2N700 Datasheet. Il Transistor Bipolare. Curve Caratteristiche

�C DEVICE MARKING 2N7002LT1 = 702 ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain�Source Breakdown Voltage V(BR)DSS 60 � � Vdc (VGS = 0, ID = 10 �Adc) Zero Gate Voltage Drain Current TJ = 25�C IDSS � � 1.0 �Adc (VGS = 0, VDS = 60 Vdc) TJ = 125�C � � 500 Gate�Body Leakage Current, Forward IGSSF � � 100 nAdc (VGS = 20 Vdc) Gate�Body Leakage Current, Reverse IGSSR � � �100 nAdc (VGS = �20 Vdc) 1. The Power

1.2. 2n7002lt1rev2.pdf Size:94K _motorola

1.3. 2n7000r3.pdf Size:77K _motorola

(BR)DSS 60 � Vdc (VGS = 0, ID = 10 �Adc) Zero Gate Voltage Drain Current IDSS (VDS = 48 Vdc, VGS = 0) � 1.0 �Adc (VDS = 48 Vdc, VGS = 0, TJ = 125�C) � 1.0 mAdc Gate�Body Leakage Current, Forward IGSSF � �10 nAdc (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage VGS(th) 0.8 3.0 Vdc (VDS = VGS, ID = 1.0 mAdc) Static Drain�Source On�Resistance rDS(on) Ohm (VGS = 10 Vdc, ID = 0.5 Adc) � 5.0 (VGS = 4.5 Vdc, ID = 75 mAdc) � 6.0 Drain�Source On�Voltage VDS(on) Vdc (VGS

1.4. 2n7002ka.pdf Size:87K _philips

ute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 °C ? Tj ? 150 °C - 60 V VDGR drain-gate voltage (DC) 25 °C ? Tj ? 150 °C; RGS =20k? -60 V VGS gate-source voltage - ±15 V VGSM peak gate-source voltage tp ? 50 µs; pulsed; duty cycle = 25 % - ±40 V ID drain current Tsp =25°C; VGS = 10 V; see Figure 2 and 3 - 320 mA Tsp = 100 °C; VGS = 10 V; see Figure 2 - 200 mA IDM peak drain current Tsp =25°C; pulsed; tp ? 10 µs; see F

1.5. 2n7002-03.pdf Size:276K _philips

current (DC) Tsp =25�C; VGS =10V - 300 mA Ptot total power dissipation Tsp =25�C - 0.83 W Tj junction temperature - 150 �C RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA 2.8 5 ? VGS = 4.5 V; ID = 75 mA 3.8 5.3 ? 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 �C - 60 V VDGR drain-gate voltage (DC) Tj =25to150 �C; RGS =20k?- 6

1.6. 2n7002ck.pdf Size:76K _philips

mbol 1 G gate D 3 2 S source 3 D drain G 12 S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002CK TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002CK LP* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 2N7002CK_1 � NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 � 11 S

1.7. 2n7002e.pdf Size:92K _philips

er Conditions Min Max Unit VDS drain-source voltage 25 �C ? Tj ? 150 �C - 60 V VDGR drain-gate voltage (DC) 25 �C ? Tj ? 150 �C; RGS =20k? -60 V VGS gate-source voltage - �30 V VGSM peak gate-source voltage tp ? 50 �s; pulsed; duty cycle = 25 % - �40 V ID drain current Tsp =25�C; VGS = 10 V; see Figure 2 and 3 - 385 mA Tsp = 100 �C; VGS = 10 V; see Figure 2 - 245 mA IDM peak drain current Tsp =25�C; pulsed; tp ? 10 �s; see Figure 3 - 1.5 A Ptot total power dissipation Tsp =25�C; see Figu

1.8. 2n7002pw.pdf Size:148K _philips

2. 2N7002PW NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT323 (SC-70) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PW SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002PW X8%

1.9. 2n7000-03.pdf Size:274K _philips

nt (DC) Tamb =25�C; VGS =10V - 300 mA Ptot total power dissipation Tamb =25�C - 0.83 W Tj junction temperature - 150 �C RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA 2.8 5 ? VGS = 4.5 V; ID = 75 mA 3.8 5.3 ? 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 �C - 60 V VDGR drain-gate voltage (DC) Tj =25to150 �C; RGS =20k?- 60 V

