MOSFET|データシート

 

RFP50N06 データシート。MOSFET。製品仕様。

品 名: RFP50N06

MOSFET 的 种 类: MOSFET

MOSFET 種 類: N

許 容 損 失 (Pd): 131

ド レ イ ン ・ ソ ー ス 電 圧 (Uds): 60

ゲ ー ト ・ ソ ー ス 電 圧 (Ugs):

ド レ イ ン 電 流 (直 流) (Id): 50

チ ャ ネ ル 部 温 度 (Tj), °C: 150

立 上 り 時 間 (tr):

出 力 容 量 (Cd), pf:

直 流 オ ン 抵 抗 (Rds), Ohm: 0.022

パ ッ ケ ー ジ : TO220AB

RFP50N06 同等品。仕様

RFP50N06 PDF doc:

1.1. rfg50n06_rfp50n06_rf1s50n06sm.pdf Size:373K _fairchild_semi

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.022Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

1.2. rfg50n06le_rfp50n06le_rf1s50n06lesm.pdf Size:154K _intersil

RFP50N06
RFP50N06

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs • 50A, 60V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.022Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approa

1.3. rfp50n06.pdf Size:74K _intersil

RFP50N06
RFP50N06

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022? the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

データーシート... RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , SPA11N60C3 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E .

 


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