STB12N120K5 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STB12N120K5

Type of STB12N120K5 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 250

Maximum drain-source voltage |Uds|, V: 1200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C:

Rise Time of STB12N120K5 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.69

Package: D2PAK

Equivalent transistors for STB12N120K5

STB12N120K5 PDF documents for downloads:

4.1. stb12nm50fd_stp12nm50fd-fp_stw14nm50fd.pdf Size:483K _st

STB12NM50FD - STB12NM50FD-1 STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32? - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw 3 3 STB12NM50FD 500V <0.4? 12A 160W 2 2 1 1 TO-220 STB12NM50FD-1 500V <0.4? 12A 160W TO-220FP STP12NM50FD 500V <0.4? 12A 160W 3 1 STP12NM50FDFP 500V <0.4? 12A 35W D?PAK D?PAK STW14NM50FD 500V <0.4? 12A 160W ¦ 100% avalanche tested 3 2 1 ¦ High dv/dt and avalanche capabilities TO-247 I?PAK ¦ Low input capacitance and gate charge ¦ Low gate input resistance Internal schematic diagram ¦ Tight process control and high manufacturing yields Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications ¦ Switching application Order codes Part number Marking Packa

4.2. stb12nm50nd_std12nm50nd_stf12nm50nd.pdf Size:1025K _st

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 ? 11 A STD12NM50ND 550 V 0.38 ? 11 A STF12NM50ND 550 V 0.38 ? 11 A 3 3 3 2 1 1 1 ¦ 100% avalanche tested D2PAK DPAK TO-220FP ¦ Low input capacitance and gate charge ¦ Low gate input resistance Application ¦ Switching applications Figure 1. Internal schematic diagram Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body D(2) diode. The resulting product has reduced on- resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. G(1) S(3) AM01475v1 Table 1. Device summary Order codes Marking Package Packaging STB12NM50ND 12NM50ND D2PAK Tape and reel STD12NM50ND 12NM50ND DPAK Tape and reel STF12NM50ND 12NM50ND TO-220FP Tube June 2009 Doc ID 1493

4.3. stp12nm50_stp12nm50fp_stb12nm50_stb12nm50-1.pdf Size:542K _st

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30? - 12A TO-220/FP/D2/I2PAK MDmesh™ Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 STB12NM50 550V <0.35? 12A 2 2 1 1 STB12NM50-1 550V <0.35? 12A TO-220 TO-220FP STP12NM50 550V <0.35? 12A STP12NM50FP 550V <0.35? 12A ¦ High dv/dt and avalanche capabilities 3 3 1 2 1 ¦ Low input capacitance and gate charge D?PAK I?PAK ¦ 100% avalanche tested ¦ Low gate input resistance ¦ Tight process control and high manufacturing yields Internal schematic diagram Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better

4.4. stb12nm60n-1_stf12nm60n_stp12nm60n_stw12nm60n.pdf Size:618K _st

STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 2 1 STB12NM60N 650V < 0.41? 10A D?PAK I?PAK STB12NM60N-1 650V < 0.41? 10A STF12NM60N 650V < 0.41? 10A(1) STP12NM60N 650V < 0.41? 10A TO-247 STW12NM60N 650V < 0.41? 10A 3 3 2 2 1 1 1. Limited only by maximum temperature allowed TO-220FP TO-220 ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Internal schematic diagram Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Application ¦ Switching application Order codes Part number Marking Pa

4.5. stb12nm50n_std12nm50n_sti12nm50n_stf12nm50n_stp12nm50n.pdf Size:586K _st

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 ?, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 ? 11 A I?PAK TO-220 STD12NM50N 550 V 0.38 ? 11 A 3 1 STI12NM50N 550 V 0.38 ? 11 A DPAK STF12NM50N 550 V 0.38 ? 11 A (1) STP12NM50N 550 V 0.38 ? 11 A 3 3 2 1 1 ¦ 100% avalanche tested D?PAK TO-220FP ¦ Low input capacitance and gate charge ¦ Low gate input resistance Application Figure 1. Internal schematic diagram ¦ Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking

4.6. stb12nk80z_stp12nk80z_stw12nk80z.pdf Size:526K _st

STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65? - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID PW (@Tjmax) STB12NK80Z 800V <0.75? 10.5 A 190W 3 STP12NK80Z 800V <0.75? 10.5 A 190W 2 1 STW12NK80Z 800V <0.75? 10.5 A 190W TO-220 TO-247 ¦ Extremely high dv/dt capability 3 ¦ Improved esd capability 1 ¦ 100% avalanche tested D2PAK ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing reliability Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Application ¦ Switching application Order codes Part number Marking Package Packaging STB12NK80Z B12NK80Z Tape & reel D2PAK STP12NK80Z P12NK80Z TO-2

See also transistors datasheet: STB11NK40Z , STB11NK50Z , STB11NM60 , STB11NM60FD , STB11NM80 , STB120N4F6 , STB120N4LF6 , STB120NF10 , IRFB3306 , STB12NK80Z , STB12NM50 , STB12NM50N , STB12NM50ND , STB13NK60ZT4 , STB13NM60N , STB140NF55 , STB140NF75 .

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