1.10. 2n7002ps.pdf Size:354K _philips

cm2. 2N7002PS NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1source1 6 5 4 D1 D2 2 G1 gate1 3D2drain2 4S2source2 1 2 3 5 G2 gate2 6D1drain1 S1 G1 S2 G2 msd901 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS SC-88 plastic surface-mounted package; 6 leads SOT363 4. Marking Table 4. Marking codes Type numbe

1.11. 2n7002.pdf Size:87K _philips

Conditions Min Max Unit VDS drain-source voltage 25 �C ? Tj ? 150 �C - 60 V VDGR drain-gate voltage (DC) 25 �C ? Tj ? 150 �C; RGS =20k? -60 V VGS gate-source voltage - �30 V VGSM peak gate-source voltage tp ? 50 �s; pulsed; duty cycle = 25 % - �40 V ID drain current Tsp =25�C; VGS = 10 V; see Figure 2 and 3 - 300 mA Tsp = 100 �C; VGS = 10 V; see Figure 2 - 190 mA IDM peak drain current Tsp =25�C; pulsed; tp ? 10 �s; see Figure 3 - 1.2 A Ptot total power dissipation Tsp =25�C; see Figure

1.12. 2n7002bkt.pdf Size:334K _philips

emiconductors 60 V, 290 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S 017aaa000 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKT SC-75 plastic surface-mounted package; 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKT Z3 5. Limiting values Table 5. Limiting values

1.13. 2n7002pt.pdf Size:306K _philips

P Semiconductors 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PT SC-75 plastic surface-mounted package; 3 leads SOT416 4. Marking Table 4. Marking codes Type number Marking code 2N7002PT Z1 5. Limiting values Table 5. Limiting values In

1.14. 2n7002p.pdf Size:311K _philips

2N7002P NXP Semiconductors 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT23 (TO-236AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] 2N7002P LW%

1.15. 2n7000_2n7002.pdf Size:626K _st

3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.16. 2n7000bu.pdf Size:85K _fairchild_semi

pecified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250?A 60 -- -- V VDS= VGS,ID=250?A 0.3 -- 3.9 VGS(th) Gate Threshold Voltage V VDS= VGS,ID=1mA 0.4 -- 2.2 Gate-Source Leakage , Forward VGS=15V -- -- 100 IGSS nA Gate-Source Leakage , Reverse VGS=-15V -- -- -100 VDS=60V -- -- 1 IDSS Drain-to-Source Leakage Current ?A VDS=45V,TC=125? -- -- 1000 Static Drain-Source VGS=10V,ID=0.5A RDS(on) -- -- 5.0 ? On-

1.17. 2n7002v-va.pdf Size:506K _fairchild_semi

ction to Ambient * 500 �C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size. � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002V/VA Rev. A1 1 2N7002V/VA � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10?A60 78 - V IDSS Zero Gate Voltage

1.18. 2n7000.pdf Size:94K _fairchild_semi

imum Ratings TA = 25�C unless otherwise noted 2N7000 2N7002 NDS7002A Symbol Parameter Units VDSS Drain-Source Voltage 60 V 60 V VDGR Drain-Gate Voltage (RGS < 1 M?) VGSS Gate-Source Voltage - Continuous V �20 - Non Repetitive (tp < 50�s) �40 ID Maximum Drain Current - Continuous 200 115 280 mA - Pulsed 500 800 1500 PD Maximum Power Dissipation 400 200 300 mW Derated above 25oC 3.2 1.6 2.4 mW/�C TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 �C TL Maximum Lea

1.19. 2n7002k.pdf Size:222K _fairchild_semi

esistance, Junction to Ambient * 350 �C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size � 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002K Rev. A3 1 2N7002K � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter Test Condition MIN MAX Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA 60 V IDSS Zero Gate Voltag

1.20. 2n7002w.pdf Size:291K _fairchild_semi

nch x 0.85 inch x 0.062 inch. Minimum land pad size. � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002W Rev. A1 1 2N7002W � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10uA 60 78 - V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V - 0.001 1.0 ?A VDS=60V, VGS=0V, @T

1.21. 2n7002mtf.pdf Size:115K _fairchild_semi

haracteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250�A VGS(th) Gate Threshold Voltage 1.2 - 2.5 V VDS = VGS, ID = 250�A Gate-Source Leakage, Forward - - 100 VGS = 20V IGSS nA Gate-Source Leakage, Reverse - - -100 VGS = -20V - - 1.0 VGS = 40V �A IDSS Drain-to-Source Leakage Current - - 500 VGS = 40V, TC = 125? A ID(ON) On-State Drain-Source Current 0.5 - - VDS = 10V, VGS = 10V Static Drain-Source - - 5.0 ? VGS = 10V, I

