MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB047N10
FDB050AN06A0 ..FDD6688
FDD6690A ..FDMS2734
FDMS3500 ..FDPF15N65
FDPF16N50 ..FDT86102LZ
FDT86106LZ ..FQD17P06
FQD18N20V2 ..FQU1N60C
FQU1N80 ..FSJ055R
FSJ160D ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75645P3
HUF75645S3S ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC1016S6R
MTC2402Q8 ..MTN3N60I3
MTN3N60J3 ..NDB6060
NDB6060L ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF15N60GAF
SDF17N60 ..SFU9014
SFU9024 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPD02N60C3
SPD02N60S5 ..SSG4410N
SSG4434N ..SSM3K122TU
SSM3K123TU ..SSP6N70A
SSP6N80A ..STB50N25M5
STB50NF25 ..STD5NK40Z
STD5NK50Z ..STF9NK90Z
STF9NM60N ..STLT20FI
STLT29 ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT3402N
STT3405P ..STV6NA60
STV7NA40 ..TK130F06K3
TK13A25D ..TPC8012-H
TPC8013-H ..TPCC8007
TPCC8008 ..UT40N03
UT40N03T ..ZVN3310F
ZVN3320A ..ZXMS6006SG
 
BUK9507-30B All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUK9507-30B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9507-30B

Type of BUK9507-30B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 157

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of BUK9507-30B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: TO220AB

Equivalent transistors for BUK9507-30B

BUK9507-30B PDF doc:

1.1. buk9507-30b_buk9607-30b.pdf Size:300K _philips

BUK9507-30B
BUK9507-30B
BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 327 mJ RDSon = 5.9 m? (typ) ID ? 75 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make

4.1. buk9505-30a.pdf Size:987K _philips

BUK9507-30B
BUK9507-30B
BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 30 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 230 W Static characteristics RDSon drain-source on-state VGS =5V; ID =25A; - 4.3 5 m? resistance Tj =25°C VGS =10V; ID =25A; - 3.9 4.6 m? Tj =25°C Avalanche ruggedness EDS(AL)S non-repetitive ID =75A; Vs

4.2. buk9508_buk9608-55a_2.pdf Size:78K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 200 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 8 m? applications. VGS = 10 V 7.3 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Dra

4.3. buk9506-30_1.pdf Size:48K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 6 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±

4.4. buk9508-55_2.pdf Size:52K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 8 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±

4.5. buk9505-30a_2.pdf Size:50K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is intended for Ptot Total power dissipation 230 W use in automotive and general Tj Junction temperature 175 ?C purpose switching applications. RDS(ON) Drain-source on-state resistance VGS = 5 V 5 m? VGS = 10 V 4.6 m? PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±VGS Gate-source voltage - - 10 V ±VGSM Non-repet

4.6. buk9506-75b_buk9606-75b.pdf Size:333K _philips

BUK9507-30B
BUK9507-30B
BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V, and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 852 mJ RDSon = 5.2 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to s MBB076 drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

4.7. buk9504-40a_buk9604-40a_buk9e04-40a.pdf Size:358K _philips

BUK9507-30B
BUK9507-30B
BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] mb 2 drain (d) 3 source (s) d mb mounting base, connected to g drain (d) 2 s MBB076 1 3 MBK116 1 2 3 MBK112 MBK106 1 2 3 SOT226 (I2-PAK) SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 packa

4.8. buk9509-55a_buk9609-55a.pdf Size:313K _philips

BUK9507-30B
BUK9507-30B
BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] 2 drain (d) mb 3 source (s) d mb mounting base; connected to drain (d) g s MBB076 2 13 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9609-55A Philips Semiconductors TrenchMOS™ logic leve

4.9. buk9508-55a_buk9608-55a.pdf Size:328K _philips

BUK9507-30B
BUK9507-30B
BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d mb [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9608-55A Philips Semiconductors TrenchMOS™ logic level F

4.10. buk9509_buk9609_75a-02.pdf Size:326K _philips

BUK9507-30B
BUK9507-30B
BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9509-75A; BUK9609-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Tab

4.11. buk9506_buk9606-55a_2.pdf Size:66K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 230 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 6.3 m? applications. VGS = 10 V 5.8 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR D

See also transistors datasheet: BUK9245-55A , BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , IRF540N , BUK9508-55B , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A .

Keywords

 BUK9507-30B Datasheet  BUK9507-30B Datenblatt  BUK9507-30B RoHS  BUK9507-30B Distributor
 BUK9507-30B Application Notes  BUK9507-30B Component  BUK9507-30B Circuit  BUK9507-30B Schematic
 BUK9507-30B Equivalent  BUK9507-30B Cross Reference  BUK9507-30B Data Sheet  BUK9507-30B Fiche Technique

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