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2SB1206
. Il Transistor Bipolare. Curve Caratteristiche. Datasheet. Tipo: 2SB1206
Materiale principale: Si
Struttura: PNP
Potenza massima dissipabile (Pc): 0.3
Tensione tra collettore e base (Ucb): 30
Tensione tra collettore ed emettitore (Uce): 30
Tensione tra base ed emettitore (Ueb): 9
Massima corrente continuativa (Ic): 0.1
Temperatura di giunzione (Tj), Β°C: 160
Frequenza di transizione (ft):
CapacitΓ di uscita (Cc), Pf:
Il guadagno di tensione in continua (hfe): 150
Pack: U29-1
Equivalente per i 2SB1206
2SB1206
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4.1. 2sb1202.pdf  Size:128K _sanyo 4.2. 2sb1203.pdf Size:135K _sanyo 4.3. 2sb1205.pdf Size:50K _sanyo  |
 | ure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO produ |
4.4. 2sb1204.pdf Size:132K _sanyo 4.5. 2sb1201_2sd1801.pdf Size:111K _sanyo  |
 | rt systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
|
4.6. 2sb1202_2sd1802.pdf Size:58K _sanyo  |
 | upport systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or ot |
4.7. 2sb1203_2sd1803.pdf Size:111K _sanyo  |
 | y, such as life-support systems, aircrafts
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condi |
4.8. 2sb1201.pdf Size:123K _sanyo 4.9. 2sb1207.pdf Size:36K _panasonic  |
 | IE = 10΅ A, IC = 0 7 V
hFE*1 VCE = 2V, IC = 0.5A*2 130 350
Forward current transfer ratio
hFE2 VCE = 2V, IC = 1A*2 60
Collector to emitter saturation voltage VCE(sat) IC = 0.4A, IB = 8mA 0.16 0.3 V
Base to emitter saturation voltage VBE(sat) IC = 0.4A, IB = 8mA 0.8 1.2 V
Transition frequency fT VCB = 10V, IE = 50mA, f = 200MHz 130 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 22 pF
*2
Pulse measurement
*1
hFE1 Rank classification
Rank R S
hFE1 |
4.10. 2sb1207_e.pdf Size:40K _panasonic  |
 | IE = 10΅ A, IC = 0 7 V
hFE*1 VCE = 2V, IC = 0.5A*2 130 350
Forward current transfer ratio
hFE2 VCE = 2V, IC = 1A*2 60
Collector to emitter saturation voltage VCE(sat) IC = 0.4A, IB = 8mA 0.16 0.3 V
Base to emitter saturation voltage VBE(sat) IC = 0.4A, IB = 8mA 0.8 1.2 V
Transition frequency fT VCB = 10V, IE = 50mA, f = 200MHz 130 MHz
Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 22 pF
*2
Pulse measurement
*1
hFE1 Rank classification
Rank R S
hFE1 |
4.11. 2sb1209.pdf Size:38K _panasonic  |
 | 0΅ A, IE = 0 400 V
Collector to emitter voltage VCEO IC = 500΅ A, IB = 0 400 V
Emitter to base voltage VEBO IE = 100΅ A, IC = 0 5 V
Forward current transfer ratio hFE VCE = 5V, IC = 30mA 40
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.6 V
Base to emitter saturation voltage VBE(sat) IC = 50mA, IB = 5mA 1.5 V
Transition frequency fT VCB = 30V, IE = 20mA, f = 200MHz 50 MHz
Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 9 pF
1
1.0
1.0 |
4.12. 2sb1209_e.pdf Size:42K _panasonic  |
 | 0΅ A, IE = 0 400 V
Collector to emitter voltage VCEO IC = 500΅ A, IB = 0 400 V
Emitter to base voltage VEBO IE = 100΅ A, IC = 0 5 V
Forward current transfer ratio hFE VCE = 5V, IC = 30mA 40
Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.6 V
Base to emitter saturation voltage VBE(sat) IC = 50mA, IB = 5mA 1.5 V
Transition frequency fT VCB = 30V, IE = 20mA, f = 200MHz 50 MHz
Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 9 pF
1
1.0
1.0 |
4.13. 2sb1202.pdf Size:218K _lge  |
 |
VCB=-40V, IE=0 -1 ΠΒ΅A
Emitter cut-off current IEBO
VEB=-4V, IC=0 -1 ΠΒ΅A
hFE(1)
VCE=-2V, IC=-100mA 100 560
DC current gain
hFE(2)
VCE=-2V, IC=-3A 35
Collector-emitter saturation voltage VCE(sat) V
IC=-2A, IB=-100mA -0.7
MHz
Transition frequency f VCE=-10V, IC=-50mA 150
T
Collector output capacitance Cob pF
VCB=-10V, IE=0, f=1MHz 39
CLASSIFICATION OF hFE(1)
R S T U
Rank
100-200 140-280 200-400 280-560
Range
2SB1202(PNP)
TO-251/TO-252-2L Transistor
Typi |
Altri tipi di transistor... 2SB1204Q
, 2SB1204R
, 2SB1204S
, 2SB1204T
, 2SB1205
, 2SB1205R
, 2SB1205S
, 2SB1205T
, 2N2907
, 2SB1207
, 2SB1208
, 2SB1209
, 2SB121
, 2SB1210
, 2SB1211
, 2SB1212
, 2SB1213
.
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