1.22. 2n7002dw.pdf Size:257K _fairchild_semi

ice mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimun land pad size, � 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002DW Rev. A 1 2N7002DW � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TC = 25�C unless otherwise noted Symbol Parameter Test Condition MIN TYP MAX Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10uA 60 78 - V IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V - 0.001

1.23. 2n7002kw.pdf Size:286K _fairchild_semi

ent * 410 �C/W * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size � 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002KW Rev. A0 1 2N7002KW � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA = 25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10?A60 V IDSS Zero Gate Voltage Drain Current VDS = 60V,

1.24. 2n7002t.pdf Size:332K _fairchild_semi

FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size, � 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N7002T Rev. A 1 2N7002T � N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TC = 25�C unless otherwise noted Symbol Parameter Test Condition MIN TYP MAX Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS= 0V, ID=10uA 60 78 - V IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS= 0V - 0.001 1.0 uA VDS= 6

1.25. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

1.26. 2n7000.pdf Size:443K _samsung

. Units Test Condition BVDSS VGS=0V,ID=250 A Drain-Source Breakdown Voltage 60 - - V VGS(th) Gate Threshold Voltage VDS=5V,ID=250 A V 0.3 - 3.9 VGS=15V Gate-Source Leakage , Forward - - 100 IGSS nA VGS=-15V Gate-Source Leakage , Reverse - - -100 VDS=30V - - 250 A IDSS Drain-to-Source Leakage Current VDS=30V,TC=125 - - 1000 Static Drain-Source - - RDS(on) 5.0 VGS=10V,ID=0.5A On-State Resistance - - gfs Forward Transconductance 0.1 0.3 - VDS=15V,ID=0.5A Ciss Input

1.27. 2n7002.pdf Size:439K _samsung

Max. Units Test Condition BVDSS VGS=0V,ID=250 A Drain-Source Breakdown Voltage 60 - - V VGS(th) Gate Threshold Voltage VDS=5V,ID=250 A V 1.0 - 2.5 VGS=20V Gate-Source Leakage , Forward - - 100 IGSS nA VGS=-20V Gate-Source Leakage , Reverse - - -100 VDS=40V - - 1.0 A IDSS Drain-to-Source Leakage Current VDS=40V,TC=125 - - 500 VDS=10V,VGS=10V 0.5 - - A ID(on) On-State Drain-Source Current - - Static Drain-Source RDS(on) 5.0 VGS=10V,ID=0.5A - - On-State Resistan

1.28. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

e ll = Lot Traceability Dual-In-Line D1 1 D4 14 TO-92-18RM S1 S4 N N 2 13 (TO-18 Lead Form) G1 3 G4 12 1 D NC NC 4 11 G2 5 G3 10 G 2 S2 S3 N N 6 9 D2 7 D3 S 8 3 Top View Top View Plastic: VQ1000J BS170 Sidebraze: VQ1000P Document Number: 70226 www.vishay.com S-04279�Rev. F, 16-Jul-01 11-1 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Single Total Quad VQ1000J VQ1000P VQ1000J/P Parameter Symbol

1.29. 2n7002e_1.pdf Size:174K _vishay

Voltage 60 V VGS Gate-Source Voltage � 20 TA = 25 �C 240 Continuous Drain Current (TJ = 150 �C) ID TA = 70 �C 190 mA IDM Pulsed Drain Currenta 1300 TA = 25 �C 0.35 PD Power Dissipation W TA = 70 �C 0.22 RthJA Thermal Resistance, Junction-to-Ambient 357 �C/W TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range �C Notes: a. Pulse width limited by maximum junction temperature. Document Number: 70860 www.vishay.com S11-0183-Rev. F, 07-Feb-11 1 2N7002E Vis

1.30. 2n7002k.pdf Size:210K _vishay

= 25 �C, unless otherwise noted Parameter Symbol Limit Unit VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage � 20 TA = 25 �C 300 ID Continuous Drain Current (TJ = 150 �C)b TA = 100 �C 190 mA IDM Pulsed Drain Currenta 800 TA = 25 �C 0.35 PD W Power Dissipationb TA = 100 �C 0.14 RthJA Maximum Junction-to-Ambientb 350 �C/W TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range �C Notes: a. Pulse width limited by maximum junction temperature. b. Surf

