APT1002R4CN
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: APT1002R4CN
Type of APT1002R4CN
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 150
Maximum drain-source voltage |Uds|, V: 1000V
Maximum gate-source voltage |Ugs|, V: 30
Maximum drain current |Id|, A: 5
Maximum junction temperature (Tj), °C: 150
Rise Time of APT1002R4CN
transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 1800
Maximum drain-source on-state resistance (Rds), Ohm: 2.4
Package: TO254
Equivalent transistors for APT1002R4CN
APT1002R4CN
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. Keywords| APT1002R4CN
Datasheet | APT1002R4CN
Datenblatt | APT1002R4CN
RoHS | APT1002R4CN
Distributor | | APT1002R4CN
Application Notes | APT1002R4CN
Component | APT1002R4CN
Circuit | APT1002R4CN
Schematic | | APT1002R4CN
Equivalent | APT1002R4CN
Cross Reference | APT1002R4CN
Data Sheet | APT1002R4CN
Fiche Technique |
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