K Collector-Emitter V

1.57. ftd882f.pdf Size:289K _first_silicon

D882
D882

SEMICONDUCTOR FTD882F TECHNICAL DATA A FTD882F NPN TRANSISTOR C H G FEATURES Power dissipation D D K F F DIM MILLIMETERS A 4.70 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 Symbol Parameter Value Unit E 4.25 MAX _ + F 1.50 0.10 VCBO Collector-Base Voltage 40 V G 0.40 TYP 1. BASE H 1.8 MAX 2. COLLE

1.58. 2sd882.pdf Size:1104K _kexin

D882
D882

SMD Type Transistors NPN Tr ansistors 2SD882 Features 1.70 0.1 Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector Current to Cont

1.59. 2sd882a.pdf Size:490K _kexin

D882

SMD Type Transistors NPN Tr ansistors 2SD882A 1.70 0.1 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current to Co

1.60. 2sd882-252.pdf Size:52K _kexin

D882

Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit: mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation: PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current: IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

1.61. d882-sot89.pdf Size:283K _shenzhen-tuofeng-semi

D882
D882

Shenzhen Tuofeng Semiconductor Technology Co., Ltd D882 SOT-89 SOT-89 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junct

1.62. d882.pdf Size:194K _shenzhen-tuofeng-semi

D882
D882

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-126 Plastic-Encapsulate Transistors TO-126 D882 TRANSISTOR ( NPN ) FEATURES Power dissipation 1. EMITTER PCM : 1.25 W ( Tamb=25℃ ) 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEB

Altri tipi di transistor... A44 , A733 , A92 , A94 , B772 , C1815 , C945 , CJF715 , 2N2222 , HM4033 , HM879 , KTA1668 , KTA2014 , KTD1898 , M28S , M8050 , M8550 .

 


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