MOSFET|データシート

 

IRF540 データシート。MOSFET。製品仕様。

品 名: IRF540

MOSFET 的 种 类: MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 150

ド レ イ ン ・ ソ ー ス 電 圧 (Uds): 100

ゲ ー ト ・ ソ ー ス 電 圧 (Ugs): 20

ド レ イ ン 電 流 (直 流) (Id): 30

チ ャ ネ ル 部 温 度 (Tj), °C: 175

立 上 り 時 間 (tr):

出 力 容 量 (Cd), pf: 2100

直 流 オ ン 抵 抗 (Rds), Ohm: 0.077

パ ッ ケ ー ジ : TO220

IRF540 同等品。仕様

IRF540 PDF doc:

1.1. irf540_mot.pdf Size:144K _motorola

IRF540
IRF540

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Advance Information IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource d

1.2. irf540.rev3.2.pdf Size:142K _motorola

IRF540
IRF540

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF540/D Product Preview IRF540 TMOS E-FET.? Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 27 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a draintosource diode

1.3. irf540_s_1.pdf Size:88K _philips

IRF540
IRF540

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF540, IRF540S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 23 A g RDS(ON) ? 77 m? s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using trench technolo

1.4. irf540.pdf Size:53K _st

IRF540
IRF540

IRF540 IRF540FI N - CHANNEL100V - 00.50? - 30A - TO-220/TO-220FI POWER MOSFET TYPE VDSS RDS(on) ID IRF540 100 V < 0.077 ? 30 A IRF540FI 100 V < 0.077 ? 16 A TYPICAL R = 0.050 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHAR

1.5. irf540-1-2-3-fi.pdf Size:481K _st2

IRF540
IRF540

1.6. irf540a.pdf Size:256K _fairchild_semi

IRF540
IRF540

IRF540A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

1.7. irf540.pdf Size:146K _fairchild_semi

IRF540
IRF540

1.8. irf540_rf1s540sm.pdf Size:112K _fairchild_semi

IRF540
IRF540

IRF540, RF1S540SM Data Sheet January 2002 28A, 100V, 0.077 Ohm, N-Channel Power Features MOSFETs • 28A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.077Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avala

1.9. irf540ns.pdf Size:125K _international_rectifier

IRF540
IRF540

PD - 91342 IRF540NS IRF540NL Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 100V Fast Switching Fully Avalanche Rated RDS(on) = 44m? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing ID = 33A S techniques to achieve extremely low on-resistanc

1.10. irf540s.pdf Size:184K _international_rectifier

IRF540
IRF540

1.11. irf540pbf.pdf Size:1312K _international_rectifier

IRF540
IRF540

PD - 94848 IRF540PbF Lead-Free 11/17/03 Document Number: 91021 www.vishay.com 1 IRF540PbF Document Number: 91021 www.vishay.com 2 IRF540PbF Document Number: 91021 www.vishay.com 3 IRF540PbF Document Number: 91021 www.vishay.com 4 IRF540PbF Document Number: 91021 www.vishay.com 5 IRF540PbF Document Number: 91021 www.vishay.com 6 IRF540PbF TO-220AB Package Outline Dime

1.12. irf540n.pdf Size:99K _international_rectifier

IRF540
IRF540

PD - 91341B IRF540N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 44m? G Fast Switching Fully Avalanche Rated ID = 33A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.13. irf540spbf.pdf Size:1411K _international_rectifier

IRF540
IRF540

PD- 95983 IRF540SPbF Lead-Free 12/21/04 Document Number: 91022 www.vishay.com 1 IRF540SPbF Document Number: 91022 www.vishay.com 2 IRF540SPbF Document Number: 91022 www.vishay.com 3 IRF540SPbF Document Number: 91022 www.vishay.com 4 IRF540SPbF Document Number: 91022 www.vishay.com 5 IRF540SPbF Document Number: 91022 www.vishay.com 6 IRF540SPbF Peak Diode Recovery dv/d

1.14. irf540z.pdf Size:173K _international_rectifier

IRF540
IRF540

PD - 94644 IRF540Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 29.5m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 34A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the lates

1.15. irf540.pdf Size:177K _international_rectifier

IRF540
IRF540

1.16. irf540a.pdf Size:951K _samsung

IRF540
IRF540

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.052 Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.17. irf540_sihf540.pdf Size:202K _vishay

IRF540
IRF540

IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.077 RoHS* 175 C Operating Temperature Qg (Max.) (nC) 72 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive

1.18. irf540ns.pdf Size:2432K _kexin

IRF540
IRF540

SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) TO-263 Unit:mm 9.65 (Min) 10.67 (Max) ■ Features 5.33 (Min) ● VDS (V) = 100V 90 ~ 93 ● ID = 33 A (VGS = 10V) ● RDS(ON) < 44mΩ (VGS = 10V) 6.22 (min) ● Fast Switching 4.06 (Min) 4.83 (Max) 1.14 (Min) 1.40 (Max) 1.65 (max) D 1.27~1.78 1.14~1.40 0.43~0.63 G 1 Gate 0.51~0.99 2 Drain 2.54 3 Sour

データーシート... IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS , IRF531 , IRF532 , IRF533 , RFP50N06 , IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 .

 


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