STF40NF06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STF40NF06

Type of STF40NF06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 23

Maximum junction temperature (Tj), °C:

Rise Time of STF40NF06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.028

Package: TO220FP

Equivalent transistors for STF40NF06

STF40NF06 PDF documents for downloads:

1.1. stf40nf06.pdf Size:261K _st

STF40NF06 N-channel 60V - 0.024? - 23A - TO-220FP STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STF40NF06 60V <0.028? 23A ¦ Exceptional dv/dt capability ¦ Low gate charge at 100°C 3 2 ¦ Application oriented characterization 1 TO-220FP ¦ 100% avalanche tested Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting Internal schematic diagram transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Switching application Order codes Part number Marking Package Packaging STF40NF06 F40NF06 TO-220FP Tube September 2006 Rev 3 1/12 www.st.com 12 Contents STF40NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics

2.1. stf40nf03l_stp40nf03l.pdf Size:429K _st

STF40NF03L STP40NF03L N-channel 30 V, 0.018 ?, 40 A TO-220, TO-220FP STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STF40NF03L 30 V 0.022 ? 23 A STP40NF03L 30 V 0.022 ? 40 A 3 3 ¦ Low threshold device 2 2 1 1 Application TO-220 TO-220FP ¦ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" Figure 1. Internal schematic diagram strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging STF40NF03L F40NF03L TO-220FP Tube STP40NF03L P40NF03L TO-220 Tube February 2010 Doc ID 6794 Rev 8 1/14 www.st.com 14 Contents STF40NF03L, STP40NF03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

3.1. stb40nf20_stf40nf20_stp40nf20_stw40nf20.pdf Size:484K _st

STP40NF20 - STF40NF20 STB40NF20 - STW40NF20 N-channel 200V - 0.038? -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID PW 3 STB40NF20 200V <0.045? 40A 160W 1 3 2 1 STP40NF20 200V <0.045? 40A 160W D2PAK TO-220 STF40NF20 200V <0.045? 40A 40W STW40NF20 200V <0.045? 40A 160W ¦ Gate charge minimized ¦ Very low intrinsic capacitances 3 2 1 ¦ Very good manufacturing repeatability TO-220FP TO-247 ¦ Excellent figure of merit (RDS*Qg) ¦ 100% avalanche tested Figure 1. Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. Applications ¦ Switching application Table 1. Device summary Order codes Marking Package Packaging STB40NF20 40NF20 D2PAK Tape & reel STP40NF20

See also transistors datasheet: STF32N65M5 , STF34NM60N , STF34NM60ND , STF35N65M5 , STF3LN62K3 , STF3N62K3 , STF3NK100Z , STF3NK80Z , IRF9530 , STF40NF20 , STF42N65M5 , STF4N52K3 , STF4N62K3 , STF5N52K3 , STF5N52U , STF5N62K3 , STF5N95K3 .

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