APT1001R3BN MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: APT1001R3BN

Type of APT1001R3BN transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 310

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of APT1001R3BN transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2950

Maximum drain-source on-state resistance (Rds), Ohm: 1.3

Package: TO247

Equivalent transistors for APT1001R3BN

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See also transistors datasheet: APT1001R1BN , APT1001R1BVFR , APT1001R1HN , APT1001R1HVR , APT1001R2AN , APT1001R2BN , APT1001R2HN , APT1001R3AN , IRFP250 , APT1001R3HN , APT1001R6BN , APT1001RAN , APT1001RBN , APT1001RBVR , APT1001RSVR , APT10025JVFR , APT10025JVR .

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