PSMN005-75B MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PSMN005-75B

Type of PSMN005-75B transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 230

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C:

Rise Time of PSMN005-75B transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.005

Package: D2PAK

Equivalent transistors for PSMN005-75B

PSMN005-75B PDF documents for downloads:

2.1. psmn005-25d_hg_5.pdf Size:149K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 25 V • Very low on-state resistance • Fast switching ID = 75 A • Logic level compatible RDS(ON) ? 5.8 m? (VGS = 10 V) g RDS(ON) ? 7.5 m? (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab Philips Trench technology to achieve the lowest possible 1 gate on-state resistance in each package at each voltage rating. 2 drain1 Applications:- 3 source 2 • d.c. to d.c. converters • switched mode power supplies tab drain 1 3 The PSMN005-25D is supplied in the SOT428 (Dpak) surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDI

2.2. psmn005-55b_p_hg.pdf Size:120K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Very low on-state resistance • Fast switching ID = 75 A • Low thermal resistance RDS(ON) ? 5.8 m? (VGS = 10 V) g RDS(ON) ? 6.3 m? (VGS = 5 V) s GENERAL DESCRIPTION SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN005-55P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN005-55B is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab d

3.1. psmn005_75p_75b.pdf Size:271K _philips2

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications High frequency computer motherboard DC to DC converters OR-ing applications. 4. Pinning information Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) mb mb [1] 2 drain (d) d 3 source (s) mb drain (d) g 2 s MBB076 1 3 MBK116 MBK106 1 2 3 SOT404 (D2-PAK) SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. PSMN005-75P/75B Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Condi

See also transistors datasheet: PMZ1000UN , PMZ250UN , PMZ270XN , PMZ350XN , PMZ390UN , PMZ760SN , PSMN004-60B , PSMN005-30K , 3SK45 , PSMN006-20K , PSMN008-75B , PSMN009-100B , PSMN009-100P , PSMN011-30YL , PSMN011-80YS , PSMN012-100YS , PSMN012-60YS .

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