バイポーラトランジスタデータシート

 

2N4401 バイポーラトランジスタ

品名: 2N4401

材料: Si

種類: NPN

コレクタ損失 (Pc): 0.31 W

コレクタ·ベース間電圧 (Vcb): 60 V

コレクタ·エミッタ間電圧 (Vce): 40 V

エミッタ·ベース間電圧 (Veb): 6 V

コレクタ電流(直流) (Ic): 0.6 A

接合温度 (Tj): 135 °C

トランジション周波数(fT): 250 MHz

コレクタ出力容量 (Cob): 7 pF

直流電流増幅率 (hfe): 100

パッケージ: TO92

2N4401 同 等 品。 仕 様

2N4401 Datasheet PDF:

1.1. 2n4400_2n4401.pdf Size:303K _motorola

2N4401
2N4401

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4400/D General Purpose Transistors 2N4400 NPN Silicon * 2N4401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc C

1.2. 2n4401_3.pdf Size:52K _philips

2N4401
2N4401

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industrial and c

1.3. 2n4401_mmbt4401.pdf Size:92K _fairchild_semi

2N4401
2N4401

2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V I

1.4. 2n4400-2n4401.pdf Size:48K _samsung

2N4401
2N4401

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW

1.5. umt4401_sst4401_mmst4401_2n4401.pdf Size:91K _rohm

2N4401
2N4401

UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features 2.00.2 UMT4401 1.30.1 0.90.1 1) BVCEO>40V (IC=1mA) 0.65 0.65 0.2 0.70.1 (1) (2) 2) Complements the UMT4403 / SST4403 / MMST4403 0~0.1 / PN4403. (3) (1) Emitter (2) Base 0.3+0.1 0.150.05 ROHM : UMT3 -0

1.6. 2n4400_2n4401.pdf Size:63K _central

2N4401

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n4401.pdf Size:212K _mcc

2N4401
2N4401

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N4401 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power Dissipation Purpose Amplifier Through Hole Package Epoxy meets UL 94 V-0

1.8. 2n4401-d.pdf Size:195K _onsemi

2N4401
2N4401

2N4401 General Purpose Transistors NPN Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25C 625 mW

1.9. 2n4401.pdf Size:207K _utc

2N4401
2N4401

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401L Halogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T92-B

1.10. 2n4401.pdf Size:274K _auk

2N4401
2N4401

2N4401 NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application C Features B • Low Leakage current • Low collector saturation voltage enabling E low voltage operation • Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum ratings Ta=2

1.11. 2n4401.pdf Size:320K _secos

2N4401
2N4401

2N4401 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 Features Power Dissipation o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage V

1.12. 2n4401.pdf Size:398K _lge

2N4401
2N4401

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mA Collector Power dissipation PC 0.625 W TJ

1.13. 2n4401.pdf Size:1006K _wietron

2N4401
2N4401

2N4401 General Purpose Transistors NPN Silicon TO-92 FEATURES 1 1. EMITTER 2 Power dissipation 3 2. BASE PCM : 0.625 W (Tamb=25?) 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJ,Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Sym

1.14. h2n4401.pdf Size:53K _hsmc

2N4401
2N4401

Spec. No. : HE6215 HI-SINCERITY Issued Date : 1992.09.22 Revised Date : 2002.02.22 MICROELECTRONICS CORP. Page No. : 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 • Complementary to H2N4403 • High Power Dissipation: 625 mW at 25°C • High DC Current Gain: 100-300 at 150mA

1.15. 2n4401a3.pdf Size:263K _cystek

2N4401
2N4401

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp. Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description • The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High current , I = 0.6A C • Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

1.16. 2n4401.pdf Size:317K _first_silicon

2N4401
2N4401

SEMICONDUCTOR 2N4401 TECHNICAL DATA General Purpose Transistor ORDERING INFORMATION Device Marking Shipping 3 2N4401 2X 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT–23 Rating Symbol Value Unit Collector–Emitter Voltage V 40 Vdc CEO Collector–Base Voltage V 60 Vdc CBO Emitter–Base Voltage V 6.0 Vdc EBO 3 COLLECTOR Collector Current — Continuous I 600 mAdc C 1 BASE

1.17. 2n4401.pdf Size:1500K _kexin

2N4401
2N4401

SMD Type Transistors NPN Transistors 2N4401 TO-92 Unit: mm +0.25 4.58 –0.15 ■ Features ●Collector Current Capability IC=0.6A ●Collector Emitter Voltage VCEO=40V 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 –0.05 1 2 3 [1.27 0.20] [1.27 0.20] 3.60 0.20 1. Emitter 2. Base (R2.29) 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

データーシート ... 2N4397 , 2N4398 , 2N4399 , 2N439A , 2N43A , 2N44 , 2N440 , 2N4400 , 9014 , 2N4402 , 2N4403 , 2N4404 , 2N4405 , 2N4406 , 2N4407 , 2N4409 , 2N440A .

 


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