MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTP20N15E
MTP2P50E ..NTD14N03R
NTD18N06L ..NTR4170N
NTR4171P ..PHT4NQ10LT
PHT4NQ10T ..PSMN1R2-25YL
PSMN1R2-25YLC ..RF1S50N06LESM
RF1S50N06SM ..RJK03E3DNS
RJK03E4DPA ..RQJ0601DGDQS
RQJ0602EGDQA ..SDF12N90
SDF130JAA-D ..SFU2955
SFU9014 ..SMK0260IS
SMK0270D ..SML6017AFN
SML601R3AN ..SPI21N50C3
SPI80N06S-08 ..SSG6612N
SSG6680 ..SSM3K44FS
SSM3K44MFV ..SSRF90N06-10
SSS10N60A ..STD12N05
STD12N05-1 ..STE250N05
STE250N06 ..STI42N65M5
STI4N62K3 ..STP200N6F3
STP200NF03 ..STP6N50FI
STP6N52K3 ..STV5NA80
STV60N03L-12 ..TK11A50D
TK11A55D ..TPC6103
TPC6104 ..TPCA8109
TPCA8120 ..UT3310
UT3400 ..ZDS020N60
ZDX130N50 ..ZXMP7A17K
ZXMS6001N3 ..ZXMS6006SG
 
BUK9507-30B All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUK9507-30B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9507-30B

Type of BUK9507-30B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 157

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of BUK9507-30B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: TO220AB

Equivalent transistors for BUK9507-30B

BUK9507-30B PDF doc:

1.1. buk9507-30b_buk9607-30b.pdf Size:300K _philips

BUK9507-30B
BUK9507-30B
BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 327 mJ RDSon = 5.9 m? (typ) ID ? 75 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make

4.1. buk9505-30a.pdf Size:987K _philips

BUK9507-30B
BUK9507-30B
BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 30 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 230 W Static characteristics RDSon drain-source on-state VGS =5V; ID =25A; - 4.3 5 m? resistance Tj =25°C VGS =10V; ID =25A; - 3.9 4.6 m? Tj =25°C Avalanche ruggedness EDS(AL)S non-repetitive ID =75A; Vs

4.2. buk9508_buk9608-55a_2.pdf Size:78K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 200 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 8 m? applications. VGS = 10 V 7.3 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Dra

4.3. buk9506-30_1.pdf Size:48K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 6 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±

4.4. buk9508-55_2.pdf Size:52K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 8 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±

4.5. buk9505-30a_2.pdf Size:50K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is intended for Ptot Total power dissipation 230 W use in automotive and general Tj Junction temperature 175 ?C purpose switching applications. RDS(ON) Drain-source on-state resistance VGS = 5 V 5 m? VGS = 10 V 4.6 m? PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±VGS Gate-source voltage - - 10 V ±VGSM Non-repet

4.6. buk9506-75b_buk9606-75b.pdf Size:333K _philips

BUK9507-30B
BUK9507-30B
BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V, and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 852 mJ RDSon = 5.2 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to s MBB076 drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

4.7. buk9504-40a_buk9604-40a_buk9e04-40a.pdf Size:358K _philips

BUK9507-30B
BUK9507-30B
BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] mb 2 drain (d) 3 source (s) d mb mounting base, connected to g drain (d) 2 s MBB076 1 3 MBK116 1 2 3 MBK112 MBK106 1 2 3 SOT226 (I2-PAK) SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 packa

4.8. buk9509-55a_buk9609-55a.pdf Size:313K _philips

BUK9507-30B
BUK9507-30B
BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] 2 drain (d) mb 3 source (s) d mb mounting base; connected to drain (d) g s MBB076 2 13 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9609-55A Philips Semiconductors TrenchMOS™ logic leve

4.9. buk9508-55a_buk9608-55a.pdf Size:328K _philips

BUK9507-30B
BUK9507-30B
BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d mb [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9608-55A Philips Semiconductors TrenchMOS™ logic level F

4.10. buk9509_buk9609_75a-02.pdf Size:326K _philips

BUK9507-30B
BUK9507-30B
BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9509-75A; BUK9609-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Tab

4.11. buk9506_buk9606-55a_2.pdf Size:66K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 230 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 6.3 m? applications. VGS = 10 V 5.8 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR D

See also transistors datasheet: BUK9245-55A , BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , IRF540N , BUK9508-55B , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A .

Keywords

 BUK9507-30B Datasheet  BUK9507-30B Datenblatt  BUK9507-30B RoHS  BUK9507-30B Distributor
 BUK9507-30B Application Notes  BUK9507-30B Component  BUK9507-30B Circuit  BUK9507-30B Schematic
 BUK9507-30B Equivalent  BUK9507-30B Cross Reference  BUK9507-30B Data Sheet  BUK9507-30B Fiche Technique

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