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2SC5200 トランジスタデータシート

品名: 2SC5200

材料: Si

種類: NPN

コレクタ損失 (Pc): 150

コレクタ·ベース間電圧 (Ucb): 250

コレクタ·エミッタ間電圧 (Uce): 250

エミッタ·ベース間電圧 (Ueb): 5

コレクタ電流(直流) (Ic): 17

接合部温度 (Tj):

利得帯域幅積 (ft):

出力容量 (Cc), pF:

直流電流増幅率 (hfe): 55

パッケージ: TO264

2SC5200 同 等 品。 仕 様

2SC5200 PDF:

1.1. 2sc5200.pdf Size:148K _st

2SC5200
2SC5200

2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviou

1.2. 2sc5200.pdf Size:121K _toshiba

2SC5200
2SC5200

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO

1.3. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

2SC5200
2SC5200

January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.4. 2sc5200.pdf Size:171K _utc

2SC5200
2SC5200

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS ? FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube www.uniso

1.5. 2sc5200.pdf Size:276K _inchange_semiconductor

2SC5200
2SC5200

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage application

データーシート ... ZXTP2029F , ZXTP2039F , ZXTP25060BFH , ZXTP25100BFH , ZXTP25100CFH , ZXTP25100CZ , ZXTP722MA , 2SA1943 , BC237 , BDW94CF , FJA13009 , FJA4210 , FJA4213 , FJA4310 , FJA4313 , FJB102 , FJB3307D .

 


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