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PSMN018-80YS MOSFET (IC) Datasheet. Cross Reference Search. PSMN018-80YS Equivalent

Type Designator: PSMN018-80YS

Type of PSMN018-80YS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 89

Maximum drain-source voltage |Uds|, V: 80

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 45

Maximum junction temperature (Tj), °C:

Rise Time of PSMN018-80YS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.018

Package: LFPAK

PSMN018-80YS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PSMN018-80YS PDF doc:

1.1. psmn018-80ys.pdf Size:225K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN018-80YS N-channel LFPAK 80 V 18 m? standard level MOSFET Rev. 02 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

4.1. psmn015-110p.pdf Size:91K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN015-110P TrenchMOS™ Standard level FET Rev. 01 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Low gate charge. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Quick refer

4.2. psmn017-60ys.pdf Size:241K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN017-60YS N-channel LFPAK 60 V 15.7 m? standard level MOSFET Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

4.3. psmn012-60ys.pdf Size:232K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN012-60YS N-channel LFPAK 60 V, 11.1 m? standard level MOSFET Rev. 01 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS prov

4.4. psmn016-100ys.pdf Size:240K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN016-100YS N-channel 100 V 16.3 m? standard level MOSFET in LFPAK Rev. 03 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS p

4.5. psmn015-100_series_hg_3.pdf Size:153K _philips2

PSMN018-80YS
PSMN018-80YS

DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS(TM) transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Very low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID

4.6. psmn010-55d_4.pdf Size:100K _philips2

PSMN018-80YS
PSMN018-80YS

Philips Semiconductors Product specification N-channel logic level TrenchMOS? transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 55 V • Very low on-state resistance • Fast switching ID = 75 A • Logic level compatible RDS(ON) ? 10.5 m? (VGS = 10 V) g RDS(ON) ? 12 m? (VGS = 5 V) s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use

4.7. psmn017-30ll.pdf Size:397K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN017-30LL N-channel QFN3333 30 V 17 m? logic level MOSFET Rev. 03 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low

4.8. psmn013-100es.pdf Size:213K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN013-100ES N-channel 100 V 13.9 m? standard level MOSFET in I2PAK Rev. 02 — 19 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low c

4.9. psmn011-80ys.pdf Size:219K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN011-80YS N-channel LFPAK 80 V 11 m? standard level MOSFET Rev. 02 — 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provid

4.10. psmn013-80ys.pdf Size:221K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN013-80YS N-channel LFPAK 80 V 12.9 m? standard level MOSFET Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provide

4.11. psmn013-100ps.pdf Size:170K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN013-100PS N-channel 100V 13.9m? standard level MOSFET in TO220. Rev. 02 — 22 January 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due t

4.12. psmn015-100p_100b.pdf Size:101K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN015-100P/100B N-channel TrenchMOS™ Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package. 1.2 Features Low on-state resistance Avalanche ruggedness rated. 1.3 Applications DC-to-DC converters Switched-mode power

4.13. psmn012-80ps.pdf Size:221K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN012-80PS N-channel 80 V 11 m? standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switchi

4.14. psmn013-30ll.pdf Size:399K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN013-30LL N-channel QFN3333 30 V 13 m? logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment. 1.2 Features and benefits High efficiency due to low

4.15. psmn015-60ps.pdf Size:190K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN015-60PS N-channel 60 V 14.8 m? standard level MOSFET Rev. 3 — 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ? High efficiency due to low switc

4.16. psmn012-100ys.pdf Size:232K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN012-100YS N-channel 100V 12m? standard level MOSFET in LFPAK Rev. 04 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS pr

4.17. psmn014-40ys.pdf Size:218K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN014-40YS N-channel LFPAK 40 V, 14 m? standard level MOSFET Rev. 03 — 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provi

4.18. psmn016-100ps.pdf Size:236K _philips2

PSMN018-80YS
PSMN018-80YS

PSMN016-100PS N-channel 100V 16 m? standard level MOSFET in TO220 Rev. 01 — 1 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to

See also transistors datasheet: PSMN015-110P , PSMN015-60PS , PSMN016-100PS , PSMN016-100XS , PSMN016-100YS , PSMN017-30LL , PSMN017-60YS , PSMN017-80PS , IRFP4229 , PSMN020-100YS , PSMN022-30PL , PSMN023-80LS , PSMN025-100D , PSMN026-80YS , PSMN027-100PS , PSMN028-100YS , PSMN030-150B .

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