1.31. 2n7000kl_bs170kl.pdf Size:93K _vishay

in-Source Voltage VDS 60 V Gate-Source Voltage VGS � 20 TA = 25 �C 0.47 ID Continuous Drain Current (TJ = 150 �C)b TA = 70 �C 0.37 A IDM 1.0 Pulsed Drain Currenta TA = 25 �C 0.8 PD W Power Dissipation TA = 70 �C 0.51 RthJA 158 �C/W Maximum Junction-to-Ambient TJ, Tstg - 55 to 150 Operating Junction and Storage Temperature Range �C Notes: a. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Docume

1.32. 2n7002a.pdf Size:147K _diodes

VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage (Note 1) Continuous VGSS �20 V Drain Current (Note 1) Continuous 115 Continuous @ 100�C ID 73 mA Pulsed 800 Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation 250 mW PD Derating above TA = 25�C (Note 1) 1.6 mW/�C Thermal Resistance,

1.33. 2n7002k.pdf Size:161K _diodes

Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.`s �Green� Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com. Marking Information K7K = Product Type Marking Code YM = Date Code Marking K7K Y = Year (ex: T = 2006) M = Month (ex: 9 = September) Date Code Key Year 2006 2007 2008 2009 2010 2011 2012 Code T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov

1.34. 2n7002w.pdf Size:120K _diodes

Drain-Gate Voltage RGS ? 1.0M? VDGR 60 V Gain-Source Voltage Continuous �20 VGSS V Pulsed �40 Drain Current (Note 1) Continuous 115 Continuous @ 100�C ID 73 mA Pulsed 800 Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 1) 200 mW PD Derating above TA = 25�C 1.60 mW Thermal Resistance, Junction to Ambient 625 �C /W R?JA Operating and Storage Temperature Range TJ, TSTG -55 to +150 �C Note

1.35. 2n7002e.pdf Size:78K _diodes

urrent Continuous ID 240 mA Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient R?JA 417 �C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 �C Electrical Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage 60 70 V BVDSS ? VGS =

1.36. 2n7002dw.pdf Size:84K _diodes

tic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ? 1.0M? VDGR 60 V Gate-Source Voltage Continuous �20 VGSS V Pulsed �40 Drain Current (Note 1) Continuous 115 Continuous @ 100�C ID 73 mA Pulsed 800 Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation 200 mW PD Derating above TA = 25�C (Note 1) 1.60 mW/�C Thermal Resistance, Junction to Ambient 625 �C/W R?JA Operating and

1.37. 2n7002vc-vac.pdf Size:124K _diodes

@TA = 25�C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ? 1.0M? VDGR 60 V Gate-Source Voltage (Note 2) Continuous �20 VGSS V Pulsed �40 Drain Current (Note 2) Continuous ID 280 mA Drain Current (Note 2) Pulsed IDM 1.5 A Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation Pd 150 mW Thermal Resistance, Junction to Ambient 833 �C/W R?JA

1.38. 2n7002t.pdf Size:77K _diodes

Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ? 1.0M? VDGR 60 V Gate-Source Voltage Continuous �20 VGSS V Pulsed �40 Drain Current (Note 1) Continuous 115 Continuous @ 100�C 73 ID mA Pulsed 800 Thermal Characteristics @TA = 25�C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient 833 �C/W R?JA Operating and Storage Temperature Range Tj, TSTG -55 to +150 �C

1.39. 2n7002.pdf Size:86K _diodes

ed with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information K7x = Product Type Marking Code, e.g. K72 YM = Date Code Marking K7x Y = Year (ex: N = 2002) M = Month (ex: 9 = September) Date Code Key Year 1998 1999 2000 2001 2002

1.40. 2n7002w.pdf Size:182K _mcc

7 .055 1.20 1.40 F .012 .016 .30 .40 Drain-Gate Voltage RGS 1.0M? VDGR 60 V G .000 .004 .000 .100 H .035 .039 .90 1.00 J .004 .010 .100 .250 K .012 .016 .30 .40 Gate-Source-Voltage Continuous VGSS �20 V Suggested Solder Pulsed �40 Pad Layout 0.70 r Drain Current (Note 1) Continuous 115 Continuous @ 100 ID 73 mA 0.90 800 Pulsed 1.90 Total Power Dissipation (Note 1) mW 200 PD 1.60 mW/ Derating above TA =25 0.65 0.65 Note: 1. Valid provided that terminals are kept at

