STB140NF75 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STB140NF75

Type of STB140NF75 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 310

Maximum drain-source voltage |Uds|, V: 75V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 120

Maximum junction temperature (Tj), °C:

Rise Time of STB140NF75 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0075

Package: D2PAK

Equivalent transistors for STB140NF75

STB140NF75 PDF documents for downloads:

1.1. stb140nf75_stp140nf75-1_stp140nf75.pdf Size:539K _st

STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065? - 120A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STB140NF75 75V <0.0075? 120A(1) 3 1 STB140NF75-1 75V <0.0075? 120A(1) 3 2 1 STP140NF75 75V <0.0075? 120A(1) D2PAK TO-220 1. Current limited by package ¦ 100% avalanche tested 3 2 1 Description I2PAK This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- Internal schematic diagram resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Switching application Order codes Part number Marking Package Packaging STB140NF75T4 B140NF75 D2PAK Tape & reel STB140NF75-1 B140NF75 I2PAK Tube STP140NF75 P140NF75 TO-220 Tube June 2006 Rev 4 1/18 www.st.com 18 Contents STB140NF75 - STP14

1.2. stb140nf75.pdf Size:521K _st

STB140NF75 STP140NF75 STB140NF75-1 N-CHANNEL 75V - 0.0065 ? -120A D?PAK/I?PAK/TO-220 STripFET™ II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE VDSS RDS(on) ID STB140NF75 75 V <0.0075 ? 120 A(**) STP140NF75 75 V <0.0075 ? 120 A(**) STB140NF75-1 75 V <0.0075 ? 120 A(**) TYPICAL RDS(on) = 0.0065 ? 3 3 2 1 1 SURFACE-MOUNTING D?PAK (TO-263) POWER PACKAGE D2PAK I2PAK TO-263 TO-262 DESCRIPTION (Suffix “T4”) This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" 3 2 strip-based process. The resulting transistor 1 shows extremely high packing density for low on- TO-220 resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS AUTOMOTIVE 42V BATTERY DRIVERS Ordering Information SALES TYPE MARKING PACKAGE PACKAGING STB140NF75T4 B140NF75 D2PAK TAP

2.1. stb140nf55_stb140nf55-1_stp140nf55.pdf Size:481K _st

STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065? - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID (1) STB140NF55 55V <0.008? 80A STB140NF55-1 55V <0.008? 80A STP140NF55 55V <0.008? 80A 3 3 3 2 1. Current limited by package 1 2 1 1 D?PAK TO-220 I?PAK Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance Internal schematic diagram characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Motor control ¦ High current, switching application Order codes Part number Marking Package Packaging STB140NF55 B140NF55 D?PAK Tape & reel STB140NF55-1 B140NF55 I?PAK Tube STP140NF55 P140NF55 TO-220 Tube March 2007 Rev 4 1/15 www.st.com Contents STB140NF55 - STB140NF55

See also transistors datasheet: STB12N120K5 , STB12NK80Z , STB12NM50 , STB12NM50N , STB12NM50ND , STB13NK60ZT4 , STB13NM60N , STB140NF55 , IRLR2905 , STB141NF55 , STB14NK50Z , STB14NK60Z , STB14NM50N , STB150NF04 , STB150NF55 , STB155N3H6 , STB155N3LH6 .

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