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STB7NK80Z MOSFET (IC) Datasheet. Cross Reference Search. STB7NK80Z Equivalent

Type Designator: STB7NK80Z

Type of STB7NK80Z transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.2

Maximum junction temperature (Tj), °C:

Rise Time of STB7NK80Z transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.8

Package: D2PAK

STB7NK80Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STB7NK80Z PDF doc:

1.1. stb7nk80z_stb7nk80z-1_stp7nk80zfp_stp7nk80z.pdf Size:937K _st

STB7NK80Z
STB7NK80Z

STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 ?, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V < 1.8? 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8? 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8? 5.2A STB7NK80Z-1 800V < 1.8? 5.2A ¦ Extremely high dv/dt capability ¦ 100% avalanche tested 3 3

5.1. stb7n52k3_std7n52k3_stf7n52k3_stp7n52k3.pdf Size:1194K _st

STB7NK80Z
STB7NK80Z

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 1 1 STB7N52K3 525 V < 0.98 ? 6.2 A 90 W DPAK D?PAK STD7N52K3 525 V < 0.98 ? 6.2 A 90 W STF7N52K3 525 V < 0.98 ? 6.2 A (1) 25 W STP7N52K3 525 V < 0.98 ? 6.2 A 90 W 1. Limited by package 3 ¦ 100% avalanche tested

5.2. stb7nb40.pdf Size:61K _st

STB7NK80Z
STB7NK80Z

STB7NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB7NB40 400 V < 0.9 ? 7.0 A TYPICAL R = 0.75 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT D2PAK SALES OFFICE TO-263 DESCRIPTION (Suffix ”T4”) Using the latest high voltage

5.3. stb7nb50.pdf Size:99K _st

STB7NK80Z
STB7NK80Z

STB7NB60 ? N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB7NB60 600 V < 1.2 ? 7.2 A TYPICAL R = 1.0 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 1 3 GATE CHARGE MINIMIZED 2 1 I2PAK D2PAK DESCRIPTION TO-262 TO-252 Using the latest high voltage MESH OVERLAY? (suffix ”-1”) (Suffix

5.4. stb7na40.pdf Size:125K _st

STB7NK80Z
STB7NK80Z

STB7NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB7NA40 400 V < 1 ? 6.5 A n TYPICAL RDS(on) = 0.82 ? n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED 3 3 2 n REDUCED THRESHOLD VOLTAGE SPREAD 1 1 n THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE

5.5. stb7n52k3_std7n52k3_stf7n52k3_stp7n52k3_2.pdf Size:1317K _st

STB7NK80Z
STB7NK80Z

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 ?, 6 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Order codes VDSS ID Pw max. 3 3 1 1 STB7N52K3 90 W DPAK D?PAK STD7N52K3 90 W 525 V < 0.85 ? 6 A STF7N52K3 25 W STP7N52K3 90 W ¦ 100% avalanche tested 3 3 2 ¦ Extremely high dv/dt capability 2 1 1 ¦ Gate charge minimized TO-220 TO

See also transistors datasheet: STB70NF03L-1 , STB70NF3LL , STB70NFS03L , STB75NF20 , STB75NF75 , STB75NF75L , STB76NF75 , STB7N52K3 , IRFP4227 , STB7NK80Z-1 , STB80N20M5 , STB80NF03L-04 , STB80NF03L-04T4 , STB80NF10 , STB80NF55-08T4 , STB80NF55L-06 , STB80NF55L-08-1 .

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