STF18N55M5 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STF18N55M5

Type of STF18N55M5 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25

Maximum drain-source voltage |Uds|, V: 550V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C:

Rise Time of STF18N55M5 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.24

Package: TO220FP

Equivalent transistors for STF18N55M5

STF18N55M5 PDF documents for downloads:

1.1. stb18n55m5_std18n55m5_stf18n55m5_stp18n55m5.pdf Size:1247K _st

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 ?, 13 A, MDmesh™ V Power MOSFET in D?PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D?PAK STD18N55M5 550 V < 0.24 ? 13 A STF18N55M5 STP18N55M5 ¦ DPAK worldwide best RDS(on) 3 3 ¦ Higher VDSS rating 2 2 1 1 ¦ High dv/dt capability TO-220FP TO-220 ¦ Excellent switching performance ¦ Easy to drive ¦ 100% avalanche tested Figure 1. Internal schematic diagram Application D(2) Switching applications Description G(1) The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known S(3) PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- AM01475v1 based Power MOSFETs, making it especially suitable for applications which require superior

4.1. stb18nm80_stf18nm80_stw18nm80_stp18nm80.pdf Size:963K _st

STB18NM80, STF18NM80 STP18NM80, STW18NM80 N-channel 800 V, 0.25 ?, 17 A, MDmesh™ Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 STB18NM80 800 V < 0.295 ? 17 A 1 TO-247 STF18NM80 800 V < 0.295 ? 17 A TO-220 STP18NM80 800 V < 0.295 ? 17 A(1) STW18NM80 800 V < 0.295 ? 17 A 1. Limited only by maximum temperature allowed 3 3 2 1 ¦ 100% avalanche tested 1 TO-220FP D?PAK ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application ¦ Switching applications Description MDmesh™ technology associates the benefits of the multiple drain process applied to STMicroelectronics' well known PowerMESH™ horizontal layout structure. The resulting product has low on-resistance, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes Marking Package Packaging STB18NM80 18NM80 D?PAK Tape and reel STF18NM80 18NM80 TO-

4.2. stb18nm60n_stf18nm60n_sti18nm60n_stp18nm60n_stw18nm60n.pdf Size:995K _st

STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N N-channel 600 V, 0.27 ?, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D?PAK and I?PAK Features VDSS RDS(on) Order codes ID PW (@Tjmax) max. 3 3 1 2 STB18NM60N 110 W 1 D?PAK STF18NM60N 30 W TO-247 3 2 STI18NM60N 650 V < 0.285 ? 13 A 1 STP18NM60N 110 W I?PAK STW18NM60N 3 3 2 ¦ 100% avalanche tested 2 1 1 ¦ Low input capacitance and gate charge TO-220FP TO-220 ¦ Low gate input resistance Application Figure 1. Internal schematic diagram Switching applications D(2) Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new G(1) vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. S(3) AM01475v1 Table 1. Device summary Order codes Marking Package Packaging S

See also transistors datasheet: STF14NM50N , STF15NM60ND , STF15NM65N , STF16N50U , STF16N65M5 , STF16NF25 , STF17N62K3 , STF17NF25 , IRFP260 , STF18NM60N , STF18NM80 , STF19NF20 , STF19NM50N , STF20N95K5 , STF20NF06L , STF20NF20 , STF20NK50Z .

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