STD5NK60Z MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STD5NK60Z

Type of STD5NK60Z transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 90

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C:

Rise Time of STD5NK60Z transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.6

Package: DPAK

Equivalent transistors for STD5NK60Z

STD5NK60Z PDF documents for downloads:

1.1. stp5nk60z_stp5nk60zfp_std5nk60z.pdf Size:488K _st

STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2? - 5A TO-220/FP/DPAK Zener-Protected SuperMESH™ MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ RDS(on) Id PTOT TJmax STP5NK60Z 650 V < 1.6 ? 5 A 90 W STP5NK60ZFP 650 V < 1.6 ? 5 A 25 W STD5NK60Z 650 V < 1.6 ? 5 A 90 W 3 3 ¦ TYPICAL RDS(on) = 1.2 ? 2 2 1 1 ¦ EXTREMELY HIGH dv/dt CAPABILITY TO-220FP TO-220 ¦ 100% AVALANCHE TESTED ¦ GATE CHARGE MINIMIZED ¦ VERY LOW INTRINSIC CAPACITANCES ¦ VERY GOOD MANUFACTURING 3 1 REPEATIBILITY DPAK DESCRIPTION The SuperMESH™ series is obtained through an Figure 2: Internal Schematic Diagram extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh™ products. APPLICATIONS

4.1. stb5nk50z-1_std5nk50z-1_stp5nk50z_stp5nk50zfp.pdf Size:449K _st

STB5NK50Z/-1 - STD5NK50Z/-1 STP5NK50Z - STP5NK50ZFP N-CHANNEL 500V - 1.22? - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH™MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STB5NK50Z 500 V < 1.5 ? 4.4 A 70 W STB5NK50Z-1 500 V < 1.5 ? 4.4 A 70 W STD5NK50Z 500 V < 1.5 ? 4.4 A 70 W STD5NK50Z-1 500 V < 1.5 ? 4.4 A 70 W 3 2 1 3 STP5K50Z 500 V < 1.5 ? 4.4 A 70 W 2 1 STP5K50ZFP 500 V < 1.5 ? 4.4 A 25 W TO-220FP I2PAK TO-220 TYPICAL RDS(on) = 1.22 ? EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED 3 3 3 GATE CHARGE MINIMIZED 2 1 1 1 VERY LOW INTRINSIC CAPACITANCES IPAK DPAK D2PAK VERY GOOD MANUFACTURING REPEATIBILITY Figure 2: Internal Schematic Diagram DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very go

4.2. stp5nk40z_stp5nk40zfp_std5nk40z_std5nk40z-1.pdf Size:602K _st

STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 N-CHANNEL 400V - 1.47? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP5NK40Z 400 V < 1.8 ? 3 A 45 W STP5NK40ZFP 400 V < 1.8 ? 3 A 20 W STD5NK40Z 400 V < 1.8 ? 3 A 45 W STD5NK40Z-1 400 V < 1.8 ? 3 A 45 W 3 TYPICAL RDS(on) = 1.47 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 3 2 1 REPEATIBILITY 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HI

4.3. stb5nk52zd-1_std5nk52zd_stf5nk52zd_stp5nk52zd.pdf Size:776K _st

STD5NK52ZD, STB5NK52ZD-1 STF5NK52ZD,STP5NK52ZD N-channel 520 V,1.22 ?,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH™ Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 2 IPAK 3 STB5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 2 1 2 I PAK 1 STD5NK52ZD-1 520 V < 1.5 ? 4.4 A 70 W 3 STD5NK52ZD 520 V < 1.5 ? 4.4 A 70 W 1 STF5NK52ZD 520 V < 1.5 ? 4.4 A 25 W DPAK STP5NK52ZD 520 V < 1.5 ? 4.4 A 70 W ¦ 100% avalanche tested 3 2 3 TO-220 1 2 ¦ Extremely high dv/dt capability 1 TO-220FP ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeatability Figure 1. Internal schematic diagram ¦ Improved ESD capability D(2) Application ¦ Switching applications G(1) Description The SuperFREDMesh™ series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a fast body-drain recovery diode. Such series complements the “FDmesh™” advanced S(3) AM01476v1 techn

See also transistors datasheet: STD5N20L , STD5N52K3 , STD5N52U , STD5N62K3 , STD5N95K3 , STD5NK40Z , STD5NK50Z , STD5NK52ZD , J111 , STD5NM50 , STD5NM50-1 , STD5NM60 , STD60N3LH5 , STD60N55F3 , STD60NF06 , STD60NF3LL , STD60NF55L .

Keywords