1.41. 2n7002.pdf Size:257K _mcc

hreshold Voltage 1.0 --- 2.5 Vdc (VDS=VGS, ID=250�Adc) IGSS Gate-body Leakage --- --- 100 nAdc G H J (VDS =0Vdc, VGS = 20Vdc) IDSS Zero Gate Voltage Drain Current K (VDS =60Vdc, VGS =0Vdc) --- --- 1 �Adc (VDS =60Vdc, VGS =0Vdc, Tj=125 ) --- --- 500 DIMENSIONS ID(ON) On-state Drain Current 500 2700 --- mAdc INCHES MM (VDS =7.5Vdc, VGS =10Vdc) DIM MIN MAX MIN MAX NOTE rDS(on) Drain-Source On-Resistance A .110 .120 2.80 3.04 (VGS=10Vdc, ID=500mAdc) --- 1.2 7.5 ? B .083 .0

1.42. 2n7000g.pdf Size:92K _onsemi

um Ratings may damage the device. Maximum 2N Ratings are stress ratings only. Functional operation above the Recommended 7000 Operating Conditions is not implied. Extended exposure to stresses above the AYWW G Recommended Operating Conditions may affect device reliability. G 1 3 Source Drain 2 Gate A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in th

1.43. 2n7002l.pdf Size:92K _onsemi

Derate above 25�C Thermal Resistance, Junction-to-Ambient RqJA 417 �C/W 702 = Device Code Junction and Storage Temperature TJ, Tstg - 55 to �C M = Date Code* +150 G = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended *Date Code orientation and/or position may Operating Conditions is not implied. Extended exposure to stresses above the

1.44. 2n7002e_2.pdf Size:95K _onsemi

�C G Temperature Range +150 SOT-23 1 2 CASE 318 Source Current (Body Diode) IS 300 mA STYLE 21 Gate Source Lead Temperature for Soldering Purposes TL 260 �C 703 = Device Code (1/8? from case for 10 s) M = Date Code Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb-Free Package Ratings are stress ratings only. Functional operation above the Recommended (Note: Microdot may be in either location) Operating Conditions is not implied. Extended exposure to stres

1.45. 2n7007.pdf Size:20K _supertex

ns where high breakdown Complementary N- and P-channel devices voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Package Options Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS S G D Drain-to-Gate Voltage BVDGS TO-92 Gate-to-Source Voltage �30V Operati

1.46. 2n7008.pdf Size:326K _supertex

ery low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching > Converters speeds are desired. > Amplifiers > Switches > Power supply circuits > Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information ID(ON) BVDSS/BVDGS RDS(ON) Device Package Option (max) (min) (V) (?) (mA) 2N7008-G TO-92 60 7.5 500 -G indicates package is RoHS compliant (�Green�) Absolute Maximum Ra

1.47. 2n7000.pdf Size:358K _secos

ad Temperature For Soldering Purposes, o C TL 300 1/16" From Case For 10 Seconds http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 A L 2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition _ _ V VGS=0V, ID=250uA Drain-Source Breakdown Voltage

1.48. s2n7002kw.pdf Size:536K _secos

Note: 1. Pw?10?S, Duty cycle?1% 2. When mounted on a 1x0.75x0.062 inch glass epoxy board ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified, per element) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION OFF CHARACTERISTICS 2 Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10?A Zero Gate Voltage Drain Current IDSS - - 1.0 ?A VDS=60V, VGS=0V Gate-Source Leakage IGSS - - ±10 ?A VDS=0V , VGS=±20V ON CHARACTERISTICS 2 Gate-Threshold Voltage VGS(TH) 1

1.49. 2n7002k.pdf Size:527K _secos

0.30 0.50 MARKING Drain ?? K72 ?? PACKAGE INFORMATION Gate Package MPQ Leader Size SOT-23 3K 7’ inch ?? Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit 60 Drain-Source Voltage VDS V ±20 Gate-Source Voltage VGS V 300 Continuous Drain Current ID mA 2000 Pulsed Drain Current 1 IDM mA 0.35 TA=25°C Maximum Power Dissipation PD W 0.21 TA=75°C Thermal Resistance Junction-Ambient (PCB mounted) 2 R?JA

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) VGSM ±40 Vpk THERMAL CHARACTERISTICS Total Device Dissipation TA=25°C 225 mW PD FR-5 Board 3 Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Junction and Storage Temperature TJ, TSTG -55~150 °C Note: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ?300µs, Duty Cycle ? 2.0% 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina ELECTRI

