PSMN5R0-80PS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PSMN5R0-80PS

Type of PSMN5R0-80PS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 270

Maximum drain-source voltage |Uds|, V: 80V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C:

Rise Time of PSMN5R0-80PS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0047

Package: TO220AB

Equivalent transistors for PSMN5R0-80PS

PSMN5R0-80PS PDF documents for downloads:

1.1. psmn5r0-80ps.pdf Size:224K _philips2

PSMN5R0-80PS N-channel 80 V 4.7 m? standard level MOSFET Rev. 02 — 23 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ? 25 °C; Tj ? 175 °C - - 80 V ID drain current Tmb =25°C; VGS =10V; - - 100 A see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 - - 270 W dissipation Dynamic characteristics QGD gate-drain charge VGS =10V; ID =25 A; - 21 - nC VDS = 40 V; see Figure 14; see Figure 15 Static characterist

2.1. psmn5r0-100es.pdf Size:238K _philips2

PSMN5R0-100ES N-channel 100 V 5 m? standard level MOSFET in I2PAK Rev. 2 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ? 25 °C; Tj ? 175 °C - - 100 V voltage [1] ID drain current Tmb =25°C; VGS =10V; - - 120 A see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 - - 338 W dissipation Tj junction -55 - 175 °C temperature Static characteristics RDSon drain-source VGS =10V; ID =25A; - 7.7 9 m? on-st

2.2. psmn5r0-100ps.pdf Size:245K _philips2

PSMN5R0-100PS N-channel 100 V 5 m? standard level MOSFET in TO-220 Rev. 2 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ? 25 °C; Tj ? 175 °C - - 100 V voltage [1] ID drain current Tmb =25°C; VGS =10V; - - 120 A see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 - - 338 W dissipation Tj junction -55 - 175 °C temperature Static characteristics RDSon drain-source VGS =10V; ID =25A; - 7.7 9 m? on-

2.3. psmn5r0-30yl.pdf Size:231K _philips2

PSMN5R0-30YL N-channel 30 V 5 m? logic level MOSFET in LFPAK Rev. 4 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Class-D amplifiers Motor control DC-to-DC converters Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tj ? 25 °C; Tj ? 175 °C - - 30 V voltage ID drain current Tmb =25°C; VGS =10V; - - 91 A see Figure 1 Ptot total power Tmb = 25 °C; see Figure 2 - - 61 W dissipation Tj junction -55 - 175 °C temperature Static characteristics RDSon drain-source VGS =10V; ID =15A; - 3.63

See also transistors datasheet: PSMN4R3-80PS , PSMN4R4-80PS , PSMN4R5-30YLC , PSMN4R5-40PS , PSMN4R6-60PS , PSMN5R0-100ES , PSMN5R0-100PS , PSMN5R0-30YL , 3SK73 , PSMN5R5-60YS , PSMN5R6-100PS , PSMN5R6-100XS , PSMN5R8-30LL , PSMN5R8-40YS , PSMN5R9-30YL , PSMN6R0-25YLB , PSMN6R0-30YL .

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