BUK9624-55A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: BUK9624-55A

Type of BUK9624-55A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 105

Maximum drain-source voltage |Uds|, V: 55V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 46

Maximum junction temperature (Tj), °C:

Rise Time of BUK9624-55A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0217

Package: D2PAK

Equivalent transistors for BUK9624-55A

BUK9624-55A PDF documents for downloads:

1.1. buk9524-55a_buk9624-55a.pdf Size:333K _philips

BUK9524-55A; BUK9624-55A TrenchMOS™ logic level FET Rev. 01 — 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9524-55A in SOT78 (TO-220AB) BUK9624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; connected to drain (d) g s MBB076 2 MBK106 13 MBK116 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) BUK9524-55A; BUK9624-55A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2: Qui

1.2. buk9624-55_1.pdf Size:55K _philips

Philips Semiconductors Product specification TrenchMOS? transistor BUK9624-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 45 A the device features very low on-state Ptot Total power dissipation 103 W resistance and has integral zener Tj Junction temperature 175 ?C diodes giving ESD protection up to RDS(ON) Drain-source on-state 24 m? 2kV. It is intended for use in resistance VGS = 5 V automotive and general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-ga

4.1. buk9620-55_2.pdf Size:55K _philips

Philips Semiconductors Product specification TrenchMOS? transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 52 A the device features very low on-state Ptot Total power dissipation 116 W resistance and has integral zener Tj Junction temperature 175 ?C diodes giving ESD protection up to RDS(ON) Drain-source on-state 20 m? 2kV. It is intended for use in resistance VGS = 5 V automotive and general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-ga

4.2. buk9523-75a_buk9623-75a.pdf Size:324K _philips

BUK9523-75A; BUK9623-75A TrenchMOS™ logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9523-75A in SOT78 (TO-220AB) BUK9623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) 2 s MBB076 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9523-75A; BUK9623-75A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2:

4.3. buk9528-55a_buk9628-55a.pdf Size:317K _philips

BUK9528-55A; BUK9628-55A TrenchMOS™ logic level FET Rev. 01 — 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V and 24 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9528-55A; BUK9628-55A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference data Table 2: Q

4.4. buk952r8-30b_buk962r8-30b.pdf Size:340K _philips

BUK95/962R8-30B TrenchMOS™ logic level FET Rev. 02 — 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) BUK962R8-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 2.3 J RDSon = 2.4 m? (typ) ID ? 75 A Ptot ? 300 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] 2 drain (d) d 3 source (s) mb mounting base, g connected to drain (d) 2 s MBB076 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to

4.5. buk9620-100b.pdf Size:196K _philips

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC-Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V, 24 V and 42 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 100 V ID drain current VGS =5V; Tmb =25°C; - - 63 A see Figure 1; see Figure 3 Ptot total power Tmb = 25 °C; see Fig

4.6. buk9628-55_2.pdf Size:55K _philips

Philips Semiconductors Product specification TrenchMOS? transistor BUK9628-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technology ID Drain current (DC) 40 A the device features very low on-state Ptot Total power dissipation 96 W resistance and has integral zener Tj Junction temperature 175 ?C diodes giving ESD protection up to RDS(ON) Drain-source on-state 28 m? 2kV. It is intended for use in resistance VGS = 5 V automotive and general purpose switching applications. PINNING - SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gat

4.7. buk9520-100a_buk9620-100a.pdf Size:321K _philips

BUK9520-100A; BUK9620-100A TrenchMOS™ logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: c c 12 V, 24 V and 42 V loads Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) BUK9520-100A; BUK9620-100A Philips Semiconductors TrenchMOS™ logic level FET 5. Quick reference dat

4.8. buk9528_buk9628-100a.pdf Size:77K _philips

Philips Semiconductors Product specification TrenchMOS? transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 49 A ’trench’ technology which features Ptot Total power dissipation 166 W very low on-state resistance. It is Tj Junction temperature 175 ?C intended for use in automotive and RDS(ON) Drain-source on-state general purpose switching resistance VGS = 5 V 28 m? applications. VGS = 10 V 27 m? PINNING TO220AB & SOT404 PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab d mb 1 gate 2 drain 2 g 3 source 1 3 1 2 3 SOT404 TO220AB tab/mb drain s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR

4.9. buk9621-30_1.pdf Size:53K _philips

Philips Semiconductors Product specification TrenchMOS? transistor BUK9621-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using ’trench’ technology. ID Drain current (DC) 50 A Thedevice features verylow on-state Ptot Total power dissipation 94 W resistance and has integral zener Tj Junction temperature 175 ?C diodes giving ESD protection up to RDS(ON) Drain-source on-state 21 m? 2kV. It is intended for use in resistance VGS = 5 V automotive and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 30 V VDGR Dra

4.10. buk9529-100b_buk9629-100b.pdf Size:297K _philips

BUK95/9629-100B TrenchMOS™ logic level FET Rev. 01 — 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9529-100B in SOT78 (TO-220AB) BUK9629-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance Q101 compliant 175 °C rated Logic level compatible. 1.3 Applications Automotive systems 12 V, 24 V and 42 V loads Motors, lamps and solenoids General purpose power switching. 1.4 Quick reference data EDS(AL)S ? 152 mJ RDSon =24m? (typ) ID ? 46 A Ptot ? 157 W. 2. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb [1] mb 2 drain (d) d 3 source (s) mb mounting base; g connected to drain (d) s MBB076 2 MBK106 1 3 MBK116 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is

See also transistors datasheet: BUK9615-100A , BUK9616-55A , BUK9616-75B , BUK96180-100A , BUK9618-55A , BUK9620-100B , BUK9620-55A , BUK9623-75A , IRFP9240 , BUK9628-100A , BUK9628-55A , BUK9629-100B , BUK962R8-30B , BUK9635-100A , BUK9635-55A , BUK963R2-40B , BUK9640-100A .

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