MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
BUK9507-30B
  BUK9507-30B
  BUK9507-30B
  BUK9507-30B
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306N
SMG2306NE ..SML40J53
SML40J93 ..SPA08N50C3
SPA08N80C3 ..SSD9973
SSDF9504 ..SSM3J16FV
SSM3J16TE ..SSM6N7002FU
SSM6P05FU ..STB190NF04
STB19NF20 ..STD3LN62K3
STD3N25-1 ..STF25NM60ND
STF26NM60N ..STK830F
STK830P ..STP14NF12FP
STP14NK50Z ..STP5N30L
STP5N30LFI ..STS4DNF60L
STS4DNFS30L ..STU612D
STU616S ..TF252
TF252TH ..TK80F08K3
TK80S04K3L ..TPCA8045-H
TPCA8046-H ..UP2003
UP672 ..WTC2302
WTC2305 ..ZXMP10A13F
ZXMP10A16K ..ZXMS6006SG
 
BUK9507-30B All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

BUK9507-30B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9507-30B

Type of BUK9507-30B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 157

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of BUK9507-30B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: TO220AB

Equivalent transistors for BUK9507-30B - Cross-Reference Search

BUK9507-30B PDF doc:

1.1. buk9507-30b_buk9607-30b.pdf Size:300K _philips

BUK9507-30B
BUK9507-30B
BUK95/9607-30B TrenchMOS™ logic level FET Rev. 01 — 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 327 mJ RDSon = 5.9 m? (typ) ID ? 75 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make

4.1. buk9505-30a.pdf Size:987K _philips

BUK9507-30B
BUK9507-30B
BUK9505-30A N-channel TrenchMOS logic level FET Rev. 3 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance 1.3 Applications Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 30 V ID drain current Tmb = 25 °C - - 75 A Ptot total power dissipation - - 230 W Static characteristics RDSon drain-source on-state VGS =5V; ID =25A; - 4.3 5 m? resistance Tj =25°C VGS =10V; ID =25A; - 3.9 4.6 m? Tj =25°C Avalanche ruggedness EDS(AL)S non-repetitive ID =75A; Vs

4.2. buk9508_buk9608-55a_2.pdf Size:78K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 200 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 8 m? applications. VGS = 10 V 7.3 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Dra

4.3. buk9506-30_1.pdf Size:48K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 6 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±

4.4. buk9508-55_2.pdf Size:52K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 55 V technology. The device features very ID Drain current (DC) 75 A low on-state resistance and has Ptot Total power dissipation 187 W integral zener diodes giving ESD Tj Junction temperature 175 ?C protection up to 2kV. It is intended for RDS(ON) Drain-source on-state 8 m? use in automotive and general resistance VGS = 5 V purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±

4.5. buk9505-30a_2.pdf Size:50K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9505-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using ’trench’ VDS Drain-source voltage 30 V technology which features very low ID Drain current (DC) 75 A on-state resistance. It is intended for Ptot Total power dissipation 230 W use in automotive and general Tj Junction temperature 175 ?C purpose switching applications. RDS(ON) Drain-source on-state resistance VGS = 5 V 5 m? VGS = 10 V 4.6 m? PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Drain-gate voltage RGS = 20 k? -30V ±VGS Gate-source voltage - - 10 V ±VGSM Non-repet

4.6. buk9506-75b_buk9606-75b.pdf Size:333K _philips

BUK9507-30B
BUK9507-30B
BUK95/9606-75B TrenchMOS™ logic level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V, and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 852 mJ RDSon = 5.2 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb d [1] 2 drain (d) 3 source (s) g mb mounting base, connected to s MBB076 drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

4.7. buk9504-40a_buk9604-40a_buk9e04-40a.pdf Size:358K _philips

BUK9507-30B
BUK9507-30B
BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] mb 2 drain (d) 3 source (s) d mb mounting base, connected to g drain (d) 2 s MBB076 1 3 MBK116 1 2 3 MBK112 MBK106 1 2 3 SOT226 (I2-PAK) SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 packa

4.8. buk9509-55a_buk9609-55a.pdf Size:313K _philips

BUK9507-30B
BUK9507-30B
BUK95/9609-55A TrenchMOS™ logic level FET Rev. 01 — 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] 2 drain (d) mb 3 source (s) d mb mounting base; connected to drain (d) g s MBB076 2 13 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9609-55A Philips Semiconductors TrenchMOS™ logic leve

4.9. buk9508-55a_buk9608-55a.pdf Size:328K _philips

BUK9507-30B
BUK9507-30B
BUK95/9608-55A TrenchMOS™ logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb d mb [1] 2 drain (d) 3 source (s) g mb mounting base; s MBB076 connected to drain (d) 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. BUK95/9608-55A Philips Semiconductors TrenchMOS™ logic level F

4.10. buk9509_buk9609_75a-02.pdf Size:326K _philips

BUK9507-30B
BUK9507-30B
BUK9509-75A; BUK9609-75A TrenchMOS™ logic level FET Rev. 02 — 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9509-75A; BUK9609-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Tab

4.11. buk9506_buk9606-55a_2.pdf Size:66K _philips

BUK9507-30B
BUK9507-30B
Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A ’trench’ technology which features Ptot Total power dissipation 230 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 6.3 m? applications. VGS = 10 V 5.8 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR D

See also transistors datasheet: BUK9245-55A , BUK9275-100A , BUK9277-55A , BUK9504-40A , BUK9505-30A , BUK9506-40B , BUK9506-55B , BUK9506-75B , IRF540N , BUK9508-55B , BUK9509-40B , BUK9509-75A , BUK9510-100B , BUK9510-55A , BUK9511-55A , BUK9512-55B , BUK9514-55A .

Keywords

 BUK9507-30B Datasheet  BUK9507-30B Datenblatt  BUK9507-30B RoHS  BUK9507-30B Distributor
 BUK9507-30B Application Notes  BUK9507-30B Component  BUK9507-30B Circuit  BUK9507-30B Schematic
 BUK9507-30B Equivalent  BUK9507-30B Cross Reference  BUK9507-30B Data Sheet  BUK9507-30B Fiche Technique

 

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages