2SB1140S . Il Transistor Bipolare. Curve Caratteristiche. Datasheet.

Tipo: 2SB1140S

Materiale principale: Si

Struttura: PNP

Potenza massima dissipabile (Pc): 10

Tensione tra collettore e base (Ucb): 25

Tensione tra collettore ed emettitore (Uce): 25

Tensione tra base ed emettitore (Ueb): 5

Massima corrente continuativa (Ic): 5

Temperatura di giunzione (Tj), °C: 150

Frequenza di transizione (ft): 320

Capacità di uscita (Cc), Pf: 60

Il guadagno di tensione in continua (hfe): 140

Pack: TO126

Equivalente per i 2SB1140S

2SB1140S - Potete trovare data sheet, manuali di istruzioni e altre informazioni per il vostro lavoro disponibili per il download in formato PDF

3.1. 2sb1140.pdf Size:102K _sanyo

VEB=–4V, IC=0 –500 nA DC Current Gain hFE1 VCE=–2V, IC=–500mA 100* 400* hFE2 VCE=–2V, IC=–4A 60 Gain-Bandwidth Product fT VCE=–5V, IC=–200mA 320 MHz Output Capacitance Cob VCB=–10V, f=1MHz 60 pF * : The 2SB1140 is classified by 500mA hFE as follows : 100 R 200 140 S 280 200 T 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s cont

4.1. 2sb1143.pdf Size:126K _sanyo

4.2. 2sb1143_2sd1683.pdf Size:60K _sanyo

tions Unit min typ max Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1 µA hFE1 VCE=(–)2V, IC=(–)100mA 100* 560* DC Current Gain hFE2 VCE=(–)2V, IC=(–)3A 40 Gain-Bandwidth Product fT VCE=(–)10V, IC=(–)50mA 150 MHz * ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows : Continued on next page. Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Any and all SANYO products described or contained herein do not have s

4.3. 2sb1141.pdf Size:117K _sanyo

4.4. 2sb1144.pdf Size:130K _sanyo

4.5. 2sb1142.pdf Size:129K _sanyo

4.6. 2sb1149.pdf Size:143K _nec

4.7. 2sb1148.pdf Size:59K _panasonic

150 ?C 1:Base 2:Collector 2.3± 0.2 Storage temperature Tstg –55 to +150 ?C 3:Emitter 4.6± 0.4 I Type Package (Y) Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SB1148 VCB = –40V, IE = 0 –50 ICBO µ A current 2SB1148A VCB = –50V, IE = 0 –50 Emitter cutoff current IEBO VEB = –5V, IC = 0 –50 µ A Collector to emitter 2SB1148 –20 VCEO IC = –10mA, IB = 0 V voltage 2SB1148A –40 hFE1 VCE = –2V, IC = – 0.1A 45 Forward current transfer

4.8. 2sb1149.pdf Size:122K _inchange_semiconductor

4.9. 2sb1145.pdf Size:115K _inchange_semiconductor

Altri tipi di transistor... 2SB1136 , 2SB1136Q , 2SB1136R , 2SB1136S , 2SB1137 , 2SB114 , 2SB1140 , 2SB1140R , BC147 , 2SB1140T , 2SB1141 , 2SB1141Q , 2SB1141R , 2SB1141S , 2SB1141T , 2SB1142 , 2SB1142R .