1.51. s2n7002dw.pdf Size:247K _secos

TSTG -55~150 °C Note: 1. Pulse Width Limited by Maximum Junction Temperature. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 1 of 3 S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0, ID=10?A Gate-Threshold V

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Pulsed Drain Current2 IDM ±800 Continuous Gate-Source Voltage VGS ±20 Vdc Non-repetitive Gate-Source Voltage(tP?50µs) VGSM ±40 Vpk THERMAL CHARACTERISTICS 225 Total Device Dissipation FR-5 Board3(TA=25°C) mW PD 1.8 Derating above 25°C mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Junction and Storage Temperature TJ, TSTG -55~150 °C Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse

1.53. 2n7002kw.pdf Size:527K _secos

Drain ?? PACKAGE INFORMATION ?? Package MPQ LeaderSize Gate SOT-323 3K 7’ inch ?? Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 115 mA Pulsed Drain Current 1 IDM 800 mA TA=25°C 200 Maximum Power Dissipation PD mW TA=75°C 120 Thermal Resistance Junction-Ambient (PCB mounted) 2 R?JA 625 °C / W Operating Junction and Storage

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Continuous Reverse Drain Current ID 115 mA Pulsed Reverse Drain Current IDRP1 800 mA Power Dissipation PD 225 mW Operating Junction & Storage Temperature Range TJ, TSTG -55~150 °C Note: 1. Pw?10?S, Duty cycle?1% 2. When mounted on a 1x0.75x0.062 inch glass epoxy board ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10?A Zero Gate

1.55. 2n7002t.pdf Size:283K _secos

ing Storage Temperature Range TSTG -55~150 °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. C Page 1 of 3 2N7002T 0.115A , 60V , RDS(ON) 7.2? N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS =0, ID =250?A Gate Threshold Voltage VGS(th

1.56. s2n7002k.pdf Size:1005K _secos

Total Power Dissipation PD2 225 mW Channel & Storage Temperature TCH, TSTG 150, -55~150 °C Note: 1. Pulse width ?10µS, Duty cycle?1%. 2. When mounted on 1x0.75x0.062 inch glass epoxy board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Gate-Source Leakage Current IGSS - - ±10 µA VGS=±20V, VDS=0V Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V, ID =10µA Zero Gate Voltage Drain Current IDSS - - 1 �

1.57. tsm2n7002_a07.pdf Size:127K _taiwansemi

1.58. tsm2n7002e_a07.pdf Size:143K _taiwansemi

1.59. tsm2n7000.pdf Size:85K _taiwansemi

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TIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10 A 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 100 nA IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -100 nA 2009. 11. 17 Revision No : 2 1/4 A J C L M 2N7000 ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note2) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Vth Gate Threshol

1.61. 2n7002ka.pdf Size:552K _kec

D Marking Lot No. Type Name 2P G S ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS A Drain-Source Breakdown Voltage VGS=0V, ID=10? 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 ? A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 10 ? A IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -10 ? A C=100pF, R=1.5K? ESD-Capability* - Both forward and reverse 2000 - - V direction 3 pulse *Failu

1.62. 2n7002a.pdf Size:51K _kec

DLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10 A 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 1 A IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -1 A 2009. 7. 2 Revision No : 7 1/4 D A G H N C J K 2N7002A ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 1) CHAR

1.63. 2n7002k.pdf Size:68K _kec

G Type Name WC S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10 A 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 10 A IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -10 A 2009. 11. 17 Revision No : 2 1/4 D A G H N C J K 2N7002K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 3

1.64. 2n7000k.pdf Size:67K _kec

down Voltage VGS=0V, ID=10 A 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 10 A IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -10 A 2009. 11. 17 Revision No : 1 1/4 A J C L M 2N7000K ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 2) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Vth Gate Threshold Voltage VDS=VGS, ID=250 A 1.1 - 2.35 V VGS=10V, ID=500mA - 1.2 1.8

1.65. 2n7000a.pdf Size:61K _kec

ACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS A Drain-Source Breakdown Voltage VGS=0V, ID=10? 60 - - V IDSS VDS=48V, VGS=0V Zero Gate Voltage Drain Current - - 1 ? A IGSSF VGS=15V, VDS=0V Gate-Body Leakage, Forward - - 1 ? A IGSSR VGS=-15V, VDS=0V Gate-Body Leakage, Reverse - - -1 ? A 2009. 11. 17 Revision No : 3 1/4 A J C L M 2N7000A ELECTRICAL CHARACTERISTICS (Ta=25?) ON CHARACTERISTICS (Note 1) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Vt

