MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VMO580-02F
VMO60-05F ..ZXMN6A07F
ZXMN6A07Z ..ZXMS6006SG
 
BUK9507-30B All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUK9507-30B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9507-30B

Type of BUK9507-30B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 157

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of BUK9507-30B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: TO220AB

Equivalent transistors for BUK9507-30B

BUK9507-30B PDF doc:

1.1. buk9507-30b_buk9607-30b.pdf Size:300K _philips

BUK9507-30B
BUK9507-30B
BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 327 mJ RDSon = 5.9 m? (typ) ID ? 75 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make

4.1. buk9506_buk9606-55a_2.pdf Size:66K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 230 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 6.3 m? applications. VGS = 10 V 5.8 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR D

4.2. buk9505-30a_2.pdf Size:50K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is intended for Ptot Total power dissipation 230 W use in automotive and general Tj Junction temperature 175 ?C purpose switching applications. RDS(ON) Drain-source on-state resistance VGS = 5 V 5 m? VGS = 10 V 4.6 m? PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±VGS Gate-source voltage - - 10 V ±VGSM Non-repet

4.3. buk9508-55a_buk9608-55a.pdf Size:328K _philips

BUK9507-30B
BUK9507-30B
BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d mb [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9608-55A Philips Semiconductors TrenchMOS™ logic level F

4.4. buk9508-55_2.pdf Size:52K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 8 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±

4.5. buk9506-30_1.pdf Size:48K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 6 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±

4.6. buk9505-30a.pdf Size:987K _philips

BUK9507-30B
BUK9507-30B
BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 30 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 230 W Static characteristics RDSon drain-source on-state VGS =5V; ID =25A; - 4.3 5 m? resistance Tj =25°C VGS =10V; ID =25A; - 3.9 4.6 m? Tj =25°C Avalanche ruggedness EDS(AL)S non-repetitive ID =75A; Vs

4.7. buk9504-40a_buk9604-40a_buk9e04-40a.pdf Size:358K _philips

BUK9507-30B
BUK9507-30B
BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] mb 2 drain (d) 3 source (s) d mb mounting base, connected to g drain (d) 2 s MBB076 1 3 MBK116 1 2 3 MBK112 MBK106 1 2 3 SOT226 (I2-PAK) SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 packa

4.8. buk9506-75b_buk9606-75b.pdf Size:333K _philips

BUK9507-30B
BUK9507-30B
BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V, and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 852 mJ RDSon = 5.2 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to s MBB076 drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

4.9. buk9509_buk9609_75a-02.pdf Size:326K _philips

BUK9507-30B
BUK9507-30B
BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9509-75A; BUK9609-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Tab

4.10. buk9508_buk9608-55a_2.pdf Size:78K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 200 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 8 m? applications. VGS = 10 V 7.3 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Dra

4.11. buk9509-55a_buk9609-55a.pdf Size:313K _philips

BUK9507-30B
BUK9507-30B
BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] 2 drain (d) mb 3 source (s) d mb mounting base; connected to drain (d) g s MBB076 2 13 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9609-55A Philips Semiconductors TrenchMOS™ logic leve

See also transistors datasheet: BUK9245-55A , BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , IRF540N , BUK9508-55B , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A .

Keywords

 BUK9507-30B Datasheet  BUK9507-30B Datenblatt  BUK9507-30B RoHS  BUK9507-30B Distributor
 BUK9507-30B Application Notes  BUK9507-30B Component  BUK9507-30B Circuit  BUK9507-30B Schematic
 BUK9507-30B Equivalent  BUK9507-30B Cross Reference  BUK9507-30B Data Sheet  BUK9507-30B Fiche Technique

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