2N6479 . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: 2N6479

Materiale principale: Si

Struttura: NPN

Potenza massima dissipabile (Pc): 87

Tensione tra collettore e base (Ucb): 100

Tensione tra collettore ed emettitore (Uce): 60

Tensione tra base ed emettitore (Ueb): 6

Massima corrente continuativa (Ic): 12

Temperatura di giunzione (Tj), °C: 200

Frequenza di transizione (ft): 100

Capacità di uscita (Cc), Pf: 400

Il guadagno di tensione in continua (hfe): 20

Pack: X21

Equivalente per i 2N6479

2N6479 - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

5.1. 2n647.pdf Size:511K _rca

5.2. 2n6473_2n6474_2n6475_2n6476.pdf Size:84K _central

5.3. 2n6477.pdf Size:345K _no

5.4. 2n6106_2n6107_2n6108_2n6109_2n6110_2n6111_2n6288_2n6289_2n6290_2n6291_2n6292_2n6293_2n6473_2n6474_2n6475_2n6476.pdf Size:101K _bocasemi

5.5. 2n6470.pdf Size:51K _inchange_semiconductor

ACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0 40 V VCER(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= 100? 50 V Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.3 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 3.5 V VCE(sat)-2 Base-Emitter On Voltage IC= 15A; VCE= 4V 3.5 V VBE(on) ICEO Collector Cutoff Current VCE= 20V; IB= 0 1.0 mA IC

5.6. 2n6470_2n6471_2n6472.pdf Size:130K _inchange_semiconductor

Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6470 40 VCEO(SUS) Collector-emitter 2N6471 IC=0.2A ;IB=0 60 V sustaining voltage 2N6472 80 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 3.5 V VBE Base-emitter on voltage IC=15A ; VCE=4V 3.5 V ICEO Collector cut-off current VCE=1

5.7. 2n6477_2n6478.pdf Size:120K _inchange_semiconductor

0 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT Ўж /W

5.8. 2n6475_2n6476.pdf Size:59K _inchange_semiconductor

oduct Specification Silicon PNP Power Transistors 2N6475 2N6476 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6475 -100 VCEO(SUS) Collector-emitter IC=-0.1A ;IB=0 V sustaining voltage 2N6476 -120 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A;IB=-0.15A -1.2 V VCEsat-2 Collector-emitter saturation voltage IC=-4A;IB=-2A -2.5 V VBE-1 Base-emitter on voltage IC=-1.5A ; VCE=-4V -2.0 V VBE-2 Base-emitter on voltage IC=-4A ;

5.9. 2n6473_2n6474.pdf Size:60K _inchange_semiconductor

N6473 2N6474 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6473 100 VCEO(SUS) Collector-emitter IC=0.1A ;IB=0 V sustaining voltage 2N6474 120 VCEsat-1 Collector-emitter saturation voltage IC=1.5A;IB=0.15A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=4A;IB=2A 2.5 V VBE-1 Base-emitter on voltage IC=1.5A ; VCE=4V 2.0 V VBE-2 Base-emitter on voltage IC=4A ; VCE=2.5V 3.5 V VCE=100V;VBE=-1.5V 0.1 2N6473 TC=100? 2.0

Altri tipi di transistor... 2N647-22 , 2N6473 , 2N6474 , 2N6475 , 2N6476 , 2N6477 , 2N6478 , 2N6478A , BF194 , 2N6480 , 2N6481 , 2N6482 , 2N6486 , 2N6487 , 2N6488 , 2N6489 , 2N649 .