1.66. 2n7002.pdf Size:65K _kec

e Name WA S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=10 A 60 - - V IDSS VDS=60V, VGS=0V Zero Gate Voltage Drain Current - - 1 A IGSSF VGS=20V, VDS=0V Gate-Body Leakage, Forward - - 100 nA IGSSR VGS=-20V, VDS=0V Gate-Body Leakage, Reverse - - -100 nA 2009. 11. 17 Revision No : 4 1/4 D A G H N C J

1.67. 2n7000.pdf Size:239K _lge

rain-Source On-Resistance* rDS(0n) ? VGS=10V, ID=500mA 5 Forward Trans conductance* gfs VDS=10 V, ID=200mA 100 ms VGS=10V, ID=500mA 2.5 V Drain-source on-voltage* VDS(on) VGS=4.5V, ID=75mA 0.45 V Input Capacitance Ciss 60 Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 25 pF Reverse Transfer Capacitance CrSS 5 * pulse test. SWITCHING TIME td(on) VDD=15 V, RL=30? 10 Turn-on Time ID=500mA,VGEN=10 V ns td(off) 10 Turn-off Time RG=25 ? 2N7000 Mosfet (N-Channel) Typic

1.68. 2n7002w.pdf Size:241K _lge

On-Resistance rDS(0n) ? VGS=5 V, ID=50 mA 7.5 Forward Trans conductance gfs VDS=10 V, ID=200 mA 80 ms VGS=10 V, ID=500 mA 3.75 V Drain-source on-voltage VDS(on) VGS=5 V, ID=50 mA 0.375 V Diode Forward Voltage VSD IS=115 mA, VGS=0 V 1.2 V Input Capacitance Ciss 50 Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 25 pF Reverse Transfer Capacitance CrSS 5 SWITCHING TIME td(on) VDD=25 V, RL=50? 20 Turn-on Time ID=500mA,VGEN=10 V ns td(off) 40 Turn-off Time RG=25 ? 2N7002

1.69. 2n7002.pdf Size:224K _lge

? VGS=5 V, ID=50mA 1 7.5 Forward Trans conductance gfs VDS=10 V, ID=200mA 80 500 ms VGS=10V, ID=500mA 0.5 3.75 V Drain-source on-voltage VDS(on) VGS=5V, ID=50mA 0.05 0.375 V Diode Forward Voltage VSD IS=115mA, VGS=0 V 0.55 1.2 V Input Capacitance Ciss 50 Output Capacitance COSS VDS=25V, VGS=0V, f=1MHz 25 pF Reverse Transfer Capacitance CrSS 5 SWITCHING TIME td(on) VDD=25 V, RL=50? 20 Turn-on Time ID=500mA,VGEN=10 V ns td(off) 40 Turn-off Time RG=25 ? 2N7002 Mosfet

1.70. 2n7000.pdf Size:168K _wietron

S (th) 3.0 V 0.8 VDS=V , I =1.0 mA GS D Gate-body Leakage IGSS nA - -10 VDS=0V, VGS=15V Zero Gate Voltage Drain Current - VDS=48V, VGS=0V 1.0 IDSS uA - 1.0 VDS=48V, VGS=0V, Tj=125 C mA (2) On-State Drain Current ID (on) 75 - mA VGS=4.5V, VDS=10V ) Drain-Source On-Resistance (2 rDS (on) VGS=10V, ID=500mA - 5.0 ? VGS=4.5V, ID=75mA - 6.0 Forward Transconductance (2) gfs 100 - us VDS=10V, ID=200mA Drain-Source On-Voltage VSD(on) VGS=10V, ID=500mA - 2.5 V VGS=

1.71. 2n7002k.pdf Size:335K _wietron

S - - ±10 µA VGS=±20V, VDS=0V Drain-source breakdown voltage V (BR) DSS 60 - - V ID=10µA, VGS=0V Zero gate voltage drain current I - - 1 µA DSS =60V, V =0V VDS GS Gate threshold voltage VGS (th) 1 1.85 2.5 V VDS=VGS D=250uA , I Drain-source on-state resistance D=0.5A, VGS=10V I - - 7.5 * ? RDS (on) ID=0.05A, VGS=5V - - 7.5 Forward transfer admittance 80 - - mS l Yfs l* VDS=10V, ID=0.2A Input capacitance Ciss - 25 50 pF VDS=25V, VGS=0V, f=1MHz Output capacitance

