MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF400N80Z
FCPF600N60Z ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA905P
FDMA908PZ ..FDMS8570SDC
FDMS86101 ..FDPF20N50FT
FDPF20N50T ..FDT86256
FDU3N40 ..FQD17P06
FQD18N20V2 ..FQU11P06
FQU12N20 ..FSF9150D
FSF9150R ..H7N0307AB
H7N0307LD ..HAT2170N
HAT2171H ..HUF76107D3S
HUF76107P3 ..IPB097N08N3G
IPB100N04S2-04 ..IPD50N06S2L-14
IPD50N06S4-09 ..IPP04CN10NG
IPP04N03LBG ..IPW60R190E6
IPW60R199CP ..IRF3707ZS
IRF3708 ..IRF6674
IRF6678 ..IRF7663
IRF7665S2 ..IRF9Z30
IRF9Z32 ..IRFHM830D
IRFHM831 ..IRFP264
IRFP2907 ..IRFR9214
IRFR9220 ..IRFS9622
IRFS9623 ..IRFY9240
IRFY9240C ..IRLI630A
IRLI630G ..IRLZ44NL
IRLZ44NS ..IXFH32N50Q
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTH76P10T ..IXTP3N60P
IXTP42N15T ..IXTT96N15P
IXTT96N20P ..KF5N50DZ
KF5N50F ..KP509B9
KP509V9 ..MEM610
MEM614 ..MTC380Q8
MTC4501Q8 ..MTN4410V8
MTN4424Q8 ..NDB7051L
NDB7052 ..NTD5865N
NTD5865NL ..NX3008NBK
NX3008NBKS ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFF60P06
RFF70N06 ..RJK1212DNS
RJK1212DPA ..RSF015N06
RSH065N06 ..SDF220
SDF230JAA ..SFW9510
SFW9520 ..SMK0460F
SMK0460I ..SML601R3CN
SML601R3GN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB6N52K3
STB6NK60Z ..STD60NF55L-1
STD60NF55LA ..STG8205
STG8209 ..STM4433A
STM4435 ..STP21N05LFI
STP21N06L ..STP6NK90Z
STP70L60 ..STT3520C
STT3585 ..STW12N60
STW12NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
BUK9507-30B All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUK9507-30B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9507-30B

Type of BUK9507-30B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 157

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of BUK9507-30B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: TO220AB

Equivalent transistors for BUK9507-30B

BUK9507-30B PDF doc:

1.1. buk9507-30b_buk9607-30b.pdf Size:300K _philips

BUK9507-30B
BUK9507-30B
BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 327 mJ RDSon = 5.9 m? (typ) ID ? 75 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make

4.1. buk9505-30a.pdf Size:987K _philips

BUK9507-30B
BUK9507-30B
BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 30 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 230 W Static characteristics RDSon drain-source on-state VGS =5V; ID =25A; - 4.3 5 m? resistance Tj =25°C VGS =10V; ID =25A; - 3.9 4.6 m? Tj =25°C Avalanche ruggedness EDS(AL)S non-repetitive ID =75A; Vs

4.2. buk9508_buk9608-55a_2.pdf Size:78K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 200 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 8 m? applications. VGS = 10 V 7.3 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Dra

4.3. buk9506-30_1.pdf Size:48K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 6 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±

4.4. buk9508-55_2.pdf Size:52K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 8 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±

4.5. buk9505-30a_2.pdf Size:50K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is intended for Ptot Total power dissipation 230 W use in automotive and general Tj Junction temperature 175 ?C purpose switching applications. RDS(ON) Drain-source on-state resistance VGS = 5 V 5 m? VGS = 10 V 4.6 m? PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±VGS Gate-source voltage - - 10 V ±VGSM Non-repet

4.6. buk9506-75b_buk9606-75b.pdf Size:333K _philips

BUK9507-30B
BUK9507-30B
BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V, and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 852 mJ RDSon = 5.2 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to s MBB076 drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

4.7. buk9504-40a_buk9604-40a_buk9e04-40a.pdf Size:358K _philips

BUK9507-30B
BUK9507-30B
BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] mb 2 drain (d) 3 source (s) d mb mounting base, connected to g drain (d) 2 s MBB076 1 3 MBK116 1 2 3 MBK112 MBK106 1 2 3 SOT226 (I2-PAK) SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 packa

4.8. buk9509-55a_buk9609-55a.pdf Size:313K _philips

BUK9507-30B
BUK9507-30B
BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] 2 drain (d) mb 3 source (s) d mb mounting base; connected to drain (d) g s MBB076 2 13 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9609-55A Philips Semiconductors TrenchMOS™ logic leve

4.9. buk9508-55a_buk9608-55a.pdf Size:328K _philips

BUK9507-30B
BUK9507-30B
BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d mb [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9608-55A Philips Semiconductors TrenchMOS™ logic level F

4.10. buk9509_buk9609_75a-02.pdf Size:326K _philips

BUK9507-30B
BUK9507-30B
BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9509-75A; BUK9609-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Tab

4.11. buk9506_buk9606-55a_2.pdf Size:66K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 230 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 6.3 m? applications. VGS = 10 V 5.8 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR D

See also transistors datasheet: BUK9245-55A , BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , IRF540N , BUK9508-55B , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A .

Keywords

 BUK9507-30B Datasheet  BUK9507-30B Datenblatt  BUK9507-30B RoHS  BUK9507-30B Distributor
 BUK9507-30B Application Notes  BUK9507-30B Component  BUK9507-30B Circuit  BUK9507-30B Schematic
 BUK9507-30B Equivalent  BUK9507-30B Cross Reference  BUK9507-30B Data Sheet  BUK9507-30B Fiche Technique

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