PHC21025 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PHC21025

Type of PHC21025 transistor: MOSFET

Type of control channel: NP -Channel

Maximum power dissipation (Pd), W: 1

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A:

Maximum junction temperature (Tj), °C:

Rise Time of PHC21025 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.25

Package: SO8

Equivalent transistors for PHC21025

PHC21025 PDF documents for downloads:

1.1. phc21025_2.pdf Size:130K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PHC21025 Complementary enhancement mode MOS transistors 1997 Jun 20 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification Complementary enhancement PHC21025 mode MOS transistors FEATURES PINNING - SOT96-1 (SO8) • High-speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1s1 source 1 • Very low on-resistance. 2g1 gate 1 3s2 source 2 APPLICATIONS 4g2 gate 2 5d2 drain 2 • Motor and actuator driver 6d2 drain 2 • Power management 7d1 drain 1 • Synchronized rectification. 8d1 drain 1 DESCRIPTION One N-channel and one P-channel enhancement mode d1 d1 d2 d2 handbook, halfpage MOS transistor in an 8-pin plastic SOT96-1 (SO8) 8 5 package. CAUTION 1 4 The device is supplied in an antistatic package. s1 g1 s2 g2 The gate-source input must be protected against static MAM118 discharge during transport or handling. Fig.1 Sim

See also transistors datasheet: PHB27NQ10T , PHB29N08T , PHB32N06LT , PHB33NQ20T , PHB45NQ10T , PHB45NQ15T , PHB47NQ10T , PHB66NQ03LT , IRF150 , PHC2300 , PHD101NQ03LT , PHD20N06T , PHD38N02LT , PHD71NQ03LT , PHD97NQ03LT , PHD9NQ20T , PHK04P02T .

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