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ate Voltage Drain Current IDSS - - 1.0 VDS=60V, VGS=0V @ Tc=25 C uA VDS=60V, VGS=0V @Tc=125 C - 500 - On-State Drain Current ID (on) - 0.5 1.0 A VGS=10V, VDS=7.5V Drain-Source On-Resistance RDS (on) VGS=5V, ID=0.05A @ Tj=25 C ? - 3.2 7.5 VGS=10V, ID=0.5A @ Tj =125 C 4.4 - 13.5 Forward Transconductance gfs - mS - 80 VDS=10V, ID=0.2A Dynamic Input Capacitance Ciss 22 50 - VDS=25V, VGS=0V, f=1MHZ Output Capacitance Coss 25 - 11 F P VDS=25V, VGS=0V, f=1MHZ

1.73. 2n7002dw.pdf Size:212K _wietron

in Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS 60 V - - VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 - 2.0 V VDS=VGS , I =250uA D Gate-body Leakage IGSS +1 _ µA - - + _ VGS= 20V, VDS=0V Zero Gate Voltage Drain Current IDSS - - VDS=60V, VGS=0V @ Tc=25 C 1.0 µA 500 VDS=60V, VGS=0V @Tc=125 C - - On-State Drain Current ID(on) - 0.5 - A VGS=10V, VDS?2.0VDS(ON) Drain-Source On-Resistance 0.375 VGS=5V, ID=0.05A VDS(on) V - - 3.75 VGS

1.74. 2n7002kdw.pdf Size:161K _wietron

tics @ TA=25 unless otherwise specified,per element Characteristic Symbol Min Typ MAX Unit OFF CHARACTERISTICS - - Drain-Source Breakdown Voltage VGS=0V, ID=10µA V(BR)DSS 60 V - Zero Gate Voltage Drain Current VDS=60V, VGS=0V IDSS - 1.0 µA - ±10 µA - Gate-source Leakage VGS=±20V, VDS=0V IGSS ON CHARACTERISTICS Gate Threshold Voltage VDS= VGS,ID = 250uA VGS(th) 1.0 1.85 2.5 V VGS=10V, ID =0.5A - - 7.5 Static Drain-Source On-Resistance RDS(ON) ? VGS=5V, ID=0.05A - - 7.5 Forwar

1.75. 2n7002t.pdf Size:287K _wietron

2 V VDS=VGS, ID=250µA Gate-body Leakage* - - IGSS ±10 nA VGS=±20V, VDS=0V Zero Gate Voltage Drain Current IDSS - - 1 µA VGS=0V, VDS=60V On-state Drain Current ID(ON) 500 1000 - mA VGS=10V, VDS=7.5V Drain-Source On-Resistance 2.0 7.5 VGS=5V, ID=50mA RDS(on) - ? VGS=10V, ID=500mA 4.4 13.5 Forward Tranconductance gfs ms - - 80 VDS=10V, ID=200mA Input Capacitance - C 22 50 iss VDS=25V, VGS=0V, f=1MHz Output Capacitance - pF C 11 25 oss VDS=25V, VGS=0V, f=1MHz

1.76. 2n7002.pdf Size:298K _wietron

to +150 °C Note : 1.The Power Dissipation of thepackage may result in a lower continuous drain current. 2.PulseTest: Pulse Width ? 300µs, Duty Cycle ? 2.0%. 3.FR-5 = 1.0 x 0.75 x 0.062 in. 4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Device Marking 2N7002 = 702 WEITRON Rev.B 08-Jul-09 1/4 http://www.weitron.com.tw 2N7002 (TA = 25° unless otherwise noted) C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltag

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http://www.weitron.com.tw 2N7002KT Electrical Characteristics (TA=25°C unless otherwise specified,per element) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS(Note2) Drain-Source Breakdown Voltage - - V (BR)DSS 60 V V =0V, I =10µA GS D Zero Gate Voltage Drain Current I µA DSS - - 1.0 V =60V, V =0V DS GS Gate-source Leakage µA ±10 I - - GSS V =±20V, V =0V GS DS ON CHARACTERISTICS(Note2) Gate Threshold Voltage V 1.0 1.5 2.0 V GS(th) V =V , I =250µ

Altri tipi di transistor... 2N698 , 2N6987 , 2N6988 , 2N699 , 2N699A , 2N699B , 2N699S , 2N70 , 2N5088 , 2N700-18 , 2N700A , 2N700A-18 , 2N701 , 2N702 , 2N703 , 2N705 , 2N705A .


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