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CXT5401E トランジスタデータシート

品名: CXT5401E

材料: Si

種類: PNP

コレクタ損失 (Pc): 1.2

コレクタ·ベース間電圧 (Ucb): 250

コレクタ·エミッタ間電圧 (Uce): 220

エミッタ·ベース間電圧 (Ueb): 7

コレクタ電流(直流) (Ic): 0.6

接合部温度 (Tj): 150

利得帯域幅積 (ft): 100

出力容量 (Cc), pF: 6

直流電流増幅率 (hfe): 100

パッケージ: SOT89

CXT5401E 同 等 品。 仕 様

CXT5401E PDF:

1.1. cxt5401e.pdf Size:290K _central

CXT5401E
CXT5401E

CXT5401E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage: 250V SOT-89 CASE • Low L

3.1. cxt5401.pdf Size:608K _htsemi

CXT5401E
CXT5401E

CXT5401 TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO

3.2. cxt5401.pdf Size:1165K _kexin

CXT5401E
CXT5401E

SMD Type Transistors PNP Transistors CXT5401 (KXT5401) ■ Features 1.70 0.1 ● Switching and amplification in high voltage Applications such as telephony ● Low current(max. 500mA) ● High voltage(max.160v) 0.42 0.1 0.46 0.1 ● Comlementary to CXT5551 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base V

データーシート ... CS684 , CSA1162 , CSC2712 , CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , S9018 , CXT5551E , CXT5551HC , CXT591E , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D .

 


CXT5401E
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CXT5401E
  CXT5401E
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